The optical and electrical performances of hybrid ITO/Ag/ITO (IAI) layer structures have been investigated as a function of the Ag and ITO film thicknesses. The IAI films have been prepared by dc magnetron sputtering at room temperature on borosilicate glass under high vacuum. The thickness of ITO, Ag, ITO films in the hybrid structure were adjusted to have low sheet resistance and high optical transmittance. The deposited metal Ag layer between two ITO layers with thicknesses ranging from 10 to 25 nm has been used. After analyzing IAI multilayer, electroannealing was applied to improve the crystallinity of the obtained IAI films and it was aimed to increase the lifetime of the electronic device by investigating the effect of electrical current on IAI films and it has shown that electro-annealing is a more suitable technique for industrial applications. Optoelectronic performance result of high quality electrode shows that the sheet resistance of IAI films was improved down to 8.7 Ω/□ after the electro-annealing. Furthermore, the highest transmittance of 88.9% was achieved and the optical properties of the hybrid IAI thin films depend on Ag thicknesses that alter the ITO film crystallinity. The structural properties of IAI films have been characterized as a function of annealing temperature by X-ray diffraction (XRD). Information about the morphology of IAI thin film was carried by scanning electron microscope (SEM). Optical properties were measured with spectrophotometer having the wavelength range of 200-2600 nm. For surface resistance measurements, the four point method was applied using Keithley 2424 sourcemeter.