Thin-film antimony selenide (Sb2Se3) solar cells have gained attention as a high-potential photovoltaic technology around the world. Outstanding features like a high absorption coefficient, a suitable direct bandgap, and good hole mobility make Sb2Se3 a promising absorber material for solar cell applications. It has demonstrated a very rapid growth reaching 9.2% power conversion efficiency (PCE) in only 7 years after intensive studies. In the present thesis, first of all Sb2Se3 thin films were deposited on soda lime glasses (SLGs) and investigated using energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometry and Raman spectroscopy. Structural and optical studies were carried out depending on the thickness, used argon (Ar) gas flow rate and post-annealing temperature of the Sb2Se3 films in order to optimize the absorber layer to be used in solar cell. This study revealed that key parameters such as band gap energy and crystal structure of the Sb2Se3 thin films affected by the thickness, Ar gas flow rate during deposition and post-annealing temperature. In addition, oxide phase formation was also found to be related to these growth parameters. Finally,SLG/ITO/Zn(O,S)/Sb2Se3/Ag for superstrate configuration and both SLG/Mo/Sb2Se3/CdS/ITO and SLG/Mo/Sb2Se3/CdS/ZnS/ITO devices fabricated for substrate configuration solar cells. Since Zn(O,S)/Sb2Se3 heterojunction has not been studied before in the literature, this study will be the first. At the end of the electrical analysis, the best conversion efficiency of 3.9% was achieved by the solar cell with the substrate configuration.