Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
by
 
Camino, Fernando E.

Title
: 
Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Author
: 
Camino, Fernando E.

Personal Author
: 
Camino, Fernando E.

Publication Information
: 
Cambridge, MA MyJoVE Corp 2016

Physical Description
: 
online resource (625 seconds)

Series
: 
Engineering

General Note
: 
Title from resource description page

Abstract
: 
We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

Reading Level
: 
For undergraduate, graduate, and professional students

Subject Term
: 
Engineering

Electronic Access
: 
https://www.jove.com/t/58272


LibraryMaterial TypeItem BarcodeShelf NumberStatus
IYTE LibraryOnline Video2250765-1001XX(2250765.1)JoVe Video Online