Frontiers in Electronics.

CONTENTS -- Preface -- Chapter 1. Ultimate CMOS, Novel MOSFETS, and Alternative Transistors -- Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky, M. Yakimov, V. Tokranov, R. Kambhampati, H. Bakhru, S. Koveshnikov, W. Tsai, F. Zhu and J. Lee -- 1. Introduction -- 2. MOSFET vs. HEMT -- 3. Wish List for III-V CMOS -- 4. Interface Passivation Technologies -- 5. Amorphous Si Interface Passivation Layer -- 6. Enhancement- Mode Inversion-Type MOSFET -- 7. Conclusions -- Acknowledgements -- References -- Short Channel, Floating Body, and 3D Coupling E.ects in Triple-Gate MOSFET K.-I. Na, J.-H. Lee S. Cristoloveanu, Y.-H. Bae, P. Patruno and W. Xiong -- 1. Introduction -- 2. Experiment -- 3. Short Channel Effect -- 4. Three Dimensional Coupling Effect -- 5. Gate-Induced Floating Body Effect (GIFBE) -- 6. Conclusions -- Acknowledgments -- References -- Analog and Digital Performance of the Screen-Grid Field E.ect Transistor (SGrFET) K. Fobelets, P. W. Ding, Y. Shadrokh and J. E. Velazquez-Perez -- 1. Introduction -- 2. The simulated device structures -- 3. Analog RF performance of the devices -- 4. Digital performance of the devices -- 5. Conclusions -- Acknowledgments -- References -- Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS E. Torres-Rios, R. Torres-Torres, R. Murphy-Arteaga and E. A. Gutiérrez-D. -- 1. Introduction -- 2. Description of fabricated test structures -- 3. General models for RF shielded test structures -- 3.1 General model for the shielded test structure with pad probe design at the second metal level -- 3.2 General model for the shielded test structure with pad probe design at the third metal level -- 4. Equivalent circuit modeling -- 4.1 Calculation of the model parameters -- 4.2 Analytical parameter extraction -- 5. Results and discussion -- 6. Conclusions.

7. Acknowledgments -- References -- Germanium on Sapphire H. S. Gamble, P. T. Baine, H. Wadsworth, Y. H. Low, P. V. Rainey, F. H. Ruddell, B. M. Armstrong, D. W. McNeill and S. J. N. Mitchell -- 1. Introduction -- 2. Semiconductor properties and applications -- 3. Sapphire properties and applications -- 4. Germanium on Sapphire -- 5. Passives and Parasitics -- 6. Optical Detection -- 7. Germanium ICs -- 8. Summary and Conclusions -- References -- Single Event Effects in the Nano Era M. L. Alles, L. W. Massengill, R. D. Schrimpf, R. A. Weller and K. F. Galloway -- 1. Introduction -- 2. Single Event Effects -- 3. Differential Scaling -- 4. Mitigation -- 5. Analysis -- 6. Opportunities -- 7. Conclusions -- Acknowledgments -- References -- An Efficient Numerical Method of DC Modeling for Power MOSFET, MESFET and AlGaN/GaN HEMT T. Rahman, M. A. Huque and S. K. Islam -- 1. Introduction -- 2. Mathematical Theory -- 3. Model Development and Verification Using Analytical Data -- 3.1. MOSFET -- 3.2. MESFET -- 4. Model Development and Verification Using Experimental Data -- 5. Conclusion -- Reference -- Nanocomponents: A Designer's Point of View H. Fanet -- 1. Introduction -- 2. Why use new components ? -- 2.1. Generalities -- 2.2. Long term and middle term limits of conventional components -- 3. Benchmarking new components -- 4. Evolution of architectures -- 5. Demultiplexing solutions -- 6. Fault tolerance problems -- 7. Conclusions -- References -- Chapter 2. Nano Materials, Structures and Devices -- Silicon Spintronics I. Appelbaum -- 1. Introduction -- 2. Techniques for Spin Injection and Detection in Silicon -- 3. Spin Transport Measurements -- 3.1. Spin-Valve -- 3.2. Spin Precession -- 4. Spin Lifetime Measurement -- Acknowledgments -- References -- Nano Characterization of Materials D. K. Schroder -- 1. Introduction.

2. Transmission Electron Microscopy -- 3. Electron Holography -- 4. Magnetic Exchange Force Microscopy -- 5. Atom Probe Field Ion Microscopy -- 6. X-Ray Tomography -- 7. Helium Ion Microscopy -- 8. Conclusion -- 9. Acknowledgments -- 10. References -- Biomolecular Sensing Using Carbon Nanotubes: A Simulation Study G. B. Abadir, K. Walus, R. F. B. Turner and D. L. Pulfrey -- 1. Introduction -- 2. Simulation Flow and Results -- 2.1 Molecular Dynamics simulations -- 2.2 DFT/NEGF simulations -- 3. Conclusions -- References -- Large Area Nanoscale Patterning by Interferometric Lithography - Nanophotonics and Nano.uidics S. R. J. Brueck -- 1. Introduction -- 2. Interferometric Lithography -- 3. Nanophotonics -- 3.1. Metamaterials and Negative Index Materials -- 3.2. Plasmonics -- 4. Nanofluidics -- 5. Conclusions -- References -- The Deposition and Control of Self Assembled Silicon Nano Islands on Crystalline Silicon R. Kiebach, Z. Yu, M. Aceves-Mijares, D. Bian and J. Du -- 1. Introduction -- 2. Experimental Section -- 3. Results and Discussion -- 3.1. Influence of the silicon content -- 3.2. Influence of the Nitrogen Incorporation -- 3.3. Multi-Layer Approach -- 3.4. Influence of substrate surface roughness -- 4. Conclusion -- 5. Acknowledgments -- 6. References -- Chapter 3. Ultra High Speed Devices and Concepts -- AlGaN/GaN HEMTs: Recent Developments and Future Directions S. Rajan, U. K. Mishra and T. Palacios -- 1. Introduction -- 2. Advanced Ga-Polar AlGaN/GaN HEMTs -- 2.1 Field-plated GaN HEMTs -- 2.2 Deep-recessed GaN HEMTs -- 3. N-polar AlGaN/GaN HEMTs -- 3.1 Dispersion Control in N-polar AlGaN/GaN -- 4. Gallium Nitride Transistors for Highly Scaled Digital Electronics -- 5. Conclusions -- References -- Fluctuations and Ultrafast Processes in Voltage-Biased Two-Dimensional Channels A. Matulionis -- 1. Introduction.

2. 2DEG channels and radiometric setup -- 3. Real-space transfer noise -- 4. Hot-electron energy relaxation -- 5. Equivalent hot-phonon temperature -- 6. Hot-phonon lifetime -- 7. Summary -- Acknowledgments -- References -- Non-Ideal Current Transport in Heterostructure Field E.ect Transistors A. Koudymov and M. Shur -- 1. Introduction -- 2. Velocity saturation in the gate-drain spacing -- 3. Space charge and field distributions in velocity saturation region -- 4. Effect of carrier trapping -- 5. Advanced device designs -- 6. Conclusion -- 7. Acknowledgement -- References -- THz Detection by Field-E.ect Transistors in Magnetic Fields: Shallow Water vs Deep Water Mechanism of Electron Plasma Instability M. Sakowicz, J. Lusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Köhler, G. Valu.sis, K. Go laszewska, E. Kamińska and A. Piotrowska -- I. INTRODUCTION -- II. EXPERIMENTAL AND RESULTS -- III. DISCUSSION -- A. Detection by coupled gated - ungated plasma: the gate length effect -- B. Antenna effects -- IV. CONCLUSIONS -- Acknowledgments -- References -- Cyclotron Resonance Vanishing E.ect and THz Detection A. Chebotarev and G. Chebotareva -- 1. Introduction -- 2. Experimental study of 2DES GaAs/AlGaAs structures in low magnetic field -- 2.1. Photoresistance magnetospectra under THz radiation -- 2.2. "CR-vanishing effect" (CRV) in 2DES GaAs/AlGaAs -- 3. Discussion of the experimental data and theoretical approaches -- 3.1. Relationship of Hall resistance & magnetospectrum of photoresistance -- 3.2. Vanishing of Cyclotron Resonance (CRV) -- 3.3. Physical models of "correlated" states of 2D electrons in nanostructures -- 3.3.1. Magneto-plasma waves -- 3.3.2. Comparison with models for Quantum Hall effect -- 3.3.3. Comparison with non-linear zero-resistance states -- 3.3.4. Other physics is considering -- 4. Future THz detectors -- 5. References.

Chapter 4. Optoelectronics and Advanced Lasers, Detectors and Imagers -- Impregnated Semiconductor Scintillator S. Luryi -- 1. Introduction -- 2. Random Non-Planar Inclusions -- 3. Efficient Capture of Minority Carriers -- 4. Possible Material Systems -- 5. What Do We Need From the Crystal Grower? -- 6. Conclusion -- Acknowledgments -- References -- Terahertz Quantum Cascade Lasers and Real-Time T-Rays Imaging at Video Rate Q. Hu -- 1. Introduction -- 2. THz gain medium based on resonant LO-phonon scattering for depopulation -- 3. THz mode confinement using double-side metal waveguides -- 4. Real-time THz imaging using QCLs and focal-plane array cameras -- 5. Acknowledgments -- References -- Proposal of Novel Structure Light Emitting Devices Consisting of InN/GaN MQWs with Ultrathin InN Wells in GaN Matrix A. Yoshikawa and S.-B. Che -- 1. Introduction -- 2. Features of novel structure InN/GaN MQWs consisting of 1 ML-thick InN wells in GaN matrix -- 3. Experimental -- 4. Fabrication and characterization of InN/GaN MQWs at higher temperatures by rf-MBE -- 5. Extension of novel InN/GaN MQWs fabrication to MOVPE growth -- 6. Ultimately reduced QCSE in experimental LEDs with novel structure InN/GaN MQWs grown by MOVPE -- 7. Summary -- Acknowledgements -- References -- Recent Developments in Broadband Terahertz Spectroscopy N. Karpowicz, J. Dai, X.-C. Zhang, L. Zhang and C. Zhang -- 1. Introduction -- 2. Terahertz Generation In Gases -- 3. Terahertz Detection In Gases -- 4. Experimental Results -- 5. Conclusion -- 6. Acknowledgements -- References -- Hot-Electron Transport in Quantum-Dot Photodetectors L. H. Chien, A. Sergeev, N. Vagidov and V. Mitin -- 1. Introduction -- 2. Electron kinetics and detector performance -- 3. Photoelectron capture: Quasi-equilibrium distribution -- 4. Carrier capture in an electric field -- Acknowledgements -- References.

Scalable Single Photon Detector for Terahertz and Infrared Applications D. H. Wu, B. R. Matis and K. Bussman.