Advances in Silicon Carbide Processing and Applications -- Contents vii -- Preface xi -- Acknowledgments xiii -- Chapter 1 Silicon Carbide Overview 1 -- 1.1 General Properties 1 -- 1.2 History 4 -- 1.3 Crystalline Structure 8 -- 1.4 Crystal Growth 11 -- 1.5 Epitaxial Growth 18 -- 1.6 Defects 21 -- 1.7 Commercial Outlook 22 -- 1.8 Summary 25 -- References 26 -- Chapter 2 High-Temperature SiC-FET Chemical Gas Sensors 29 -- 2.1 Introduction 29 -- 2.2 Detection Mechanism of Field-Effect Gas Sensors 30 -- 2.3 Field-Effect Chemical Gas Sensor Devices 38 -- 2.4 Sensor Properties at Elevated Temperatures, Influence of Hydrogen 49 -- 2.5 More Sensor Properties 53 -- 2.6 Experimental 57 -- 2.7 Applications 59 -- 2.8 Outlook and Conclusions 62 -- Acknowledgments 63 -- References 63 -- Chapter 3 Silicon Carbide Technology and Power Electronics Applications 69 -- 3.1 DC-DC Conversion 69 -- 3.2 DC-AC Power Conversion 80 -- 3.3 Pulsed-Power Applications 91 -- 3.4 Thermal Management and High-Voltage Packaging 97 -- 3.5 Summary 106 -- References 106 -- Chapter 4 Advances in Selective Doping of SiC Via Ion Implantation 109 -- 4.1 Introduction 109 -- 4.2 As-Implanted Profiles 114 -- 4.3 Implant Annealing 128 -- 4.4 Technology Barriers and Suggestions for Future Work 147 -- References 148 -- Chapter 5 Power SiC MOSFETS 155 -- 5.1 Introduction 155 -- 5.2 SiC UMOSFET 156 -- 5.3 SiC DIMOSFET 163 -- 5.4 SiC LDMOS 169 -- 5.5 Summary and Future Development 171 -- References 172 -- Chapter 6 Power and RF BJTs in 4H-SiC: Device Design and Technology 177 -- 6.1 Introduction 177 -- 6.2 Device Structures and Operation of Power BJTs 177 -- 6.3 Design of the Epitaxial Power BJT 181 -- 6.4 Process Integration 186 -- 6.5 1.2-kV Power BJTs 188 -- 6.6 Design and Fabrication of UHF Transistors 192 -- 6.7 Future Work 199 -- References 200 -- About the Editors 203 -- Index 205.