Contents -- Preface -- Chapter 1 Introductory Chapter -- 1.1 Elementary act of impact ionization -- 1.2 Auger recombination -- 1.3 Energy of electrons and holes as a function of electric field -- 1.4 Main approaches for describing ionization phenomena -- 1.4.1 Approximation of the characteristic breakdown field F -- -- 1.4.2 Monte- Carlo simulation -- 1.4.3 Approximation of ionization rates -- Chapter 2 Avalanche Multiplication -- 2.1 Fundamentals of avalanche multiplication -- 2.2 Avalanche photodiodes -- 2.2.1 Spectral sensitivity -- 2.2.2 Dark current -- 2.2.3 Quantum eficiency -- 2.2.4 Time response -- 2.2.5 Multiplication factor -- 2.2.6 Avalanche excess noise -- Chapter 3 Static Avalanche Breakdown -- 3.1 Introduction -- 3.2 General form of the static "breakdown" current-voltage characteristic -- 3.2.1 Microplasma breakdown -- 3.2.2 Homogeneous ( ccmature77) breakdown -- 3.2.2.1 Contact resistivity -- 3.2.2.2 Thermal resistance -- 3.2.2.3 Space-charge resistance -- 3.2.3 Negative diferential resistance -- 3.2.3.1 Qualitative consideration -- 3.2.3.2 The zero doping ( p - i - n) structure -- 3.2.3.3 Computer simulation -- 3.2.4 Second part of the current-voltage characteristic, with posi- tive diflerential resistance at very high current densities -- 3.3 Avalanche suppressor diodes -- 3.3.1 Principle of operation -- 3.3.2 Main parameters -- 3.4 IMPATT diodes -- 3.4.1 Principle of operation -- 3.4.2 Some physical problems that arise at very high frequencies -- Chapter 4 Avalanche Injection -- 4.1 Introduction -- 4.2 Avalanche injection in n + - n - n+ ( p + - p - p + ) structures -- 4.3 Avalanche injection in bipolar transistors -- 4.3.1 Introduction -- 4.3.2 Avalanche transistor: conventional regime of operation -- 4.3.2.1 Difference in breakdown voltages of a BJT between the common- base and common-emitter configurations.

4.3.2.2 Dependence of the bipolar transistor gain coefficient QO o n current density -- 4.3.2.3 Main features of ABT operation in a conventional regime -- 4.4 Operation regime of a Si avalanche transistor at very high cur- rent densities -- 4.4.1 Introduction -- 4.4.2 Steady-state collector field distribution. Residual collector voltage -- 4.4.3 Transient properties of Si avalanche transistor at extreme current densities -- 4.5 Operation regime of GaAs avalanche transistor at very high current densities -- 4.5.1 Experimental results -- 4.5.2 Breakdown in moving Gunn domain in GaAs: qualitative analysis -- 4.5.3 Computer simulations of superfast switching in GaAs avalanche transistor -- Chapter 5 Dynamic Breakdown -- 5.1 Introduction -- 5.2 Impact ionization front (TRAPATT zone) -- 5.3 Silicon Avalanche Sharpers (SAS) -- 5.3.1 Computer simulations and comparison with experimental results -- 5.3.2 Stability of the plane ionization front -- 5.3.2.1 Short-wavelength instability of the plane ionization front -- 5.3.2.2 Long-wave length instability of the plane ionization front -- 5.3.3 The problem of the initial carriers -- 5.4 GaAs diodes with delayed breakdown -- 5.5 Superfast switching of GaAs thyristors -- 5.6 Main features of streamer breakdown -- 5.6.1 Introduction -- 5.6.2 Analytical theory of a streamer discharge -- 5.6.3 Computer simulation -- Conclusion -- List of Symbols -- Bibliography -- Index -- AUTHOR INDEX.