Contents -- Preface -- 1 Ion-S timulated Processes -- 1.1 Interaction of Light Ions with Single-Crystalline Semiconductors -- 1.1.1 Elastic collisions -- 1.1.2 Inelastic collisions -- 1.1.3 Radiation defect formation in semiconductors under the influence of accelerated ions -- 1.2 Proton Enhanced Diffusion -- 1.2.1 Dopant redistribution in semiconductors under high temperature proton irradiation -- 1.2.1.1 Detecting of the proton-enhanced diffusion -- 1.2.1.2 Theoretical presentations about the influence of the proton irradiation on the impurity diffusion in semiconductors -- 1.2.1.3 Vacancy model of the enhanced impurity diffusion -- 1.2.1.4 Two flux model of proton-enhanced diffusion -- 1.2.1.5 Proton-enhanced diffusion of ionized impurities -- 1.2.1.6 Applied aspects of proton enhanced diffusion -- 1.2.1.7 Proton enhanced diffusion in the quantum-scale heterostructures -- 1.2.1.8 Near-surface proton enhanced diffusion -- 1.2.1.9 Long-distance effects by proton enhanced diffusion -- 1.2.2 Impurity diffusion into a preliminarily irradiated semiconductor crystal -- 1.3 Processes of Ion Beam Mixing -- 1.3.1 Theoretical concepts of the physics of radiation enhanced processes at the metal-semiconductor interface -- 1.3.2 Ion implantation-stimulated processes of the formation of chemical compounds -- 1.3.3 Quantum well and quantum dot proton irradiation-induced intermixing -- 2 Transmutation Doping of Semiconductors by Charged Particles -- 2.1 Nuclear Reactions Involving Charged Particles -- 2.2 Simulation of Transmutation Doping by Charged Particles -- 2.3 Experimental Investigation of Transmutation Doping by Charged Particles -- 2.3.1 Silicon -- 2.3.2 Semiconductor compounds A III Bv -- 2.3.3 Other materials -- 2.4 Potential of the Method of Transmutation Doping with Charged Particles in the Technology of Semiconductor Devices.

3 Doping of Semiconductors Using Radiation Defects -- 3.1 Doping of Gallium Arsenide and Other III-V Semiconductors -- 3.1.1 Production of radiation defects in gallium arsenide -- 3.1.2 Radiation defect formation in indium phosphide -- 3.1.3 Effect of proton irradiation on the electrical properties of III-V compounds -- 3.1.4 Prospects of using proton irradiation for the development of semiconductor devices based on III-V compounds -- 3.2 Doping of Silicon with Radiation Defects -- 3.2.1 Radiation defects in silicon irradiated with protons and alpha particles -- 3.2.2 Energy levels of radiation defects in silicon irradiated with protons and alpha particles -- 3.2.3 Production rates and concentration profiles of radiation defects in silicon irradiated with protons and alpha particles -- 3.2.4 Implementation of radiation with protons and alpha particles in the technology of Si-based devices -- 3.3 Doping of Narrow Bandgap Semiconductors with Radiation Defects -- 3.4 Doping of Wide Bandgap Semiconductors with Radiation Defects -- 3.4.1 Radiation-induced defects in GaN and related compounds -- 3.4.2 Doping of Sic with radiation defects -- 4 Formation of Buried Porous and Damaged Layers -- 4.1 Formation of Buried Nanoscale Porous Layers in Semiconductors -- 4.2 Use of the Porous Layers in the Technology of Semiconductor Devices -- 4.2.1 "Smart Cut" technology -- 4.2.2. Gettering of impurities by porous layers -- References -- References chapter 1 -- References chapter 2 -- References chapter 3 -- References chapter 4 -- Index.