Sic Materials And Devices.
Title:
Sic Materials And Devices.
Author:
Shur, Michael.
ISBN:
9789812706850
Personal Author:
Physical Description:
1 online resource (143 pages)
Series:
Selected Topics in Electronics & Systems, v. 43 ; v.v. 43
Selected Topics in Electronics & Systems, v. 43
Contents:
CONTENTS -- Preface -- Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr. -- 1. Introduction -- 2. Sic Bulk Growth -- 2.1. The Physical Vapor Transport Process -- 2.2. Sublimation Epitaxy -- 2.3. Liquid Phase Epitaxy -- 2.4. High Temperature Chemical Vapor Deposition -- 3. Crystal Orientation -- 4. Crystal Diameter Enlargement -- 5. Substrate Defects -- 5.1. Polytype stability -- 5.2. Micropipes -- 5.3. Low Angle Grain Boundaries -- 5.4. Dislocations -- 6. Doping in SIC -- 7. Sic Substrates for Microwave Devices -- 7.1. Shallow Electronic Levels -- 7.2. Deep electronic levels -- 7.3. Current status of HPSI material -- 8. Wafering and Polish -- 8.1. Boule Slicing -- 8.2. Polish -- 9. Substrate Cost -- 10. Conclusions -- Acknowledgments -- References -- Deep Level Defects in Silicon Carbide A. A. Lebedev -- 1. Introduction -- 2. Parameters of Deep Centers in Sic -- 2.1. Major dopant impurities in Sic -- 2.1.1. Nitrogen -- 2.1.2. Aluminum -- 2.1.3. Boron -- 2.1.4. Gallium -- 2.1.5. Indium -- 2.2. Other types of impurity centers in S i c -- 2.2.1. Beryllium -- 2.2.2. Magnesium -- 2.2.3. Scandium -- 2.2.4. Titanium -- 2.2.5. Vanadium -- 2.2.6. Tantalum -- 2.2.7. Chromium -- 2.2.8. Molybdenum -- 2.2.9. Manganese -- 2.2.10. Zinc -- 2.2.11. Cadmium -- 2.2.12. Phosphorus -- 2.2.13. Oxygen -- 2.2.14. Erbium -- 2.3. Intrinsic defects in silicon carbide -- 2.3.1. Centers in the lower halfof the bandgap -- L-center -- i-center -- D-center -- Other defects -- 2.3.2. Defects in the upper half of the band gap -- 6H-Sic -- Zl/ZZ -- 4H-Sic -- 3C-Sic -- 2.4. Radiation doping of Sic -- 2.4.1. Electrons -- 2.4.2. Neutrons -- 2.4.3. Alpha-particles -- 2.4.4. Protons -- 2.4.5. "Defect" luminescence -- 2.4.6. In summary -- 3. Influence of Impurities on the Growth of Epitaxial Sic Layers.
3.1. Heteropolytype Sic epitaxy -- 3.2. Site-competition epitaxy of Sic -- 4. Deep Centers and Recombination Processes in Sic -- 4.1. Deep centers and radiative recombination in 6H- and 4H-SiCp-n structures. -- 4.2. Influence of deep centers on the dqfusion length and lifetime in 6H-SiCp-n structures -- 4.3. Deep centers and the negative temperature coefJicient for the breakdown voltage in Sic p-n-structures -- 5. Conclusion -- Acknowledgements -- References -- Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs -- 1. Introduction -- 1.1 Historical review -- 1.2 Some important basics of Sic-JFE T semiconductor physics -- 1.2.1 Electron mobility in hexagonal Sic -- 1.2.2 Incomplete ionization of dopants in 4H-Sic -- 1.2.3 Consequence -- 1.2.4 Built-in voltage -- 1.3. Normally-on or normally-off? -- 2. Lateral SiC-JFETs -- 3. The Vertical JFET (VJFET) -- 3.1 The purely vertical JFET -- 3.1.1 Purely verticalpower Junction Field-Effect Transistors -state of the art A.D. 2005 -- 3.2 The vertical JFET with lateral channel -- 3.2. Current limiters -- 3.3. Power switches based on Sic VJFETs -- 3.3.1. The cascode approach -- 3.3.2. Single die VJFET -- 3.3.3. Applications for Sic VJFETs -- 3.3.4. High temperature operation -- References -- Sic BJTs T. P. Chow and A. K. Agarwal -- 1. Introduction -- 2, Figures of Merit -- 3. Power Bipolar Transistors -- 3.1 Bipolar junction transistor (BJT) -- 3.2 Darlington transistor -- 4. Commercialization Challenges -- References.
Abstract:
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices. Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Local Note:
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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