Cover image for Solar Cell Device Physics.
Solar Cell Device Physics.
Title:
Solar Cell Device Physics.
Author:
Fonash, Stephen.
ISBN:
9780080912271
Personal Author:
Edition:
2nd ed.
Physical Description:
1 online resource (382 pages)
Contents:
Front Cover -- Solar Cell Device Physics -- Copyright Page -- Contents -- Preface -- Acknowledgments -- List of Symbols -- List of Abbreviations -- Chapter 1 Introduction -- 1.1 Photovoltaic Energy Conversion -- 1.2 Solar Cells and Solar Energy Conversion -- 1.3 Solar Cell Applications -- References -- Chapter 2 Material Properties and Device Physics Basic to Photovoltaics -- 2.1 Introduction -- 2.2 Material Properties -- 2.2.1 Structure of solids -- 2.2.2 Phonon spectra of solids -- 2.2.3 Electron energy levels in solids -- 2.2.4 Optical phenomena in solids -- 2.2.5 Carrier recombination and trapping -- 2.2.6 Photocarrier generation -- 2.3 Transport -- 2.3.1 Transport processes in bulk solids -- 2.3.2 Transport processes at interfaces -- 2.3.3 Continuity concept -- 2.3.4 Electrostatics -- 2.4 The Mathematical System -- 2.5 Origins of Photovoltaic Action -- References -- Chapter 3 Structures, Materials, and Scale -- 3.1 Introduction -- 3.2 Basic Structures for Photovoltaic Action -- 3.2.1 General comments on band diagrams -- 3.2.2 Photovoltaic action arising from built-in electrostatic fields -- 3.2.3 Photovoltaic action arising from diffusion -- 3.2.4 Photovoltaic action arising from effective fields -- 3.2.5 Summary of practical structures -- 3.3 Key Materials -- 3.3.1 Absorber materials -- 3.3.2 Contact materials -- 3.4 Length Scale Effects for Materials and Structures -- 3.4.1 The role of scale in absorption and collection -- 3.4.2 Using the nano-scale to capture lost energy -- 3.4.3 The role of scale in light management -- References -- Chapter 4 Homojunction Solar Cells -- 4.1 Introduction -- 4.2 Overview of Homojunction Solar Cell Device Physics -- 4.2.1 Transport -- 4.2.2 The homojunction barrier region -- 4.3 Analysis of Homojunction Device Physics: Numerical Approach -- 4.3.1 Basic p-n homojunction -- 4.3.2 Addition of a front HT-EBL.

4.3.3 Addition of a front HT-EBL and back ET-HBL -- 4.3.4 Addition of a front high-low junction -- 4.3.5 A p-i-n cell with a front HT-EBL and back ET-HBL -- 4.3.6 A p-i-n cell using a poor μτ absorber -- 4.4 Analysis of Homojunction Device Physics: Analytical Approach -- 4.4.1 Basic p-n homojunction -- 4.5 Some Homojunction Configurations -- References -- Chapter 5 Semiconductor-semiconductor Heterojunction Cells -- 5.1 Introduction -- 5.2 Overview of Heterojunction Solar Cell Device Physics -- 5.2.1 Transport -- 5.2.2 The heterojunction barrier region -- 5.3 Analysis of Heterojunction Device Physics: Numerical Approach -- 5.3.1 Absorption by free electron-hole pair excitations -- 5.3.2 Absorption by exciton generation -- 5.4 Analysis of Heterojunction Device Physics: Analytical Approach -- 5.4.1 Absorption by free electron-hole excitations -- 5.4.2 Absorption by excitons -- 5.5 Some Heterojunction Configurations -- References -- Chapter 6 Surface-barrier Solar Cells -- 6.1 Introduction -- 6.2 Overview of Surface-barrier Solar Cell Device Physics -- 6.2.1 Transport -- 6.2.2 The surface-barrier region -- 6.3 Analysis of Surface-barrier Device Physics: Numerical Approach -- 6.4 Analysis of Surface-barrier Device Physics: Analytical Approach -- 6.5 Some Surface-barrier Configurations -- References -- Chapter 7 Dye-sensitized Solar Cells -- 7.1 Introduction -- 7.2 Overview of Dye-sensitized Solar Cell Device Physics -- 7.2.1 Transport -- 7.2.2 The dye-sensitized solar cell barrier region -- 7.3 Analysis of DSSC Device Physics: Numerical Approach -- 7.4 Some DSSC Configurations -- References -- Appendix A: The Absorption Coefficient -- Appendix B: Radiative Recombination -- Appendix C: Shockley-Read-Hall (Gap-state-assisted) Recombination -- Appendix D: Conduction- and Valence-band Transport.

Appendix E: The Quasi-neutral-region Assumption and Lifetime Semiconductors -- Appendix F: Determining p(x) and n(x) for the Space-charge-neutral Regions of a Homojunction -- Appendix G: Determining n(x) for the Space-charge-neutral Region of a Heterojunction p-type Bottom Material -- Index -- A -- B -- C -- D -- E -- F -- G -- H -- I -- J -- K -- L -- M -- N -- O -- P -- Q -- R -- S -- T -- U -- V -- W.
Abstract:
There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become ubiquitous in the world's power markets unless it can become economically competitive with legacy generation methods such as fossil fuels. The new edition of Dr. Stephen Fonash's definitive text points the way toward greater efficiency and cheaper production by adding coverage of cutting-edge topics in plasmonics, multi-exiton generation processes, nanostructures and nanomaterials such as quantum dots. The book's new structure improves readability by shifting many detailed equations to appendices, and balances the first edition's semiconductor coverage with an emphasis on thin-films. Further, it now demonstrates physical principles with simulations in the well-known AMPS computer code developed by the author. *Classic text now updated with new advances in nanomaterials and thin films that point the way to cheaper, more efficient solar energy production *Many of the detailed equations from the first edition have been shifted to appendices in order to improve readability *Important theoretical points are now accompanied by concrete demonstrations via included simulations created with the well-known AMPS computer code.
Local Note:
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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