Contents -- Preface -- Acknowledgments -- 1 Introduction -- 1.1 Basic Considerations -- 1.2 Some Specific Examples -- 1.2.1 Reliability of advanced GaN transistors -- 1.2.2 Radiation damage in light-emitting diodes -- References -- 2 Semiconductor Fundamentals -- 2.1 Fundamental Concepts -- 2.1.1 Bandgap -- 2.1.2 Direct and indirect semiconductors -- 2.1.3 Carrier densities -- 2.1.3.1 Intrinsic carrier density -- 2.1.3.2 Doping -- 2.1.3.3 Extrinisic and intrinsic conduction -- 2.1.4 Carrier recombination -- 2.1.5 Background potential -- 2.1.6 Carrier transport -- 2.2 p-n Junctions -- 2.2.1 Homojunctions -- 2.2.2 Heterojunctions -- 2.2.2.1 Band offset -- 2.2.2.2 Tailoring the bandgap: bandgap engineering -- 2.2.2.3 Schottky barriers -- 2.3 Fabrication and Material -- 2.3.1 GaAs -- 2.3.2 InP -- 2.3.3 SiC -- 2.3.4 GaN -- 2.4 Power Applications -- 2.5 Summary -- References -- 3 Transistor Technologies -- 3.1 Junction Field-Effect Transistors -- 3.1.1 Basic characteristics -- 3.1.2 MESFETs -- 3.2 Modulation-Doped Field-Effect Transistors -- 3.3 MOS Transistors -- 3.3.1 Fundamental concepts -- 3.4 Bipolar Transistors -- 3.4.1 Fundamental concepts -- 3.4.2 Modern silicon and silicon-germanium transistors -- 3.4.3 Other materials -- 3.5 Noise -- 3.6 Summary -- References -- 4 Optoelectronics -- 4.1 Critical Semiconductor Properties for Light Emission -- 4.1.1 Recombination and band structure -- 4.1.2 Recombination processes -- 4.1.3 Quantum efficiency -- 4.2 Material Considerations -- 4.2.1 Solid solutions -- 4.2.1.1 Ternary systems using AlGaAs (GaAs) -- 4.2.1.2 Quaternary systems using InGaAsP (InP) -- 4.2.1.3 Other materials -- 4.2.2 Strained lattices -- 4.3 Light-Emitting Diodes -- 4.3.1 Basic considerations -- 4.3.2 Amphoterically doped LEDs -- 4.3.3 Heterojunction light-emitting diodes -- 4.4 Laser Diodes -- 4.4.1 Basic laser properties.

4.4.2 In-plane semiconductor lasers -- 4.4.3 Vertical cavity semiconductor lasers (VCSELs) -- 4.4.4 Spectral width -- 4.4.4.1 Light-emitting diodes -- 4.4.4.2 In-plane lasers with Fabry-Perot reflectors -- 4.4.4.3 Laser with distributed feedback reflectors -- 4.4.5 Tunable lasers -- 4.5 Detectors -- 4.5.1 Light absorption -- 4.5.2 Basic p-n junction photodetector -- 4.5.3 Avalanche photodiodes -- 4.6 Summary -- References -- 5 Reliability Fundamentals -- 5.1 Reliability Requirements -- 5.1.1 Definitions -- 5.1.2 Properties of probability distributions -- 5.1.2.1 Exponential distribution -- 5.1.2.2 Normal and log-normal distributions -- 5.1.2.3 Weibull distribution -- 5.1.3 Statistical plotting methods -- 5.1.4 Reliability metrics: FIT rate -- 5.2 Acceleration Mechanisms -- 5.2.1 Temperature: activation energy -- 5.2.2 Infant mortality and burn-in -- 5.2.3 Other acceleration factors -- 5.2.3.1 Electric field -- 5.2.3.2 Current density -- 5.2.3.3 Non-constant failure rate -- 5.3 Basic Failure Mechanisms -- 5.3.1 Traps at surfaces -- 5.3.2 Dislocations -- 5.3.3 Contact degradation -- 5.3.4 Electromigration -- 5.4 Analysis of Reliability Test Data -- 5.4.1 Screening and infant mortality -- 5.4.2 Activation energies -- 5.4.3 Sample tests -- 5.5 Summary -- References -- 6 Compound Semiconductor Reliability -- 6.1 MESFETs and HFETs: Mature Technologies -- 6.1.1 Overview -- 6.1.2 Gate sinking -- 6.1.3 Contact degradation -- 6.1.4 Hydrogen poisoning -- 6.1.5 Fluorine dopant passivation -- 6.1.6 Hot-carrier degradation -- 6.1.7 Passivation layer traps -- 6.1.8 Gate-lag effect -- 6.1.9 RF tests of high-power devices for MMIC applications -- 6.2 GaAs Heterojunction Bipolar Transistors -- 6.2.1 Basic considerations -- 6.2.2 Degradation in carbon-doped HBTs -- 6.2.3 Sudden DC gain degradation -- 6.3 SiGe Heterojunction Bipolar Transistors.

6.4 Wide Bandgap Semiconductors: SiC and GaN -- 6.4.1 Silicon carbide -- 6.4.2 Gallium nitride -- 6.5 Summary -- References -- 7 Optoelectronic Device Reliability -- 7.1 Basic Considerations -- 7.1.1 Material properties -- 7.1.1.1 AlGaAs and GaAs -- 7.1.1.2 InGaAsP and InGaAs -- 7.1.1.3 AlGaInP -- 7.1.1.4 GaAsP -- 7.1.1.5 AlGaInN -- 7.1.1.6 InGaN -- 7.1.2 Operating conditions and failure definitions -- 7.1.2.1 Light-emitting diodes -- 7.1.2.2 Laser diodes -- 7.2 Reliability of Light-Emitting Diodes -- 7.2.1 General characteristics -- 7.2.2 Mechanisms -- 7.3 Laser Diode Reliability -- 7.3.1 General characteristics -- 7.3.2 Dark-Line Defects -- 7.3.3 Catastrophic optical damage -- 7.3.4 Facet damage -- 7.3.5 Electrode damage -- 7.3.6 Reliability evaluation -- 7.4 VCSELs -- 7.5 Tunable and Frequency Stabilized Lasers -- 7.5.1 Tunable lasers -- 7.5.2 Frequency-stabilized lasers -- 7.6 Optical Detectors -- 7.6.1 Conventional detectors -- 7.6.2 Avalanche photodetectors -- 7.7 Summary -- References -- 8 Radiation Environments -- 8.1 Particle Types -- 8.1.1 Particles producing permanent damage -- 8.1.2 Particles producing transient effects -- 8.1.2.1 Galactic cosmic rays -- 8.1.2.2 Solar flares -- 8.1.2.3 Terrestrial radiation -- 8.2 Radiation Environments Near the Earth -- 8.3 Energy Distributions in the Earth's Trapped Belts -- 8.4 Radiation Environment in a Geosynchronous Orbit -- 8.5 Protons from Solar Flares -- 8.5.1 Solar activity -- 8.5.2 Specifying proton flare environments -- 8.6 Galactic Cosmic Rays -- 8.7 Heavy Particles in Solar Flares -- 8.8 Terrestrial Environments -- 8.8.1 Alpha particles -- 8.8.2 Atmospheric neutrons -- 8.8.3 Nuclear reactors -- 8.9 Summary -- References -- 9 Interactions of Radiation with Semiconductors -- 9.1 Fundamental Interactions -- 9.1.1 Ionization effects -- 9.1.1.1 Basic considerations.

9.1.1.2 Effects in insulators -- 9.1.2 Particle scattering -- 9.1.3 Displacement damage -- 9.1.3.1 Electron displacement damage -- 9.1.3.2 Displacement damage from protons and heavy ions -- 9.2 Effects of Damage on Semiconductor Properties -- 9.2.1 Lifetime damage -- 9.2.2 Carrier removal -- 9.2.3 Mobility -- 9.3 Radiation Effects in Heterostructures -- 9.4 Energy Dependence of Displacement Damage -- 9.4.1 Displacement energy comparisons -- 9.4.2 Discrepancies between NIEL and experiments -- 9.4.3 Annealing -- 9.5 Summary -- References -- 10 Displacement Damage in Compound Semiconductors -- 10.1 JFETs -- 10.2 HFETs -- 10.3 Advanced Bipolar Transistors -- 10.4 Wide-Bandgap Devices -- 10.4.1 Silicon carbide -- 10.4.1.1 SiC MOSFETs -- 10.4.1.2 Schottky barrier diodes -- 10.4.2 Gallium nitride -- 10.5 Summary -- References -- 11 Displacement Damage in Optoelectronic Devices -- 11.1 Light-Emitting Diodes with Amphoteric Doping -- 11.1.1 Properties affected by radiation damage -- 11.1.2 Damage linearity -- 11.1.3 Annealing -- 11.2 Heterojunction LEDs -- 11.3 Edge-Emitting Laser Diodes -- 11.3.1 Fundamental effects -- 11.3.2 Monitor diode and operational margins -- 11.4 VCSELs -- 11.5 Photodetectors -- 11.5.1 Conventional photodetectors -- 11.5.2 Avalanche photodiodes -- 11.6 Summary -- References -- 12 Radiation Damage in Optocouplers -- 12.1 Introduction -- 12.2 Damage in Basic Phototransistor Optocouplers -- 12.2.1 Basic response -- 12.2.2 Phototransistor effects -- 12.2.3 Effect of different particle types -- 12.2.4 Temperature effects -- 12.2.5 Production lot variability -- 12.3 Optocouplers with High-Speed Internal Amplifiers -- 12.3.1 Operational characteristics -- 12.4 Optocouplers with MOSFET Output Stages -- 12.5 Summary -- References -- 13 Effects from Single Particles -- 13.1 Basic Concepts -- 13.1.1 Charge deposition.

13.1.2 Charge density produced by particles in space -- 13.1.3 Charge collection -- 13.1.4 Critical charge -- 13.2 Single-Event Upset in Logic Devices -- 13.3 Optocouplers -- 13.3.1 Basic design and sensitivity -- 13.3.2 Transients from high-energy particles -- 13.3.2.1 Heavy ions -- 13.3.2.2 Protons -- 13.4 Optical Receivers -- 13.4.1 Basic issues -- 13.4.2 Optical receiver radiation tests -- 13.5 Single-Event Upset Effects from Neutrons -- 13.6 Permanent Damage from Particle-Induced Transients -- 13.7 Summary -- References -- Index.