Contents -- Preface -- Introduction -- Chapter 1. Defects in Semiconductors -- 1.1 M.F. Li and C.T. Sah, A new method for the determination of dopant and trap concentration profiles in semiconductors. IEEE Trans. ED. , Vol. 29, pp.306-315 (1982) . -- I. INTRODUCTION -- II. BASIC PRINCIPLES -- III. EXPERIMENTAL RESULTS AND DISCUSSIONS -- ACKNOWLEDGMENT -- REFERENCES -- 1.2 M.F. Li and C.T. Sah, New techniques of capacitance-voltage measurements of semiconductor junctions, Solid State Electronics, Vo1.25, pp.95-99 (1982) -- 1. A CAPACITANCE AMPLlnER FEEDBACK LOOP FOR CONSTANT-CAPACITANCE VOLTAGE TRANSIENT (CeV!) MEASUREMENT -- 2. QUASI-STAllC C-V MEASUREMENT VSlNG A CAPACITANCE INTEGRATOR -- REI'EIlENCES -- 1.3 M.F. Li, D.Q. Mao and S.Y. Ren, Global predictions of T2 symmetric deep level wavefunctions in semiconductors. Solid State Commun. Vo1.48, pp.789- 793 (1983). -- REFERENCES -- 1.4 M.F. Li, J.X. Chen, Y.S. Yao and G. Bai, Au acceptor levels in Si under pressure. J. Appl. Phys. Vo1.58 , pp.2599- 2602 (1985). -- I. INTRODUCTION -- II. HYDROSTATIC PRESSURE EXPERIMENT -- III. EXPERIMENTAL RESULTS -- IV. DISCUSSION -- ACKNOWLEDGMENTS -- APPENDIX A -- 1.5 M.F. Li, D.Q. Mao and S.Y. Ren, Binding energies of electrons by nitrogen pairs in GaP. Phys. Rev. B, Vo1.32, pp.6907-6909 (1985). -- 1.6 M.F. Li and P.y' Yu, A new proposed method for determining inner or outer crossing lattice relaxation of DX centers in AlxGal _xAs based on pressure effects. Solid State Comm., Vo1.61 , pp.13-15 (1987). -- References -- 1.7 M.F. Li, P.Y. Yu, E.R. Weber and W. Hansen, Lattice relaxation of pressure-induced deep centers in GaAs:Si. Appl. Phys. Lett., Vo1.51, pp.349-351 (1987). -- 1.8 M.F. Li, P.Y. Yu, E.R. Weber and W. Hansen, Photocapacitance study of pressure-induced deep donors in GaAs:Si. Phys. Rev. B, Vol. 36, pp.4531-4534 (1987).

1.9 G.G. Qin and M.F. Li, Some selected topics in high pressure semiconductor research in China. (Invited presentation on International Conference on High Pressure in Semiconductors, Warsaw, Poland, 1988), published in Semiconductor Science and Technol -- Acknowledgment -- References -- 1.10 M.F. Li, Y.B. Jia, P.Y. Yu, J. Zhou and J.L. Gao, Negative U property of the DX center in AlxGal-xAs:Si. Phys. Rev. B, Vo1.40, pp.1430-1433 (1989). -- 1.11 M.F. Li, P.Y. Yu and E.R. Weber, Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys. Appl. Phys. Lett. Vo1.59, pp.1197-1199 (1991). -- 1.12 M.F. Li, and P.Y. Yu, Probing the DX center in GaAs and related alloys by capacitance transient measurements under stress. (invited presentation on 5th Int. Conf. on High Pressure in Semiconductor Physics (HPSP), Kyoto, Japan, 1992), published in -- 1 Introduction: -- II.Establishment of the DX center as due to substitutional donor : -- III. Models of the DX center tested by stress measurements: -- References -- 1.13 M.F. Li, Y.Y. Luo, P.Y. Yu, E.R. Weber, H. Fujioka, A.Y. Du, S.J. Chua and Y.T. Lim, Two electron state and negative U property of sulfur DX centers in GaAs1-xPx. Phys. Rev. B, Vo1.50, pp.7996-7999 (1994). -- 1.14 A.Y. Du, M.F. Li, T.C. Chong and S.J. Chua, Observation of carrier concentration saturation effect in n-type AlxGal-xAs. Appl. Phys. Lett., Vol. 66, pp.1391-1393 (1995). -- 1.15 M.F. Li and P.Y. Yu, High pressure study of DX centers using capacitance techniques (invited review paper) , in High Pressure in Semiconductor Physics I. eds. T. Suski and W. Paul, Semiconductors and Semimetals, Vol. 54, pp.457- 484 Academic Press, 1998. -- I. Introduction -- II. Techniques for Electrical Measurements on Samples Inside the DAC -- 1. INTRODUCING WIRES INTO THE DAC.

2. PERFORMING CAPACITANCE MEASUREMENTS INSIDE THEDAC -- Ill. Introduction to Capacitance Transient Techniques -- 1. CAPACITANCE TRANSIENTS AT CONSTANT TEMPERATURE -- 2. CAPACITANCE TRANSIENT WHEN SCANNING TEMPERATURE - DEEP-LEVEL TRANSIENT SPECTROSCOPY -- 3. PHOTOCAPACITANCE TRANSIENT MEASUREMENTS -- IV. Experimental Studies of DX Centers -- 1. INTRODUCTION -- 2. ESTABLISHMENT OF THE DX CENTER AS DUE TO SUBSTITUTIONAL DONORS -- 3. MODELS OF THE DX CENTER -- V. Concluding Remarks -- Acknowledgments -- REFERENCES -- Chapter 2. Semiconductor Band Structures -- 2.1 M.F. Li, M.P. Surh and S.G. Louie, Spin-orbit interaction effects in Zincblende semiconductors: ab initio pseudopotential calculations. Proc. 19th Int. Conf. on The Physics of Semiconductors, ed. W. Zawadzki, pp.857-860 (1988), Warsaw, Poland. -- 2.2 Z.G. Gu, M.F. Li, J.Q. Wang and B.S. Wang, Deformation potentials at the top of valence bands in semiconductors: Ab Initio pseudopotential calculations. Phys. Rev. B, Vo1.41 , pp.8333- 8339 (1990). -- I. INTRODUCfION -- II. ODP AND ADP AT THE TOP OF THE VALENCE BANDS -- III. AB INITIO PSEUDOPOTENTIAL CALCULATIONS AND SPIN·ORBIT SPLITTING -- IV. ADP AND ODP RESULTS AND DISCUSSION -- ACKNOWLEDGMENTS -- 2.3 M.F. Li, X.S. Zhao, Z.G. Gu, J.X. Chen, Y.J. Li and J.Q. Wang, Shear-deformation- potential constant of the conduction-band minima of Si: Experimental determination by the deep-level capacitance transient method. Phys. Rev. B, Vol. 43 , PP. 14040- 14046 (1991). -- I. INTRODUCTION -- II. PRINCIPLE OF THE METHODRECOMB INA TION KINETICS OF DEEP LEVELS UNDER UNIAXIAL STRESS -- III. EXPERIMENTAL DETAILS AND MEASUREMENTS -- IV. EXPERIMENTAL RESULTS -- V. DISCUSSION -- VI. CONCLUDING DISCUSSIONS -- ACKNOWLEDGMENTS.

2.4 J.Q. Wang, Z.Q. Gu, B.S. Wang and M.F. Li, First-principles calculations for quasiparticle energies of GaP and GaAs. Phys. Rev. B, Vo1.44, pp.8707- 8712, (1991). -- I. INTRODUCTION -- II. GREEN-FUNCTION METHOD AND THE GPP MODEL -- III. Ab Initio QUASIPARTICLE ENERGY CALCULATIONS -- IV. RESULTS AND DISCUSSIONS -- ACKNOWLEDGMENTS -- 2.5 W.J. Fan, M.F. Li, T.C. Chong and J.B. Xia, Electronic properties of zinc-blende GaN, AIN and their alloys Gal-xAlxN. J. Appl. Phys., Vo1.79, pp.188-194 (1996). -- I. INTRODUCTION -- II. BAND STRUCTURES OF ZINC-BLENDE GaN AND AIN -- III. DEFORMATION POTENTIAL CONSTANTS OF ZINC-BLENDE GaN AND AIN -- IV. CONCLUSION -- ACKNOWLEDGMENTS -- 2.6 W.J. Fan, M.F. Li, T .C. Chong and J.B. Xia, Valence hole subbands and optical gain spectra of GaN/Gal_xAlxN strained quantum wells. J. Appl. Phys., Vol. 80, pp.3471- 3478 (1996). -- I. INTRODUCTION -- II. CALCULATION METHOD AND VALENCE HOLE SUBBANDS -- III. OPTICAL TRANSITION MATRIX ELEMENTS -- IV. CARRIER DENSITY -- V. OPTICAL GAIN AND RADIATIVE CURRENT DENSITY -- VI. CONCLUSION -- ACKNOWLEDGMENTS -- 2.7 Y.C. Yeo, T.C. Chong and M.F. Li, Electronic band structures and effective-mass parameters of wurtzite GaN and InN. J. Appl. Phys. Vol. 83 , pp.1429- 1436 (1998). -- I. INTRODUCTION -- II. ELECTRONIC BAND STRUCTURE -- Ill. DERIVATION OF EFFECTIVE MASS PARAMETERS -- IV. CONCLUSION -- ACKNOWLEDGMENTS -- 2.8 Y.C. Yeo, T.C. Chong, M.F. Li and W.J. Fan, Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AIGaN quantum well lasers. 1. Appl. Phys. Vo1.84, pp.1813-1819 (1998) -- I. INTRODUCTION -- II. THEORY -- III. RESULTS AND DISCUSSION -- IV. CONCLUSION -- ACKNOWLEDGMENTS -- Chapter 3. Analog Integrated Circuit Design.

3.1 M.F. Li, X. Chen and Y.C. Lim, Linearity improvement of CMOS trans conductors for low supply applications. Electronics Letters, Vol. 29, pp.ll06-1107 (1993). -- References -- 3.2 X.W. Zhang, M.F. Li and U. Dasgupta, Low voltage linear OTA with rail-to-rail differential mode input signal capability. The 6th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS'99), Cyprus, Sept, 1999. pp.603-606. -- Abstract -- 1. Introduction -- 2. Principle of Operation -- 3. Experimental Result -- 4. Conclusion -- 5. References -- 3.3 Y.J. Ha, M.F. Li and A.Q. Liu, A new CMOS buffer amplifier design used in low voltage MEMS interface circuits. presented at the 6th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS'99), Cyprus, 1999. pp.1313-1316, Published in Analog Integrated Circuits and Signal Processing, Vo1.27, pp.7-17 (2001). -- Introduction -- Circuit Description -- Simulation and Chip Measurement Results -- Conclusion -- Acknowledgment -- References -- 3.4 M.F. Li, U. Dasgupta, X.W. Zhang and Y.C. Lim, A low-voltage CMOS OTA with rail-to-rail differential input range. IEEE Trans. Circuits and Systems - I, Vol.47, pp.1-8 (2000). -- I. INTRODUCTION -- II. SINGLE ENDED INPUT RAIL-TO-RAIL OTA ARCHITECTURE -- III. DIFFERENTIAL INPUT RAIL-TO-RAIL OTA ARCHITECTURE -- IV. SIMULATION RESULTS AND DISCUSSION -- V. CONCLUSION -- REFERENCES -- 3.5 A.M. Xu and M.F. Li, A 1.2 V Rail-to-rail differential mode input linear CMOS transconductor. Proceedings of the 2002 IEEE ISCAS, May, 2002, Phoenix, Arizona, Vol 1, pp.337-340. -- Abstract -- 1. Introduction -- 2. Method and circuit implementation -- 3. Simulation Results -- Acknowledgement -- References.

3.6 Luo Zhenying, M.F. Li, Yong Lian and S.C. Rustagi, A new low voltage CMOS transconductor for VHF filtering applications. presented at IEEE ISCAS, May, 2003, Bangkok, Thailand. Published in Analog Integrated Circuits and Signal Processing, Vol. 37, pp.233-342 (2003).