CONTENTS -- PREFACE -- PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS -- 19. III-V MIXED CRYSTALS -- 19.1 INTRODUCTION -- 19.2 PHYSICAL PROPERTIES -- 19.3 CRYSTAL GROWTH -- 19.3.1 In1-x GaxP -- 19.3.2 ln1-x GaxAs -- 19.3.3 In1-x GaxSb -- 19.3.4 InP l-xAsx -- 19.3.5 GaAs1-xP x -- 19.3.6 A1Ga1-x,Asx -- 19.3. 7 InSb1-xBix -- 19.3.8 Quaternary III-V Mixed Crystals -- 19.4 APPLICATIONS -- REFERENCES -- 20. NITRIDE AND OTHER III-V COMPOUNDS -- 20.1 INTRODUCTION -- 20.2 PHYSICAL PROPERTIES -- 20.3 CRYSTAL GROWTH -- 20.3.1 Boron Nitride -- 20.3.2 Aluminum Nitride -- (1) Melt growth -- (2) Solution growth -- (3) Vapor phase growth -- -Physical Vapor Transport (PVT) method -- - Other vapor phase growth methods -- (4) Metal Organic Chemical Vapor Deposition (MOCVD) -- (5) Hydride Vapor Phase Epitaxy (HVPE) -- (6) Other growth methods -- 20.3.3 Gallium Nitride -- (1) Melt growth -- (2) Solution growth -- - High Pressure Solution Growth (HP-SG) -- -Pressure-Controlled Solution Growth (PC-SG) method -- - Flux method -- - Ammonothermal method -- - Other solution growth methods -- (3) Vapor phase growth -- - Physical Vapor Transport (PVT) method -- - Reaction of Ga with NH3 -- - Reaction of Ga with activated nitrogen -- (4) Hydride Vapor Phase Epitaxy (HVPE) -- -Sapphire -- - NdGa03 (NGO) -- - GaAs -- -SiC -- - Si -- - GaN -- -Oxides -- (5) Others -- 20.3.4 Indium Nitride (InN) -- 20.3.5 Other III-V Compounds -- 20.4 CHARACTERIZATION -- 20.4.1 Purity -- (1) BN -- (2) AIN -- (3) GaN -- 20.4.2 Defects -- (1) Dislocations -- -BN -- -AIN -- - GaN -- (2) Structural defects -- -BN -- -AIN -- - GaN -- (3) Point defects -- -BN -- -AIN -- - GaN -- (i) Vacancies -- (ii) Divacancies -- (iii) Interstitials -- (iv) Antisite defects -- (v) Complex defects -- (4) Deep levels -- -AIN -- - GaN -- (i) n-type GaN -- (ii) p-type -- (iii) Semi-insulating (SI) -- (iv) Fe and Cr doping.

20.4.3 Electrical Properties -- (l)BN -- (2) AIN -- (3) GaN -- (4) InN -- 20.4.4 Optical Properties -- (1) BN -- (2) AIN -- (3) GaN -- 20.5 APPLICATIONS -- 20.5.1 Substrates for Devices -- (1) BN -- (2) AlN -- (3) GaN -- 20.5.2 Light Emitting Diodes (LEDs) -- (1) Red LEDs -- (2) Green LEDs -- (3) Blue and violet LEDs -- (4) White LEDs -- (5) Violet and ultraviolet (UV) LEDs -- 20.5.2 Lasers -- (1) Blue and violet LDs -- (2) Ultraviolet (UV) LDs -- (3) Green LDs -- 20.5.3 Detectors -- 20.5.4 Electronic devices -- 20.5.5 Field emitters -- REFERENCES -- 21. ZnO -- 21.1 INTRODUCTION -- 21.2 PHYSICAL PROPERTIES -- 21.3 CRYSTAL GROWTH -- 21.3.1 Melt Growth -- 21.3.2 Solution Growth -- (1) Flux method -- (2) Hydrothermal method -- 21.3.3 Vapor Phase Growth -- (I) Vapor reaction -- (2) Chemical Vapor Transport (CVT) -- (3) Chemical Vapor Deposition (CVD) -- 21.4 CHARACTERIZATION -- 21.4.1 Purity -- 21.4.2 Defects -- (1) Dislocations -- (2) Structural defects -- (3) Nonstoichiometry -- (4) Native defects -- 21.4.3 Electrical Properties -- 21.4.4 Optical Properties -- (1) Edge emission -- (2) Impurities -- (3) Native defects -- (4) Polishing -- (5) Polar surfaces -- 21.5 APPLICATIONS -- 21.5.1 Substrates -- 21.5.2 Scintillators -- 21.5.3 Light Emitting Diodes (LEDs) -- 21.5.4 Laser Diodes (LDs) -- 21.5.5 Photodiodes -- REFERENCES -- 22. MERCURY COMPOUNDS -- 22.1 INTRODUCTION -- 22.2 PHYSICAL PROPERTIES -- 22.2.1 Mercury Cadmium Telluride (MCT -- Hg1-xCdxTe) -- 22.2.2 Hgl2 -- 22.3 CRYSTAL GROWTH -- 22.3.1 Mercury Cadmium Telluride (MCT -- Hg1-xcdxTe) -- (1) Bridgman growth -- -Conventional and modified methods -- -Accelerated Crucible Rotation Technique (ACRT) -- (2) Zone Melting (ZM) and Zone Leveling (ZL) -- (3) Solution growth -- - Travelling Heater Method (THM) -- (4) Solid State Recrystallization (SSR) -- (5) Crystal growth of other materials.

22.3.2 Mercuric Iodide (Hgl2) -- (1) Starting material preparation -- (2) Melt growth -- (3) Solution growth -- (4) Physical Vapor Transport (PVT) -- - Static evaporation -- - Pulling method -- - Temperature Oscillation Method (TOM) -- -Forced Flux Method (FFM) -- - Space growth -- - Vaporization -- - Reduction of growth rate -- -Mercury halides -- (5) Chemical Vapor Transport (CVT) -- 22.4 CHARACTERIZATION -- 22.4.1 Purity -- (1) Hg1-xCdxTe (MCT) -- (2) HgI2 -- 22.4.2 Defects -- (1) Dislocations -- - Hg1-xCdxTe (MCT) -- -HgI2 -- (2) Structural defects -- - Hg1-xCdxTe (MCT) -- -HgI2 -- (3) Nonstoichiometry -- - Hg1-xCdxTe (MCT) -- - HgI2 -- (4) Native defects -- - Hg1-xCdxTe (MCT) -- -HgI1 -- 22.4.3 Electrical Properties -- (1) Hg1-xCdxTe (MCT) -- - Conductivity mechanism -- -Impurities -- -Annealing -- - Minority carrier lifetime -- (2) HgI2 -- 22.4.4 Optical Properties -- (1) Hg1-xCdxTe (MCT) -- (2) HgI2 -- 22.5 APPLICATIONS -- 22.5.1 Far Infrared Detectors -- 22.5.2 Radiation Detectors Using Hgl2 -- REFERENCES -- 23. SiC -- 23.1 INTRODUCTION -- 23.2 PHYSICAL PROPERTIES -- 23.3 CRYSTAL GROWTH -- 23.3.1 Crystal Growth Methods -- (1) Acheson method -- (2) Solution growth method -- (3) Sublimation method (Lely method) -- (4) Sublimation method (modified Lely method) -- - Growth of 6H- and 4H-SiC single crystals -- - Growth on various orientations -- -Improvement of growth conditions -- - Purity control -- -Enlargement of crystal diameter -- - Growth of 3C-SiC single crystals -- - Modelling and simulation -- (5) Other Methods -- - Chemical Vapor Deposition (CVD) -- -High Temperature CVD (HT-CVD) -- -Closed Space Vapor Transport (CSVT) -- Thermal Decomposition (Barikov Process) -- -Smart Cut -- 23.3.2 Control of Polytypes -- 23.3.3 Reduction of the Defect Densities -- (1) Micropipes (MPs) -- -Reduction by the modified Lely method.

Closing by epitaxial growth -- (2) Dislocations -- (3) Stacking faults (SFs) -- (4) Other defects -- 23.3.4 n-Type, p-Type and Semi-Insulating (SI) SiC Crystals -- (1) n-Type crystals -- - Phosphorus doping -- (2) p-Type crystals -- (3) Semi-Insulating (SI) crystals -- - V doping -- - Undoped semi-insulating -- 23.4 CHARACTERIZATION -- 24.4.1 Purity -- 23.4.2 Defects -- (1) Macrodefects and structural defects -- (2) Micropipes (MPs) -- (3) Dislocations -- (4) Stacking Faults (SFs) -- (5) Inclusions -- (6) Subgrain boundaries (low angle grain boundaries) -- (7) Other Dejects -- (8) Point defects -- (9) Deep levels -- - V-doped Semi-Insulating (SI) -- - Undoped Semi-Insulating (Sf) -- 23.4.3 Electrical Properties -- (1) Transport properties -- (2) p, n control -- (3) Semi-Insulating (Sl) properties -- 23.4.4 Optical Properties -- (1) Raman Spectrum -- (2) Photoluminescence (PL) -- - Exciton emission -- - Donor-Acceptor (DA) pair emission -- - Defect emission -- - Deep level emission -- - PL mapping -- 23.4.5 Effect of defects on device performance -- (1) Micropipes (MPs) -- (2) Dislocations -- (3) Stacking faults (SFs) -- 23.5 APPLICATIONS -- 23.5.1 Substrates for GaN Based Light Emitting Diodes (LEDs), Lasers Diodes (LDs) and Electronic Devices -- 23.5.2 Optical Devices and Sensors -- (I) Blue and other color LEDs -- (2) Ultraviolet (UV) photodetectors -- (3) Sensors -- (4) Radiation detectors -- 23.5.3 Electronic Devices -- (1) Diodes -- - Schottky Barrier Diodes (SBDs) -- -pn diodes -- (2) Power transistors -- -Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) -- -Junction FETs (JFETs)/Static Induction Transistors (SITs) -- -Bipolar transistors -- (3) High frequency devices -- REFERENCES -- 24. LEAD COMPOUNDS -- 24.1 INTRODUCTION -- 24.2 PHYSICAL PROPERTIES -- 24.3 CRYSTAL GROWTH -- 24.3.1 Melt Growth.

(1) Liquid Encapsulated Czochralski (LEC) method -- (2) Bridgman method and other melt growth methods -- 24.3.2 Solution Growth -- 24.3.3 Vapor Phase Growth -- (1) Physical Vapor Transport (PVT) method -- (2) Vapor-Liquid-Solid (VLS) /Vapor-Melt-Solid (VMS) method -- (3) Chemical Vapor Transport (CVT) method -- 20.3.4 Recrystallization -- 24.4 CHARACTERIZATION -- 24.4.1 Purity -- 24.4.1 Defects -- (1) Dislocations -- (2) Small angle grain boundaries (SAGBs) -- (3) Striations -- (4) Precipitation and inclusions -- (5) Stoichiometry -- (6) Native defects -- 24.4.2 Electrical Properties -- 24.4.3 Optical Properties -- 24.5 APPLICATIONS -- 24.5.1 IR Laser Diodes (IR-LDs) -- 24.5.2 Far Infrared Photodetectors -- 24.5.3 Thermoelectric Generators -- REFERENCES -- 25. CHALCOPYRITE COMPOUNDS -- 25.1 INTRODUCTION -- 25.2 PHYSICAL PROPERTIES -- 25.3 CRYSTAL GROWTH -- 25.3.1 Melt Growth -- (1) Gradient freezing, directional freezing and zone melting methods -- (2) Bridgman method -- (3) Liquid Encapsulated Czochralski (LEC) method -- 25.3.2 Solution Growth ( -- (1) Solution growth method -- (2) Traveling Heater Method (THM) -- 25.3.3 Vapor Phase Growth -- 25.3.4 Solid State Reaction (SSR) -- 25.3.5 Others -- 25.4 CHARACTERIZATION -- 25.4.1 Defects -- 25.4.2 Electrical Properties -- 25.4.3 Optical Properties -- 25.5 APPLICATIONS -- 25.5.1 Solar Cells -- 25.5.2 Short Wavelength Emitting Devices -- 25.5.3 Nonlinear Optical Devices -- 25.5.4 Narrow Range Optical Filters -- REFERENCES -- APPENDIX: RAW MATERIALS -- l. INTRODUCTION -- 2. PURIFICATION PROCESS -- 2.1 Electrolysis2 -- 2.2 Solvent Extraction3-5 -- 2.3 Ion Exchange6,7 -- 2.4 Vacuum Distillation8,9 -- 2.5 Zone Melting10,11 -- 3. ZINC -- 4. CADMIUM -- 5. MERCURY -- 6. GALLIUM -- 7. INDIUM -- 8. PHOSPHORUS -- 9. ARSENIC -- 10. ANTIMONY -- 11. BISMUTH -- 12. SELENIUM -- 13. TELLURIUM -- 14. BORIC OXIDE.

15. PYROL YTIC BORON NITRIDE (pBN).