CONTENTS -- Foreword -- Oxide Wearout, Breakdown, and Reliability -- 1. Introduction -- 2. Oxide Breakdown -- 3. Oxide Leakage Currents -- 4. Oxide Trap Generation -- 5. Statistics of Wearout and Breakdown -- 6. Reliability -- 7. Summary -- Reliability of Flash Nonvolatile Memories -- 1. Introduction -- 2. Implications to Scaling and Reliability -- 3. Dielectric Damage Caused by Program/Erase Cycling -- 4. Overerase Effects -- 5. Stress Induced Leakage Current and Post-Cycling Data Retention -- 6 Other Failure Mechanisms -- 7. Conclusions -- Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics -- 1. Introduction -- 2. Time-Dependent Dielectric Breakdown -- 3. Chemistry and Physics of Amorphous SiO2 -- 4. Molecular Models for Dielectric Degradation -- 5. Electron and Hole Injection into SiO2 -- 6. Role of Hole Capture in TDDB -- 7. Complementary Model for TDDB -- 8. Conditions Under Which the E and 1/E Models are Valid -- 9. Extention of the Complementary Model to Hyper-Thin SiO2 -- 10. Summary -- Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides -- 1. Introduction -- 2. Breakdown related to the generation of oxide defects -- 3. Modeling the Breakdown Statistics -- 4. Breakdown modes: Soft breakdown and Hard Breakdown -- 5. Breakdown effectiveness, energy dissipation and device failure -- 6. Conclusions -- MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications -- 1. Introduction -- 2. Development of the Anode Hole Injection Model -- 3. Recent Developments -- 4. Gross-Defect Related Breakdown and Burn-in Model -- 5. Voltage-Driven Breakdown -- 6. BERT Circuit Reliability Simulation -- 7. Conclusion.