III-Nitride Semiconductor Materials.
Title:
III-Nitride Semiconductor Materials.
Author:
Feng, Zhe Chuan.
ISBN:
9781860949036
Personal Author:
Physical Description:
1 online resource (440 pages)
Contents:
CONTENTS -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1.Introduction -- 2.Experiment -- 3.Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4.New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5.Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.1.1. Template substrates -- 5.1.2. Free-standing substrates -- 5.1.3. Bulk substrates -- 5.2. Device Applications -- 6.Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides -- 2. Types of Planar Reactors -- 3. Reactor Modeling -- 3.1. Growth Kinetics of Group-III Nitride MOVPE -- 3.2. Modeling of MOVPE processes -- 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology -- 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies -- 4. In-situ Technology in Nitride MOCVD Systems -- 5. The Mass Production of GaN and Related Materials -- 5.1. Optoelectronic Device Structures -- 5.2. Growth in the 8x4 inch Configuration -- 5.3. Special Aspects of Growth on 4 inch -- 5.4. The Growth of InGaN Structures -- 5.5. The Growth of AlGaN Structures -- 5.6. High Growth Rates in Mass Production Reactors -- Chapter 3 Close-Coupled Showerhead MOCVD technology for the epitaxy of GaN and related materials -- 1. Introduction -- 2. Reactor Development -- 2.1. Close-Coupled Showerhead Technology -- 2.2. Modeling -- 2.3. Scale-up of CCS Reactors.
3. In-situ Optical Monitoring -- 3.1. Optical Pyrometry -- 3.2. Laser Interferometry (Reflectometry) -- 3.3. Emissivity Corrected Pyrometry -- 3.4. Spectral Reflectometry -- 4. Reagent Concentration Monitoring -- 5. Growth Results -- 5.1. GaN Template Growth in Close-Coupled Showerhead Reactors -- 5.2. Quantum Wells in Close-Coupled Showerhead Reactors -- 5.3. HEMT Structures in Close-Coupled Showerhead Reactors -- 6. Mass Production of GaN Based Devices -- 6.1. Cost of Ownership Dependence on System Size -- 6.2. Process Cycles -- 6.3. Growth Data from 19x2" Production System -- 7. Acknowledgements -- Chapter 4 Molecular beam epitaxy for III-N materials -- 1. Introduction -- 2. MBE technology -- 2.1. Ammonia vs Plasma Assisted MBE -- 3.Semi-insulating GaN -- 3.1.Growth of semi-insulating GaN -- 3.2.Carbon doping -- 3.3.Other dopants for semi-insulating GaN -- 4.Electrical Characteristics -- 4.1.Polarization Induced Two Dimensional Electron Gas -- 4.2.Reproducibility and Uniformity -- 4.3.Low Temperature Mobility -- 4.4.Magnetotransport Properties -- 5.AlGaN/GaN HFET Device Characteristics -- 5.1.DC and Small-Signal RF Characteristics -- 5.1.1. Devices Grown on Sapphire and SiC by Ammonia MBE -- 5.1.2. Devices Grown on Resistive Silicon by Ammonia MBE -- 5.1.3. Devices Grown on Sapphire and SiC by PAMBE -- 5.2.Large-Signal RF Performance -- 5.3.Device Scalability and Large Periphery Performance -- 6.Conclusion -- Chapter 5 Growth and properties of nonpolar GaN films and heterostructures -- 1.Introduction -- 2.Substrate: y-LiAlO2 -- 2.1. Properties of the substrate -- 2.2. Polarity of the substrate -- 2.3. In-plane orientation relationship -- 3.Optimization of Heteroepitaxy of GaN Films Ony-LiAIO2(100) -- 3.1. Impact of nucleation conditions on phase purity.
3.2. Influence of nucleation temperature on surface quality -- 4.Ga Adsorption and Desorption Kinetics -- 4.1. Surface reconstruction -- 4.2. Ga adsorption/desorption kinetics -- 5.M-plane (In Ga)N/GaN Multiple Quantum Wells -- 5.1. In incorporation and surface segregation -- 5.2. Recombination mechanism -- 6.Conclusion and Outlook -- Chapter 6 Indium-nitride growth by high-pressure CVD: real-time and ex-situ characterization -- 1. Introduction -- 2. HPCVD Reactor Characteristics -- 3. Reactor flow characterization -- 4. Precursor characterization: Ammonia and Trimethlyindium -- 4.1. Optical characterization of Trimethylindium TMI [In(CH3)3] -- 4.2. Optical characterization of ammonia (NH3) -- 5. Flow kinetics: Analysis utilizing pulsed gas injection -- 5.1. Flow characterization during pulsed precursor injection -- 6. Precursor decomposition dynamics at higher pressures -- 7. Growth of InN: Real-time optical monitoring -- 8. Ex-situ characterization of InN layers -- 9. Summary and Outlook -- Chapter 7 A new look on InN -- 1. Introduction -- 2. Growth and Structures -- 3. Compositions and Electrical Properties -- 4. Optical Characterizations -- 5. Four Possibilities -- 6. Conclusions and Outlook -- Chapter 8 Growth and electrical/optical properties of AlxGa1-xN in the full composition range -- 1. Introduction -- 2. Material Growth of AlGaN -- 2.1. Growth Techniques and Full Range Control of Al -- 2.2. Conduction type control of AlGaN -- 2.3. Dislocation and Morphology Analysis -- 2.4. Chemical Ordering in AlGaN -- 3. Electrical Properties -- 3.1. Electrical Transport -- 3.2. Deep Level Defects -- 4. Optical Properties -- 5. Band Gap Bowing of AlGaN -- 6. Summary -- Chapter 9 Optical investigation of InGaN/GaN quantum well structures grown by MOCVD -- 1. Introduction -- 2. Strain-relaxation in InGaN/GaN MQW.
3. Quantum-confined Stark effect and exciton-localization Effect -- 4. Optical Investigation of InGaN/GaN MQWS under high excitation -- 5. Study of stimulated emission from InGaN/GaN multiple quantum well structures -- 6. Femtosecond studies of electron capture times in InGaN/GaN MQWs -- 7. Summary -- Chapter 10 Clustering nanostructures and optical characteristics in InGaN/GaN quantum-well structures with silicon doping -- 1. Introduction -- 2. Sample Preparation and Measurement Conditions -- 3. Photoluminescence and Photoluminescence Excitation -- 3.1. Amplified Spontaneous Emission -- 3.2. Cathodoluminescence -- 3.3. Strain State Analysis -- 4. Discussions -- 5. Conclusions -- Chapter 11 III-nitrides micro- and nano-structures -- 1. Introduction and Overview -- 2. Nanostructures by Epitaxy -- 3. Nanostructures by Selective Etching and Regrowth -- 3.1. Photoelectrochemical Etching -- 3.2. Polarity Selective Chemical Etching (PSCE) -- 3.3. ID and 2D Periodic Structures Formed by PSCE -- 4. Applications of GaN Micro- and Nanostructures -- 4.1. Second Harmonic Generation -- 4.2. Electron Field Emission -- 5. Summary and Future Outlook -- Chapter 12 New developments in dilute nitride semiconductor research -- 1. Introduction -- 2. Material Properties -- 3. Device Applications -- 3.1. Long-wavelength Laser Diodes for Telecommunications -- 3.2. Solar Cells for Photovoltaic Solar Power Conversion -- 4. Origin of Band-gap Reduction in Dilute Nitrides -- 4.1. Large Band-gap Bowing and Early Impurity Models -- 4.2. Band Anticrossing -- 4.3. E_ and E+ transitions -- 4.4. Enhancement in Maximum Free Electron Concentration -- 5. Concluding Remarks: From Dilute III-N-V Nitrides to Dilute II-O-VI Oxides.
Abstract:
III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical
Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Local Note:
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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