Contents -- Preface -- Chapter 1 Introduction -- 1.1 Ideal and Typical Power Device Characteristics -- 1.2 Unipolar Power Devices -- 1.3 Bipolar Power Devices -- 1.4 MOS-Bipolar Power Devices -- 1.5 Ideal Drift Region for Unipolar Power Devices -- 1.6 Summary -- References -- Chapter 2 Material Properties and Technology -- 2.1 Fundamental Properties -- 2.1.1 Energy Band Gap -- 2.1.2 Impact Ionization Coefficients -- 2.1.3 Electron Mobility -- 2.2 Other Properties Relevant to Power Devices -- 2.2.1 Donor and Acceptor Ionization Energy Levels -- 2.2.2 Recombination Lifetimes -- 2.2.3 Metal-Semiconductor Contacts -- 2.3 Fabrication Technology -- 2.3.1 Diffusion Coefficients and Solubility of Dopants -- 2.3.2 Ion Implantation and Annealing -- 2.3.3 Gate Oxide Formation -- 2.3.4 Reactive Ion Etching of Trenches -- 2.4 Summary -- References -- Chapter 3 Breakdown Voltage -- 3.1 One-Dimensional Abrupt Junction -- 3.2 Schottky Diode Edge Termination -- 3.2.1 Planar Schottky Diode Edge Termination -- 3.2.2 Planar Schottky Diode with Field Plate Edge Temination -- 3.2.3 Schottky Diode with Floating Metal Rings -- 3.2.4 Schottky Diode Edge Termination with Argon Implant -- 3.2.5 Schottky Diode Edge Termination with RESP Region -- 3.3 P-N Junction Edge Termination -- 3.3.1 Planar Junction Edge Termination -- 3.3.2 Planar Junction Edge Termination with Field Plate -- 3.3.3 Planar Junction Edge Termination with Floating Rings -- 3.3.4 Planar Junction Edge Termination with P-Extension -- 3.4 Summary -- References -- Chapter 4 PiN Rectifiers -- 4.1 One-Dimensional PiN Structure -- 4.2 Experimental Results -- 4.3 Summary -- References -- Chapter 5 Schottky Rectifiers -- 5.1 Schottky Rectifier Structure: Forward Conduction -- 5.1.1 Forward Conduction: Simulation Results.

5.1.2 Forward Conduction: Experimental Results -- 5.2 Schottky Rectifier Structure: Reverse Blocking -- 5.3 Schottky Rectifier Structure: Impact of Defects -- 5.4 Reliability Issues -- 5.5 Summary -- References -- Chapter 6 Shielded Schottky Rectifiers -- 6.1 Junction Barrier Schottky (JBS) Rectifier Structure -- 6.1.1 JBS Rectifier Structure: Forward Conduction Model -- 6.1.2 JBS Rectifier Structure: Reverse Leakage Model -- 6.1.3 JBS Rectifier Structure: Simulation Results -- 6.1.4 JBS Rectifier Structure: Experimental Results -- 6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure -- 6.2.1 TMBS Rectifier Structure: Simulation Results -- 6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure -- 6.3.1 TSBS Rectifier Structure: Simulation Results -- 6.3.2 TSBS Rectifiers: Experimental Results -- 6.4 Summary -- References -- Chapter 7 Metal-Semiconductor Field Effect Transistors -- 7.1 Trench Junction (Metal-Semiconductor) FET Structure -- 7.1.1 Forward Blocking -- 7.1.2 On-State -- 7.2 Trench MESFET Structure: Simulation Results -- 7.2.1 On-State Characteristics -- 7.2.2 Blocking Characteristics -- 7.2.3 Output Characteristics -- 7.3 JFET Structure: Simulation Results -- 7.4 Planar MESFET Structure -- 7.4.1 Forward Blocking -- 7.4.2 On-State Resistance -- 7.5 Planar MESFET Structure: Numerical Simulations -- 7.5.1 On-State Characteristics -- 7.5.2 Blocking Characteristics -- 7.5.3 Output Characteristics -- 7.5.4 Gate Contact Shielding -- 7.6 Experimental Results: Trench Gate Structures -- 7.7 Experimental Results: Planar Gate Structures -- 7.8 Summary -- References -- Chapter 8 The Baliga-Pair Configuration -- 8.1 The Baliga-Pair Configuration -- 8.1.1 Voltage Blocking Mode -- 8.1.2 Forward Conduction Mode -- 8.1.3 Current Saturation Mode -- 8.1.4 Switching Characteristics -- 8.1.5 Fly-Back Diode.

8.2 Baliga-Pair: Simulation Results -- 8.2.1 Voltage Blocking Mode -- 8.2.2 Forward Conduction Mode -- 8.2.3 Current Saturation Mode -- 8.2.4 Switching Characteristics -- 8.2.5 Fly-Back Diode -- 8.3 Baliga-Pair Configuration: Experimental Results -- 8.4 Summary -- References -- Chapter 9 Planar Power MOSFETs -- 9.1 Planar Power MOSFET Structure -- 9.1.1 Blocking Characteristics -- 9.1.2 Forward Conduction -- 9.1.3 Threshold Voltage -- 9.1.4 Threshold Voltage Simulations -- 9.1.5 Hot Electron Injection -- 9.2 Planar Power MOSFET Structure: Numerical Simulations -- 9.2.1 Blocking Characteristics -- 9.2.2 On-State Characteristics -- 9.2.3 Output Characteristics -- 9.3 Planar Power MOSFET: Experimental Results -- 9.3.1 Silicon Carbide MOSFET: Inversion Layer Mobility -- 9.3.2 The 4H-SiC Planar MOSFET: Experimental Results -- 9.4 Summary -- References -- Chapter 10 Shielded Planar MOSFETs -- 10.1 Shielded Planar MOSFET Structure -- 10.1.1 Blocking Mode -- 10.1.2 Forward Conduction -- 10.1.3 Threshold Voltage -- 10.1.4 ACCUFET Structure: Threshold Voltage Simulations -- 10.2 Planar Shielded Inversion-Mode MOSFET: Simulations -- 10.2.1 Blocking Characteristics -- 10.2.2 On-State Characteristics -- 10.2.3 Output Characteristics -- 10.3 Planar Shielded ACCUFET Structure: Simulations -- 10.3.1 Blocking Characteristics -- 10.3.2 On-State Characteristics -- 10.3.3 Output Characteristics -- 10.4 Planar Shielded MOSFET Structures: Experimental Results -- 10.4.1 Silicon Carbide MOSFET: Accumulation Layer Mobility -- 10.4.2 The Planar 4H-SiC Inversion-Mode MOSFET: Experimental Results -- 10.4.3 The 4H-SiC Accumulation-Mode Planar MOSFET Structure: Experimental Results -- 10.5 Summary -- References -- Chapter 11 Trench-Gate Power MOSFETs -- 11.1 Trench-Gate Power MOSFET Structure -- 11.1.1 Blocking Characteristics.

11.1.2 Forward Conduction -- 11.1.3 Threshold Voltage -- 11.2 Trench-Gate Power MOSFET Structure: Numerical Simulations -- 11.2.1 Blocking Characteristics -- 11.2.2 On-State Characteristics -- 11.2.3 Output Characteristics -- 11.3 Accumulation-Mode Trench-Gate Power MOSFET -- 11.4 Trench-Gate Power MOSFET: High Permittivity Gate Insulator -- 11.5 Trench-Gate Power MOSFET: Experimental Results -- 11.6 Summary -- References -- Chapter 12 Shielded Trench-Gate Power MOSFETs -- 12.1 Shielded Trench-Gate Power MOSFET Structure -- 12.1.1 Blocking Characteristics -- 12.1.2 Forward Conduction -- 12.1.3 Threshold Voltage -- 12.2 Shielded Trench-Gate Power MOSFET: Structure: Numerical Simulations -- 12.2.1 Blocking Characteristics -- 12.2.2 On-State Characteristics -- 12.2.3 Output Characteristics -- 12.3 Shielded Trench-Gate MOSFET: Experimental Results -- 12.4 Summary -- References -- Chapter 13 Charge Coupled Structures -- 13.1 Charge Coupled Silicon Carbide Structures -- 13.2 Charge Coupled Silicon Carbide Structure:Ideal Specific On-Resistance -- 13.3 Charge Coupled Schottky Rectifier Structure -- 13.3.1 Blocking Characteristics -- 13.3.2 0n-State Characteristics -- 13.4 Enhanced Charge Coupled Schottky Rectifier Structure -- 13.4.1 Blocking Characteristics -- 13.4.2 0n-State Characteristics -- 13.4.3 Charge Optimization -- 13.4.4 Charge Imbalance -- 13.5 Charge Coupled JFET Structure -- 13.5.1 Blocking Characteristics -- 13.5.2 0n-State Characteristics -- 13.5.3 Output Characteristics -- 13.6 Shielded Charge Coupled MOSFET Structure -- 13.6.1 Blocking Characteristics -- 13.6.2 On-State Characteristics -- 13.6.3 Output Characteristics -- 13.6.4 Switching Characteristics -- 13.7 Summary -- References -- Chapter 14 Integral Diodes -- 14.1 Trench-Gate MOSFET Structure.

14.2 Shielded Trench-Gate MOSFET Structure -- 14.3 Planar Shielded ACCUFET Structure -- 14.4 Charge Coupled MOSFET Structure -- 14.5 Summary -- References -- Chapter 15 Lateral High Voltage FETs -- 15.1 Fundamental Analysis -- 15.2 Lateral High Voltage Buried Junction FET Structure -- 15.3 Lateral High Voltage MESFET Structure -- 15.4 Lateral High Voltage MOSFET Structure -- 15.5 Lateral MOSFET Structure with Field Plates -- 15.6 Lateral High Voltage Shielded MOSFET Structure -- 15.7 Lateral High Voltage MOSFET Structure Optimization -- 15.8 Lateral HV-MOSFET Structure: Experimental Results -- 15.9 Summary -- References -- Chapter 16 Synopsis -- 16.1 Typical Motor Control Application -- 16.2 Motor Control Application: Silicon IGBT and P-i-N Rectifier -- 16.3 Motor Control Application: Silicon IGBT and SiC Schottky Rectifier -- 16.4 Motor Control Application: SiC MOSFET and Rectifier -- 16.5 Motor Control Application: Comparison of Cases -- 16.6 Summary -- References -- Index.