Defects-Recognition, Imaging and Physics in Semiconductors XIV -- Preface, Message and Committee -- Table of Contents -- Chapter 1: Defects in SiC -- Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography -- Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography -- Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy -- Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers -- Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide -- Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing -- Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings -- Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method -- Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC -- Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers -- Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation -- Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas -- Defect Related Leakage Current Components in SiC Schottky Barrier Diode -- Rapid Terahertz Imaging of Carrier Density of 3C-SiC -- Chapter 2: Nitride Materials and Devices -- Cathodoluminescence Study of Ammonothermal GaN Crystals -- The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals -- Defect Propagation from 3C-SiC to III-Nitride -- Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer -- Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs.

Chapter 3: III-V Compounds and Devices -- Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography -- Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping -- Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal -- Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study -- Defect Propagation in Broad-Area Diode Lasers -- Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers -- Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves -- Chapter 4: Photovoltaics: From Material to Module -- Lock-In Thermography and Related Topics in Photovoltaic Research -- EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells -- Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique -- Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods -- Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon -- Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon -- High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells -- Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction -- Structural Study of Small Angle Grain Boundaries in Multicrystalline Si -- Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications.

Change of the Characterization Techniques as Progress of CuInSe2-Based Thin-Film PV Technology -- Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals -- Reduction of Crack Formation in Transcription of Cu(In,Ga)Se2 Thin Film Solar Cell Structure -- Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode -- 2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module -- Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module -- Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure -- Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers -- Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation -- Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects -- Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy -- DLTS Study of Pd-H Complexes in Si -- Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements -- Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities -- Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region -- Reliability Improvement in Silicon Dioxide -- Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs -- Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers -- Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100) -- Effect of Si3N4 Coating on Strain and Fracture of Si Ingots.

Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction -- MicroRaman Spectroscopy of Si Nanowires: Influence of Size -- Chapter 6: Functional Oxides and Other Materials -- Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process -- Structural and Electronic Structure of SnO2 by the First-Principle Study -- XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method -- Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing -- Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution -- Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method -- Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide -- Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition -- Keywords Index -- Authors Index.