BULK MATERIALS: RESEARCH, TECHNOLOGY AND APPLICATIONS -- BULK MATERIALS: RESEARCH, TECHNOLOGY AND APPLICATIONS -- LIBRARY OF CONGRESS CATALOGING-IN-PUBLICATION DATA -- CONTENTS -- PREFACE -- Chapter 1 RADIOFREQUENCY ELECTRODYNAMIC PROPERTIES OF BULK LANTHANUM MANGANITES -- ABSTRACT -- INTRODUCTION -- 1. DYNAMICAL PROPERTIES OF BULK DOPED MANGANITES AT RADIOFREQUENCIES -- 1.1. Solution of the Model Problem of Penetration of Electromagnetic Field through a Plate of a Conductive Ferromagnetic Material under Conditions of Normal Skin-Effect -- 1.2. Penetration of Radiofrequency Electromagnetic Field through Bulk Doped Lanthanum Manganites. Investigations at Room Temperature -- 1.3. Frequency Dependence of the Penetration Coefficient -- 1.4. Rotation of Polarization Plane and Ellipticity of Radiofrequency Electromagnetic Waves upon Penetration through Bulk Doped Lanthanum Manganites in the Geometry of the Cotton-Mouton Effect -- 1.5. Penetration of a Radio-Frequency Electromagnetic Field through the Bulk Doped La-Pb and La-Y-Ba Manganites in a Wide Range of Frequencies -- 1.6. Investigation of Magnetic Phase Transition in Bulk Doped La-Pb and La-Y-Ba Manganites by Penetration of Radiofrequency Electromagnetic Field -- 2.3. Penetration of a Radio-Frequency Electromagnetic Field through Bulk Doped La-Er-Ba Lanthanum Manganites in Paramagnetic Range of Temperatures -- 1.7. Radiofrequency Electromagnetic Properties of Doped La-Sr Manganites. Compositions with Basic Ferro- and Antiferromagnetic States -- 1.8. Radiofrequency Electromagnetic Properties of Pb0.4La0.6MnO3 Manganites upon Magnetization with Static Magnetic Field -- 1.9. Complicated Dynamics of Oscillation of Magnetic Flux in Bulk La-Pb Doped Manganite -- 2. DOPED LANTHANUM MANGANITES AS ADVANCED MATERIALS FOR SENSORS OF DC AND RF MAGNETIC FIELDS.

2.1. Utilization of Magnetoresistive Properties of Bulk Polycrystalline Manganites for Detection of Static Magnetic Fields -- 2.2. Combined Ferrozonde-Type Sensor Based on Bulk Doped Lanthanum Manganites -- 2.3. Sensor of Magnetic Field with Closed Magnetic Circuit made of the La-Pb Manganite -- CONCLUSION -- REFERENCES -- Chapter 2 SINTER-ALLOYING AND PROPERTIES OF MANGANESE STEELS - STATE OF THE ART -- ABSTRACT -- INTRODUCTION -- SINTERING AND PROPERTIES OF MANGANESE STEELS, PART I -- Thermodynamics of Mn-O System -- Properties of Sintered Manganese Steels Attained under Various Processing Conditions -- Various Processing Conditions -- Short Time Induction Sintering -- Effect of Some Sintering Conditions and Base Materials -- Effect of Additional Elements -- Molybdenum -- Boron -- High Alloyed Manganese Steels -- Liquid Phase Sintering of Fe-Mn Steels -- Alloying of Manganese Steels by Elements of High Oxygen Affinity -- Manganese Carrier - Diffusion Manganese Prealloyed Powders -- Sintering in High Purity Hydrogen -- Summary of Material and Processing Variables Used for Preparation of Sintered Steels Presented in Part I -- ALLOYING AND SINTERING OF MANGANESE STEELS IN TERM OF HIGH MANGANESE VAPOR PRESSURE, PART II -- Effect of Manganese Vapor Pressure on Sintering -- Basic Formulas and Application Conditions for Sintering of Mixed Manganese Steels -- Effect of Manganese Vapor on Alloying of Powder Fe - Mn Compacts During Sintering -- Extreme Sintering Conditions -- Manganese Gas Phase Sintering and Alloying According to Dilatometer Tests -- Sintering of Manganese Steels under Effect of Manganese Vapor -- Sintering in Continuously Operating Furnaces -- Sintering of Hybrid Steels with Addition of Manganese -- Sintering in Semi-Closed Containers -- Effect of Manganese on Phase Transformation of Austenite -- CONCLUSION -- ACKNOWLEDGMENTS.

REFERENCES -- Chapter 3 SURFACE TREATMENT EFFECTS ON BULK MATERIAL FATIGUE RESISTANCE -- ABSTRACT -- INTRODUCTION -- EXPERIMENTAL RESULTS -- NUMERICAL MODELS -- CONCLUSION -- REFERENCES -- Chapter 4 DEVELOPMENT OF CONTROLLABLE CHEMICAL SYNTHETIC ROUTES TO ELEMENTAL SELENIUM AND SOME METAL CHALCOGENIDES AS BULK MATERIALS AND THIN FILMS -- ABSTRACT -- 1. INTRODUCTION -- 2. CHEMICAL SYNTHESIS OF ELEMENTAL SELENIUM AND METAL CHALCOGENIDE MATERIALS AS BULK PRECIPITATES AND IN THIN FILM FORM -- 2.1. Pre-Deposition Treatment of the Substrates -- 2.2. Synthetic Method for Deposition of Elemental Selenium in Thin Film Form or as Bulk Precipitate -- 2.3. Thin Films and Bulk Precipitates of Bismuth Selenide and Two Copper Selenides (CuSe and Cu3Se2) -- 2.4. Synthesis of Iron, Nickel and Cobalt Oxides in Thin Film Form and as Bulk Precipitates -- 3. STRUCTURAL CHARACTERISTICS OF THE SYNTHESIZED MATERIALS -- 3.1. XRD Studies of Elemental Selenium -- 3.2. XRD Studies of Bismuth(III) Selenide -- 3.3. XRD Studies of Cu3Se2 -- 3.4. XRD Studies of CuSe -- 3.5. XRD Studies of Iron Oxide -- 3.6. XRD Studies of Nickel Oxide -- 3.7. XRD Studies of Cobalt Oxide -- 4. IR STUDIES -- 4.1. IR Study of the Synthesized Iron Oxide Phases -- 4.2. IR Study of the Synthesized Nickel Oxide Phases -- 4.3. IR Study of the Synthesized Cobalt Oxide Phases -- 5. OPTICAL PROPERTIES IN THE UV-VIS-NIR SPECTRAL RANGE -- 5.1. Optical Properties of Elemental Selenium Deposited in Thin Film Form -- 5.2. Optical Properties of Bismuth and Copper Selenides -- 5.2.1. Optical properties of Bi2Se3 thin films -- 5.2.2. Optical properties of Cu3Se2 thin films -- 5.2.3. Optical properties of CuSe thin films -- 5.3. Iron, Cobalt and Nickel Oxides -- 5.3.1. Optical properties of iron oxide thin films -- 5.3.2. Optical properties of nickel oxide thin films.

5.3.3. Optical properties of cobalt oxide thin films -- 6. ELECTRICAL PROPERTIES OF THE SYNTHESIZED CHALCOGENIDE MATERIALS IN THIN FILM FORM -- 6.1. Electrical Resistivity of the Synthesized Thin Films -- 6.2. Temperature Dependence of the Dark Electrical Resistivity of the Films (R = f(T) function). Determination of Thermal Band Gap Energies and Impurity Levels Ionization Energies -- 6.3. Temperature Dependence of Resistivity in Bismuth(III) Selenide Thin Films -- 6.4. Temperature Dependence of Resistivity in Iron, Nickel and Cobalt Oxides in Thin Film Form -- REFERENCES -- Chapter 5 COMBINATORIAL FRICTION MATERIALS RESEARCH -- ABSTRACT -- INTRODUCTION -- COMBINATORIAL APPROACH TO SCREENING OF RAW MATERIALS -- Combinatorial Approach and Classification of Raw Materials -- Raw Materials Selection Standards -- Wear Mechanisms and Friction Fractography of Raw Materials -- Roles and Friction Performance Spectrum of Ingredients -- DESIGN OF FRICTION MATERIAL FORMULATIONS AND OPTIMIZATION OF FRICTION PERFORMANCE -- Golden Section Approach to Design of Friction Material Formulations -- Phase 1 -- Phase 2 -- Phase 3 -- FUZZY COMPREHENSIVE EVALUATION OF FRICTION PERFORMANCE -- Friction Stability -- Overall Wear Rate -- Comprehensive Evaluation of Friction Performance -- Case Study -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- Chapter 6 GRAIN-SIZE DEPENDENT THERMAL, ELECTRICAL AND MECHANICAL PROPERTIES OF BULK NANOCRYSTALLINE MATERIALS -- ABSTRACT -- 1. INTRODUCTION -- 2. PHONON THERMAL CONDUCTIVITY OF BULK THERMOELECTRIC MATERIALS -- 2.1. Introduction -- 2.2. Model -- 2.3. Comparison and Discussion -- 2.4. Summary -- 3. ELECTRICAL CONDUCTIVITY OF BULK POLYCRYSTALLINE MATERIALS -- 3.1. Introduction -- 3.2. Model -- 3.3. Numerical Results and Discussion -- 3.4. Summary -- 4. EFFECTIVE YOUNG'S MODULUS OF BULK NANOCRYSTALLINE MATERIALS -- 4.1. Introduction.

4.2. Theoretical Description -- 4.2.1. Interface effect in the grains region -- 4.2.2. The strain gradient elasticity in the grain-boundary region -- 4.3. Effective Modulus of Cubic Grain -- 4.4. Effective Modulus of the Grain-Boundary -- 4.5. Numerical Results and Discussion -- 4.6. Summary -- 5. CONCLUSION AND OUTLOOK -- 6. ACKNOWLEDGMENT -- APPENDIX A -- APPENDIX B -- 7. REFERENCES -- Chapter 7 ELECTRONIC PROPERTIES AND BONDING MECHANISM OF THE MERCURY VACANCY AND ARSENIC IMPURITIES IN HG1-XCDXTE -- ABSTRACT -- 1. INTRODUCTION -- 2. RELAXATIONS AND BONDING MECHANISM IN HG1−XCDXTE WITH MERCURY VACANCY DEFECT -- 2.1. Computational Procedure -- 2.2. Structural Relaxation and Formation Energy -- 2.3. Bonding Mechanism -- 3. ELECTRONIC PROPERTIES AND CHEMICAL TRENDS OF THE ARSENIC IN SITU IMPURITIES IN HG1−XCDXTE -- 3.1. Computational Procedure -- 3.2. Structural Relaxation -- 3.3. Bonding Mechanism -- 3.4. Formation Energy -- 4. THE ARSENIC IMPURITY CLUSTERS IN MOLECULAR BEAM EPITAXY (MBE) GROWN HGCDTE -- 4.1. Computational Methods -- 4.2. Chemical Potential Dependence of the Formation Energy -- 4.3. Possible Configurations for the Complex Defects Asn (n = 1, 2, and 4) -- 4.3.1. Arsenic Tetramers -- 4.3.2. Arsenic Dimer (Asd ) and Singlet (Ass ) -- 4.3. Comparison of the Formation Energies for Asn (n = 1, 2, and 4) -- 5. CONCLUSION -- ACKNOWLEDGMENT -- REFERENCES -- Chapter 8 SEARCH FOR INCREASED PERFORMANCE IN BIFEO3: EFFECT OF A-SITE SUBSTITUTION -- ABSTRACT -- 1. INTRODUCTION -- 2. EXPERIMENT -- 3. RESULTS AND DISCUSSION -- 4. CONCLUSION -- REFERENCES -- Chapter 9 UNUSUAL PROPERTIES OF LASER-PROCESSED STRONTIUM RUTHENATES -- ABSTRACT -- PREFACE1 -- 1. INTRODUCTION -- 2. SAMPLE PREPARATION -- 2.1 X-Geometry -- 2.2 Parent Materials -- 2.3 Cutting and Polishing -- 2.4 Substrates, Glues and Waxes -- 2.5 Metal Deposition and Composition Details.

2.6 Parameters of Laser Processing.