Cover image for Germanium : Properties, Production and Applications.
Germanium : Properties, Production and Applications.
Title:
Germanium : Properties, Production and Applications.
Author:
Germanno, Regina V.
ISBN:
9781624175282
Personal Author:
Physical Description:
1 online resource (338 pages)
Series:
Chemical Engineering Methods and Technology
Contents:
GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS -- GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS -- CONTENTS -- PREFACE -- DEFECTS IN GERMANIUM: THEORETICAL ASPECTS -- 1.Introduction -- 2.Techniquesforidentificationofdefectsingermanium -- 2.1.Theoreticalmethods -- 2.1.1.Densityfunctionaltheory -- 2.1.2.Boundaryconditions:clustersandsupercells -- 2.1.3.Tacklingthebandgapproblem -- 2.1.4.Calculationofobservables -- 2.2.Experimentalmethods -- 3.Intrinsicdefects -- 3.1.Theself-interstitial -- 3.1.1.Structureandenergetics -- 3.1.2.Ionizationlevels -- 3.1.3.Diffusion -- 3.2.Thevacancy -- 3.2.1.Geometryandelectronicstructure -- 3.2.2.Formationenergies -- 3.3.Thedivacancy -- 3.4.Furthervacancyclustering -- 4.Oxygen -- 4.1.Interstitialoxygen -- 4.2.Oxygendimer -- 4.3.Complexesofself-interstitialswithoxygen -- 4.4.Thermaldonors -- 4.4.1.Earlystateaggregation -- 4.4.2.AtomicStructureofTDD's -- 4.4.3.Electronicstructuremodel -- 4.4.4.Furtherobservables -- 4.5.Thevacancy-oxygencomplex(Acenter) -- 4.5.1.Structureandvibrationalmodes -- 4.5.2.Ionizationlevels -- 4.6.Formation:ametastableVOprecursor -- 4.6.1.Annealing -- 4.7.Vacancy-di-oxygen(VO2)defects -- 4.7.1.Structure -- 4.7.2.Ionizationlevels -- 4.7.3.Localvibrationalmodes -- 5.Hydrogen -- 5.1.Isolatedinterstitialhydrogen -- 5.1.1.Geometry -- 5.1.2.Localvibrationalmodes -- 5.1.3.Ionizationlevels -- 5.2.Hydrogendimer -- 5.3.Interactionofhydrogenwithotherdefects -- 5.4.Vacancy-hydrogen(VmHn)complexes -- 5.5.Hydrogen-inducedplatelets -- 6.Shallowdopantsandrelateddefects -- 6.1.Boron -- 6.2.InterstitialBoron -- 6.2.1.Geometry -- 6.2.2.Ionizationlevels -- 6.3.Borondiffusion -- 6.3.1.Othergroup-IIIacceptors -- 6.4.Group-Vdonors -- 6.5.Donor-vacancycomplexes(E-centers) -- 6.5.1.Structuregeometry -- 6.5.2.Ionizationlevels -- 6.5.3.Diffusion -- 6.6.Furtherdonor-vacancyaggregation.

6.7.InterstitialPhosphorus -- 6.8.Diffusionofgroup-Vdonors -- 6.8.1.Influenceofthecarboncontent -- 7.Metals -- 7.1.Substitutional(Ms) -- 7.2.InteractionbetweenMsandvacancies(Ms-V) -- 7.3.Self-interstitial-metalcomplexes(I-Ms) -- 7.4.Interstitialmetals(Mi) -- 7.5.Substitutional-Interstitialpairs(Ms-Mi) -- 8.OtherImpurities -- 8.1.Carbon -- 8.2.Nitrogen -- 8.3.Chalcogens -- 9.Differencesbetweendefectsinsiliconandgermanium -- 10.Conclusionandoutlook -- References -- ADefectssignatures:Experimentvs.First-Principlescalculations -- PROPERTIES AND GENERATION BY IRRADIATION OF GERMANIUM POINT DEFECTS IN GE-DOPED SILICA -- ABSTRACT -- 1. INTRODUCTION -- 1.1. SiO2,GeO2 and GeO2-SiO2 Glasses -- 1.2. Point Defects -- 1.3. Photosensitivity and Second Harmonic Generation -- 1.4. Oxygen Deficiency -- 1.4.1. The Oxygen Mono Vacancy -- 1.4.2. Germanium Lone Pair Center (GLPC) -- 1.5. Radiation Effects -- 1.6. Structural Models of the Paramagnetic Point Defects -- 1.7. H(II) Paramagnetic Point Defects -- 1.8. Radiation Induced Absorption Bands -- 1.9. Generation Mechanisms -- 2. MATERIALS -- 2.1. Sol-Gel Preparation Technique -- 2.2. Plasma-Activated Chemical Vapour Deposition -- 2.3. Samples -- 3. GENERATION OF GE PARAMAGNETIC POINT DEFECTS -- 3.1. Induced EPR Activity: General Features -- 3.2. EPR Line Shape of the Ge Related Defects -- 3.3. Decomposition of the Experimental EPR Spectra -- 3.4. Paramagnetic Point Defect Concentrations Induced by Irradiation -- 3.4.1. Type 1 Samples -- 3.4.2. Type 3 Samples -- 3.4.3. Type 4 Samples -- 3.4.4. Type 5 Samples -- 3.4.5. PCVD Samples -- 3.5. Ge(1) Point Defects -- 3.6. Ge(2) and E'Ge Point Defects -- 4. REFRACTIVE INDEX VARIATIONS -- 4.1. Absorption Induced Activity -- 4.2. Dependence of the Refractive Index Changes on Ge(1) Defects -- 5. INDUCED GLPC -- 5.1. PL Spectra of the Induced GLPC.

5.1.2. PLE Spectra of the Induced GLPC -- 5.1.3. Time Decay Measurements of the Induced β Band -- 5.1.4. Temperature Dependence of the PL Spectra -- 5.1.5. Time Dependence of the Emission -- 5.1.6. Intersystem Crossing Process in the Induced GLPC -- 5.1.7. Paramagnetic Defects Related to the Induced GLPC -- 5.1.8. GLPC Generation in PCVD Material -- 5.1.9. Discussion on the Emission of the Induced GLPC -- 5.2. Dose Dependence of the Induced Point Defects in Sample B0 -- 5.3. Comparison of the γ and the β Irradiations -- 5.4. Thermal Stability of the Induced GLPC and PL Profile Modification -- 5.5. Temperature Dependence of the PL Spectra of the Residual GLPC -- 5.6. Time Dependence of the Emission of the Residual GLPC -- 5.7. Intersystem Crossing Process of the Residual GLPC -- CONCLUSION -- REFERENCES -- GERMANIUM ENCAGED FULLERENE-SYNTHESIS, EXTRACTION, THEORETICAL CALCULATION AND THEIR POSSIBLE APPLICATION -- 1. ABSTRACT -- 2. INTRODUCTION -- 3. OVERVIEW -- 4. SYNTHESIS OF Ge ENDOHEDRAL METALLOFULLERENE -- 5. ISOLATION AND PURIFICATION OF Ge ENDOHEDRAL METALLOFULLERENE -- 6. CHARACTERIZATION OF Ge ENDOHEDRAL METALLOFULLERENE -- 7. THEORETICAL CALCULATIONS OF Ge ENDOHEDRAL METALLOFULLERENE -- 7.1. Encapsulation of Ge2 Inside C60 -- 8. APPLICATION OF Ge ENDOHEDRAL METALLOFULLERENE -- ACKNOWLEDGMENTS -- REFERENCES -- CHANGE THE PROPERTIES OF SILICON AND GERMANIUM STRUCTURES WITH FILMS OF OXIDE AND FLUORIDE RARE EARTH ELEMENTS DURING EXTERNAL IMPACTS -- ABSTRACT -- I. INTRODUCTION -- II. EXPERIMENTAL SAMPLES -- A. Fluoride REE Films on Germanium Substrates -- B. Oxide REE Films on Silicon Substrates -- III. KINETIC CHARACTERISTICS OF ELECTROFORMING PROCESS OXIDE AND FLUORIDE REE FILM STRUCTURES -- IV. THE IMPACT OF ELECTRIC FIELD -- A. Structure with Fluoride Rare Earth Elements Films -- 1. Assessment High-Frequency Interface Traps Capacity.

2. Assessment of Traps Energy Situation in Germanium Band Gap -- 3. Change the Distribution of the Interface States Energy Density in Germanium Band Gap during the Electroforming Process -- B. Structure with Rare Earth Element Oxide Films -- 1. REE Oxides on n-Type Silicon Substrates -- 2. P-type Silicon Structure with Films of Oxides REE -- CONCLUSION -- NOTE -- REFERENCES -- APPLICATIONS OF RF SPUTTERED GEXSI1-X AND GEXSI1-XOY THIN FILMS FOR UNCOOLED INFRARED DETECTORS -- ABSTRACT -- I. INTRODUCTION -- A. Infrared Radiation -- B.Applications of Infrared Radiation -- C. Infrared Detectors -- Photon Detector -- Thermal Detector -- D. Bolometer -- E.Bolometer Figures of Merits -- Spectral Response -- TCR -- Responsivity -- Detectivity -- Noise Equivalent Power (NEP) -- Noise Equivalent TemperatureDifference (NETD) -- F. ThermisterMaterial -- II. THIN FILM DEPOSITION -- A. a-GexSi1-xThin Film Deposition -- B. a-GexSi1-xOyThin Film Deposition -- III. PROPERTIES OF GEXSI1-X AND GEXSI1-XOYTHIN FILM -- IV. APPLICATIONS OF RFSPUTTEREDGEXSI1-X AND GEXSI1-XOY FILMS: MICROBOLOMETER FABRICATION -- V. BOLOMETER CHARACTERIZATION -- VI. PERFORMANCE OF MICROBOLOMETER -- VII. NOISE REDUCTION OF A-GEXSI1-XOY MICROBOLOMETER BY FORMING GAS PASSIVATION -- VIII. EXPERIMENTAL DETAILS FOR FORMING GAS PASSIVATION -- IX. RESULTS OF FORMING GAS PASSIVATION -- CONCLUSION -- REFERENCES -- NEW GENERATION GERMANIUM DETECTORS FOR DOUBLE BETA DECAY SEARCHES -- Abstract -- 1.PotentialofDoubleBetaDecay -- 2.DetectionofDoubleBetaDecay -- 3.NewGenerationGermaniumExperiments -- 4.BackgroundReductionandSensitivity -- 4.1.Simulation -- 4.2.RejectionofBackground -- 4.2.1.Granularity -- 4.2.2.Segmentation -- 4.2.3.PSA -- 4.3.EfficiencyandSensitivity -- 4.3.1.EfficiencytoSignal -- 4.3.2.Sensitivity -- 5.Conclusion -- Acknowledgments -- References.

GROWTH OF Ge CRYSTALS WITH EXTREMELY LOW DISLOCATION DENSITY -- ABSTRACT -- I. INTRODUCTION -- II. DISLOCATION-FREE Ge CRYSTAL GROWTH BY THE NEW CZOCHRALSKI METHOD -- A. Difficulty in Growth of Dislocation-Free Ge Crystals -- B. Procedure of New CZ Growth -- C. Grown Ge Boules -- D. Electrical and Chemical Valuation of Grown Ge Crystals -- E. Evaluation of Grown Ge Crystals by Infrared Absorption -- F. Role of B2O3 Liquid in Growth of Ge Crystals -- III. OXYGEN-ENRICHED Ge CRYSTAL GROWTH BY THE NEW CZOCHRALSKI METHOD -- A. Oxygen in Ge -- B. Procedure of O-Enriched Ge Crystal Growth -- C. O-Enriched Ge Boules -- D. Evaluation of Oxygen Concentration in O-Enriched Ge Crystals by Infrared Absorption -- IV. SOLUBILITY AND SEGREGATION OF OXYGEN INTO Ge -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- INDEX.
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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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