MOCVD growth of GaN-based high electron mobility transistor structures.
Title:
MOCVD growth of GaN-based high electron mobility transistor structures.
Author:
Chen, Jr-Tai.
ISBN:
9789175190730
Personal Author:
Physical Description:
1 online resource (81 pages)
Series:
Linköping Studies in Science and Technology. Dissertations ; v.1662
Linköping Studies in Science and Technology. Dissertations
Contents:
Abstract -- Populärvetenskaplig sammanfattning -- Preface -- Acknowledgement -- Content -- 1 History and challenges -- 2 Properties of III-nitrides -- 3 Fundamentals of GaN-based HEMT structures -- 4 MOCVD growth of GaN-based HEMT structures -- 5 Characterizations of GaN-based HEMT structures -- References -- Publications.
Local Note:
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
Genre:
Electronic Access:
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