Contents -- Symbols -- 1. Semiconductor diodes -- 1.1. Methods of making junctions -- 1.2. Rectifying diodes -- 1.3. Zener diodes -- 1.4. High-frequency diodes -- 1.5. Variable-capacitance diodes -- 1.6. Switching diodes -- 1.7. Tunnel and backward diodes -- Summary -- Review questions and problems -- 2. Bipolar junction transistors -- 2.1. The structure and operation of a BJT -- 2.2. Basic configurations and modes of operation -- 2.3. Static volt-ampere characteristics of BJTs -- 2.4. Two-port representation of the transistor -- 2.5. Transistor models -- 2.6. High-frequency characteristics of a transistor -- 2.7. Types and ratings of BJTs -- Summary -- Review questions and problems -- 3. Thyristors -- 3.1. Structure and operation of pnpn diodes -- 3.2. Types of thyristors -- Summary -- Review questions and problems -- 4. Field-effect transistors -- 4.1. Junction field-effect transistors -- 4.2. MOSFETs -- 4.3. Parameters, equivalent circuit and frequency properties of FETs -- Summary -- Review questions and problems -- 5. Elements of integrated circuits -- 5.1. Isolation of elements -- 5.2. Bipolar integrated circuits -- 5.3. MOS ICs -- 5.4. Individual processing -- 5.5. Complexity of integrated circuits and trends of microelectronics -- Summary -- Review questions -- 6. Acoustic wave devices -- 6.1. Acoustic waves -- 6.2. Bulk acoustic wave devices -- 6.3. Surface acoustic wave devices -- Summary -- Review questions -- 7. Optoelectronic semiconductor devices -- 7.1. Optical fibers -- 7.2. Light sources -- 7.3. Semiconductor photoelectrical devices and photodetectors -- 7.4. Optocouplers -- Summary -- Review questions and problems -- 8. Display devices -- 8.1. Cathode-ray tubes -- 8.2. Flat-panel displays -- Summary -- Review questions -- Appendix -- References.