Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001
Title:
Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001
Author:
International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan)
ISBN:
9780444513397
Publication Information:
Amsterdam : London : Elsevier, 2003.
Physical Description:
x, 150 p. : ill. ; 24 cm.
Abstract:
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
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Electronic Access:
ScienceDirect An electronic book accessible through the World Wide Web; click for informationPublisher description http://www.loc.gov/catdir/enhancements/fy0615/2003271753-d.html