Machine generated contents note: 1.Introduction / Matthias Rudolph -- 1.1.Model extraction challenges -- 1.2.Model extraction workflow -- References -- 2.DC and thermal modeling: III-V FETs and HBTs / David E. Root -- 2.1.Introduction -- 2.2.Basic DC characteristics -- 2.3.FET DC parameters and modeling -- 2.4.HBT DC parameters and modeling -- 2.5.Process control monitoring -- 2.6.Thermal modeling overview -- 2.7.Physics-based thermal scaling model for HBTs -- 2.8.Measurement-based thermal model for FETs -- 2.9.Transistor reliability evaluation -- Acknowledgments -- References -- 3.Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling / Joseph M. Gering -- 3.1.Introduction -- 3.2.Test structures with calibration and de-embedding -- 3.3.Methods for extrinsic parameter extraction used in HBTs -- 3.4.Methods for extrinsic parameter extraction used in HEMTs -- 3.5.Scaling for multicell arrays -- References -- 4.Uncertainties in small-signal equivalent circuit modeling / Matthias Ferndahl -- 4.1.Introduction -- 4.2.Uncertainties in direct extraction methods -- 4.3.Optimizer-based estimation techniques -- 4.4.Complexity versus uncertainty in equivalent circuit modeling -- 4.5.Summary and discussion -- References -- 5.The large-signal model: theoretical foundations, practical considerations, and recent trends / Masaya Iwamoto -- 5.1.Introduction -- 5.2.The equivalent circuit -- 5.3.Nonlinear model constitutive relations -- 5.4.Table-based models -- 5.5.Models based on artificial neural networks (ANNs) -- 5.6.Extrapolation of measurement-based models -- 5.7.Charge modeling -- 5.8.Terminal charge conservation, delay, and transit time for HBT models -- 5.9.FET modeling in terms of a drift charge concept -- 5.10.Parameter extraction of compact models from large-signal data -- 5.11.Conclusions -- References -- 6.Large and packaged transistors / Matthias Rudolph -- 6.1.Introduction -- 6.2.Thermal modeling -- 6.3.EM simulation -- 6.4.Equivalent-circuit package model -- References -- 7.Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors / Raymond Quere -- 7.1.Introduction -- 7.2.Nonlinear electrothermal modeling -- 7.3.Trapping effects -- 7.4.Characterization tools -- 7.5.Conclusions -- Acknowledgment -- References -- 8.Optimizing microwave measurements for model construction and validation / Giovanni Crupi -- 8.1.Introduction -- 8.2.Microwave measurements and de-embedding -- 8.3.Measurements for linear model construction -- 8.4.Measurements for model validation -- 8.5.Measurements for nonlinear model construction -- References -- 9.Practical statistical simulation for efficient circuit design / Hongxiao Shao -- 9.1.Introduction -- 9.2.Approach, model development, design flow -- 9.3.Examples of application to real circuits -- 9.4.Summary -- Acknowledgments -- References -- 10.Noise modeling / Manfred Berroth -- 10.1.Fundamentals -- 10.2.Noise sources -- 10.3.Noise analysis in linear network theory -- 10.4.Noise measurement setups -- 10.5.Transistor noise parameter extraction -- 10.6.Summary -- References.