Introduction -- ALD, MOCVD, and MBE deposition of rare earth oxides. - Requirements of precursor for MOCVD and ALD of rare earth oxides -- Models for ALD and MOCVD growth of rare earth oxides -- Growth of oxides with complex stoichiometry by ALD, e.g. La1-xCaxMnO3 -- Fabrication and characterization of rare earth scandate thin films prepared by pulsed laser deposition -- Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD -- Local atomic environment of high-k oxides on silicon probed by X-ray absorption spectroscopy, and advanced transmission electron microscopy techniques (TEM-EELS) -- Strain-relief at internal dielectric interfaces in high-k gate stacks with transition metal and rare earth atom oxide dielectrics -- Electrical characterization of rare earth oxides grown by ALD -- Dielectric properties of rare-earth oxides: general trends from theory -- Charge traps in high-k dielectrics: ab initio study of defects in Pr-based materials -- Experimental determination of the band offset of rare earth oxides on various semiconductors -- Band edge electronic structure, and band offsets of transition metal/rare earth oxide dielectrics -- Rare earth oxides in microelectronics -- Requirements of oxides as gate dielectrics for CMOS devices, and ultimate scaling -- The magneto-electric properties of RMnO compounds -- Sesquioxides as host materials for rare-earth-doped bulk lasers and active waveguides.