Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Title:
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Author:
Hieckmann, Ellen
Personal Author:
Publication Information:
Cambridge, MA MyJoVE Corp 2016
Physical Description:
online resource (674 seconds)
Series:
Engineering
General Note:
Title from resource description page
Abstract:
The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.
Reading Level:
For undergraduate, graduate, and professional students
Subject Term:
Electronic Access:
https://www.jove.com/t/53872