CONTENTS -- Preface -- Photographs at WOFE 2004 -- I. Frontiers in Electronics: Technology Trends and Future Concepts -- Are we at the End of CMOS Scaling? -- 3D Size Effects in Advanced SOI Devices -- Frontiers of Nano-Bio System -- Challenges For Future Semiconductor Manufacturing -- Nanoelectronics - Opportunities and Challenges -- Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology -- II. CMOS Technology: Nanoscale Physics New Materials and Structures -- Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices -- Device Simulation Demands of Upcoming Microelectronics Devices -- SON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices -- Highly Scaled CMOS Device Technologies with New Structures and New Materials -- Performance Limitations of Si CMOS and Alternatives for Nanoelectronics -- CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era -- Novel Dielectric Materials for Future Transistor Generations -- Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks -- Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller Effect -- Advanced Cooling Technologies For Microprocessors -- A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices -- Undoped Body Symmetric Double Gate MOSFET Modeling -- III. CMOS Technology: Device and Process Characterization -- Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8 -- Deformable Electronic Surfaces -- Current Issues and Future Prospects of Lithography -- A Theoretical Study of Point Defects in Zirconia-Silicon Interfaces -- Elastomeric Interconnects -- IV. Nanowire/Nanotube and Quantum Device.

On the Possibility of an Intersubband Laser in Silicon-on-Insulator -- Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era -- Ballistic Electron Acceleration Negative-Differential-Conductivity Devices -- Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers -- V. Spintronics and Emerging High-Speed Devices -- High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures -- Recent Progress on GaN-Based Electron Devices -- Advancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology -- A Quantum Dot Microcavity Terahertz Laser -- The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications -- Enhancing Power Electronic Devices with Wide Bandgap Semiconductors -- VI. Optoelectronics -- Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications -- Recent Development of Sb-Based Phototransistors in the 0.9- to 2.2-um Wavelength Range For Applications to Laser Remote Sensing -- Ultra Violet Detection Sensors -- Tunable Coherent Radiation from Terahertz to Microwave by Mixing Two Infrared Frequencies in a 47-mm-Long GaSe Crystal -- High Power Type-I GaSb-Based Lasers -- VII. Terahertz Devices and Concepts -- Bio-Molecular Inspired Electronic Architectures for Enhanced Sensing of THz-Frequency Bio-Signatures -- Spin Dependent Transport in Quantum and Classically Configured Devices -- Biologically-Inspired Chemically-Directed Self-Assembly of Semiconductor Quantum-Dot-Based Systems: Phonon-Hole Scattering in DNA Bound to DNA-Quantum-Dot Complexes -- Terahertz Signal Transmission in Molecular Systems -- Simulating Nanoscale Semiconductor Devices -- VIII. Novel Devices and Applications.

Recent Progresses of Application-Oriented MEMS Through Industry-University Collaboration -- Mixed-Valence Transition Metal Complex Based Integral Architecture for Molecular Computing (I): Attachment of Linker Molecule to Silicon (100)-2x1 Surface -- Silicon Fibre Technology Development for Wearable and Ambient Electronics Applications -- Silicon-Based Integrated MOSFETs and MESFETs: A New Paradigm for Low Power Mixed Signal Monolithic Systems Using Commercially Available SOI -- Design Modeling Testing and Spice Parameter Extraction of DIMOS Transistor in 4H-Silicon Carbide -- Author Index.