CONTENTS -- Low-Dimensional Systems -- Energy States in Quantum Dots -- 1. Introduction -- 2. Description of Pseudopotential Techniques -- 2.1. Calculation of the strain profile -- 2.2. Constructing the single particle Hamiltonian -- 3. Recent Applications -- 3.1. Pyramidal quantum dots: Single particle electron and hole states -- 3.2. Lens shaped dots: The effect of changing the shape and composition profile -- 3.3. Multiple-exciton states in self-assembled quantum dots -- References -- Self-Organized Quantum Dots -- 1 Introduction -- 2 Quantum Dot Self-Assembly -- 2.1 Equilibrium properties of coherent 3D islands -- 2.2 Formation and evolution of coherent 3D islands -- 3 Self-Organization of 3D island "Quantum Dots" -- 3.1 Single Layers -- 3.2 Multilayers -- 3.3 Summary and Outlook -- References -- Growth Structures and Optical Properties of Ill-Nitride Quantum Dots -- 1. Introduction -- 2. Growth and Structures -- 2.1 MBE -- 2.2 MOCVD -- 2.3 Other Techniques -- 3. Optical Properties of Ill-Nitride QDs -- 3.1 Effects of quantum confinement strain and polarization -- 3.2 GaN quantum dots -- 3.3 InGaN quantum dots -- 4. Summary -- References -- Theory of Threshold Characteristics of Quantum Dot Lasers: Effect of Quantum Dot Parameter Dispersion -- 1. Introduction -- 2. Basic Equations -- 3. Gain Spectrum and Spontaneous Radiative Recombination Current -- 3.1. Equilibrium filling of QDs (relatively high temperatures and/or shallow potential wells) -- 3.2. Nonequilibrium filling of QDs (relatively low temperatures and/or deep potential wells -- region C in Fig. 2) -- 4. Threshold Current Density and Optimization of a Laser -- 4.1. Carrier photoexcitation from QDs to the continuum -- 4.2. Critical tolerable parameters.

4.3. Equilibrium filling of QDs and narrow line of the quantized energy distribution -- 4.4. Nonequilibrium filling of QDs -- 5. Violation of the Charge Neutrality in QDs -- 5.1. Calculations for a p-i-n heterostructure -- 5.2. Effect of neutrality violation on the optimization of a laser -- 5.3. Gain-current dependence -- 5.4. Current-voltage dependence -- 6. Temperature Dependence of the Threshold Current -- 6.1. Threshold current density and its components -- 6.2. Characteristic temperature -- 6.3. Temperature dependence of jth and T0 for optimized structures -- 7. Longitudinal Spatial Hole Burning -- 7.1. Rate equations -- 7.2. Multimode generation threshold -- 8. Conclusions -- References -- Applications of Quantum Dots in Semiconductor Lasers -- 1. INTRODUCTION -- 2. GROWTH OF QUANTUM DOTS -- 2.1. General -- 2.2. Growth fundamentals of QDs -- 2.3. Long-wavelength emission in structures with vertically-coupled QDs -- 2.4. Long-wavelength emission in QDs formed by activated alloy phase separation -- 2.5. Defects in long-wavelength QDs and defect reduction techniques -- 2.6. Long-wavelength emission from wavelength InGaAsN insertions in a GaAs matrix -- 3. INJECTION LASERS BASED ON QUANTUM DOTS -- 3.1. QD lasers -- 3.2. Long wavelength QD VCSELs -- 4. COMPARISON OF THE PERFORMANCE OF LONG-WAVELENGTH LASERS OBTAINED USING DIFFERENT TECHNIQUES -- 4.1. Competitors -- 4.2. Comparison of process technologies material systems and device performance in the work of different authors -- 5. CONCLUSION -- REFERENCES.