Materials For High-Temperature Semiconductor Devices -- Copyright -- Abstract -- Preface -- Acknowledgements -- Contents -- Executive Summary -- GENERAL CONCLUSIONS AND RECOMMENDATIONS -- Temperature Ranges -- U.S. Competitiveness -- Demonstration Technologies -- Funding Strategy -- MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS -- Silicon Carbide -- Nitrides -- Diamond -- Packaging -- 1 Background -- SURVEY I: APPLICATIONS OF HIGH-TEMPERATURE ELECTRONICS BY INDUSTRY -- Automotive -- Aerospace -- Gas Turbine Engines -- Other Aerospace Applications -- Space Vehicles And Exploration -- Nuclear Power -- Petroleum Exploration -- Industrial Process Control -- Power Electronics -- SURVEY II: APPLICATIONS BY THERMAL ENVIRONMENT -- SURVEY III: HIGH-TEMPERATURE ELECTORNIS APPLICATIONS BY COMPLEXITY -- SUMMARY -- 2 State Of The Art Of Wide Bandgap Materials -- SILICON CARBIDE -- Materials Description And Properties -- Methods Of Fabrication -- Bulk Growth -- Background -- Current Status -- Epitaxial Growth -- Background -- CVD Of α-SiC Epitaxial Films -- SiC Epitaxy In The c-Axis Direction -- SiC Epitaxy In The a-Axis Direction -- Hetero-Epitaxial Growth Of 3C-SiC Films -- Other Epitaxial Processes -- Summary -- NITRIDE MATERIALS -- Properties -- Crystal Growth -- DIAMOND -- Materials Description And Properties -- Methods Of Synthesis And Characterization -- Synthesis -- Characterization -- Diamond Processing -- 3 Device Physics: Behavior at Elevated Temperatures -- HIGH-TEMPERATURE EFFECTS: FUNDAMENTAL, MATERIALS-RELATED PROPERTIES -- Carrier Mobilities -- Intrinsic Carrier Concentrations: Dependence on Bandgap Energy and Temperature -- PREDICTING HIGH-TEMPERATURE-DEVICE PERFORMANCE: MATERIALS-RELATED FIGURES OF MERIT -- Device Physics At High Temperatures -- Junction Leakage: p-n Junctions And Diodes -- Schottky Leakage -- Threshold Voltage Shifts.

Choice Of High-Temperature-Device Technologies -- 4 Generic Technical Issues Associated With Materials For High-Temperature Semiconductors -- ELECTRICAL CONTACTS -- Schottky Contacts To SiC -- Ohmic Contacts To SiC -- Ohmic Contacts To GaN -- DOPING AND IMPLANTATION -- Doping Of SiC -- Doping Of GaN -- Doping Of AlN -- Doping Of Diamond -- GATE OXIDES AND INSULATORS -- Gate Oxides And Insulators For SiC -- Gate Oxides And Insulators For The Nitrides -- Gate Oxides And Insulators For Diamond -- ETCHING -- Etching Of SiC -- Etching Of The Nitrides: GaN And AlN -- Etching Of Diamond -- DEFECT ENGINEERING AND CONTROL -- YIELD -- DEVICE RELIABILITY -- 5 High-Temperature Electronic Packaging -- CHIP PACKAGING -- SUBSTRATES -- THICK-FILM AND THIN-FILM METALLIZATION -- COMPONENT ATTACHMENT -- INTERCONNECTION -- SECOND-LEVEL PACKAGING -- SUMMARY -- 6 Device Testing For High-Temperature Electronic Materials -- SHORT-TERM CONSTANT-TEMPERATURE TESTS -- CONSTANT-TEMPERATURE LIFE TEST -- THERMAL-CYCLING TESTS -- FUTURE REQUIREMENTS FOR HIGH-TEMPERATURE TESTING -- 7 Conclusions And Recommendations -- GENERAL CONCLUSIONS AND RECOMMENDATIONS -- Temperature Ranges -- U.S. Competitiveness -- Demonstration Technologies -- Funding Strategy -- MATERIALS-SPECIFIC CONCLUSIONS AND RECOMMENDATIONS -- Silicon Carbide -- Nitrides -- Diamond -- Packaging -- References -- Appendix A: Silicon As A High-Temperature Material -- HIGH-TEMPERATURE OPERATION OF SILICON CIRCUITS -- Bipolar Analog Circuits -- Bipolar Digital Circuits -- FET Analog Circuits -- Digital Cmos -- DIELECTRIC ISOLATION TECHNOLOGY -- Wafer Bonding -- SIMOX -- Lateral Isolation -- APPLICATIONS TO DEVICE TECHNOLOGY -- Bipolar-Junction-Transistor Applications In SOI Technology -- Cmos Applications In SOI -- REFERENCES -- Appendix B: Gallium Arsenide As A High-Temperature Material.

STATUS OF COMMERCIAL VLSI GAAS DEVICES FOR HIGH-TEMPERATURE ELECTRONICS -- APPROACHES FOR IMPROVING GAAS IC HIGH-TEMPERATURE LIMITS -- CONCLUSIONS -- REFERENCES -- Appendix C: High-Temperature Microwave Devices -- BASIC DEVICE TYPES -- Bipolar Junction Transistors -- Static Induction Transistors -- Junction Field Effect Transistors -- Metal-Semiconductor Field Effect Transistors -- Impact Avalanche Transit-Time Diodes -- EXPECTATIONS FOR WIDE BANDGAP MESFETS -- Current-Voltage Curves -- Power And Efficiency -- Mesfet Gain -- Thermal Properties Of SiC MESFETs -- Wide Bandgap Mesfets At Elevated Temperatures -- Silicon Carbide -- Gallium Nitride -- Diamond -- REFERENCES -- Appendix D: Biographical Sketches Of Committee Members.