Tunneling Field Effect Transistor Technology
Title:
Tunneling Field Effect Transistor Technology
Author:
Zhang, Lining. editor.
ISBN:
9783319316536
Physical Description:
IX, 213 p. 147 illus., 122 illus. in color. online resource.
Contents:
Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.
Abstract:
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
Subject Term:
Added Corporate Author:
Electronic Access:
https://doi.org/10.1007/978-3-319-31653-6