SOLUTION PROCESSING OF INORGANIC MATERIALS -- CONTENTS -- Preface -- Contributors -- 1. Introduction to Solution-Deposited Inorganic Electronics -- 1.1 Background and Motivation -- 1.1.1 Electronics Technologies -- 1.1.2 Commercial Macroelectronic Technology -- 1.1.3 Macroelectronics Potential -- 1.2 Importance of Solution Processing -- 1.3 Application Challenges: TFT Devices and Circuits -- 1.3.1 TFT Device Fundamentals -- 1.3.2 Next-Generation TFTs -- 1.3.3 Technology for RF TFTs -- 1.3.4 Exploratory TFT Concepts -- 1.3.5 Technology Computer Aided Design for TFTs -- 1.4 Application Challenges: Optoelectronics -- 1.4.1 Photovoltaics -- 1.4.2 Transparent Conductive Oxides -- 1.4.3 Transparent Transistors -- 1.4.4 Light-Emitting Diodes -- 1.4.5 Solid-State Lighting -- 1.4.6 Si-Based Integrated Emitters -- 1.5 Application Challenges: Power Sources, Sensors, and Actuators -- 1.6 Conclusions -- References -- 2. Chemical Solution Deposition-Basic Principles -- 2.1 Introduction -- 2.2 Substrate Surface Preparation -- 2.3 Starting Reagents and Solvents -- 2.3.1 Background -- 2.3.2 Starting Reagents -- 2.3.3 Solvents -- 2.4 Precursor Solution Preparation and Characteristics -- 2.4.1 Background -- 2.4.2 Sol-Gel Processes -- 2.4.3 Chelate Processes -- 2.4.4 MOD Solution Synthesis -- 2.4.5 Solution Preparation Summary -- 2.4.6 Other Processing Routes -- 2.5 Film Formation Behavior -- 2.5.1 Background -- 2.5.2 Spin Coating -- 2.5.3 Dip Coating -- 2.5.4 Spray Coating -- 2.5.5 Stamping and Microcontact Printing -- 2.6 Structural Evolution: Film Formation, Densification, and Crystallization -- 2.6.1 Background -- 2.6.2 Film Formation -- 2.6.3 Densification and Crystallization -- 2.7 Summary -- References -- 3. Solution Processing of Chalcogenide Semiconductors via Dimensional Reduction -- 3.1 Introduction -- 3.2 Dimensional Reduction.

3.3 Hydrazine Precursor Route -- 3.3.1 SnSe(2-x)S(x) Films -- 3.3.2 In(2)Se(3) Films -- 3.3.3 CuInTe(2), CuInSe(2), and Cu(Ga(1-x)In(x))Se(2) Films -- 3.3.4 Cu(2)S Precursor -- 3.3.5 KSb(5)S(8) Films -- 3.3.6 Other Metal Chalcogenide Systems -- 3.4 Similar Approaches without Hydrazine -- 3.5 Future Prospects -- References -- 4. Oxide Dielectric Films for Active Electronics -- 4.1 Introduction -- 4.2 Gate Dielectric Materials Selection -- 4.3 Producing High-Quality Films from Solution -- 4.4 HafSOx Thin-Film Dielectrics -- 4.5 AlPO Thin-Film Dielectric -- 4.6 Compositionally Graded and Laminated Structures -- 4.7 Summary and Perspective -- References -- 5. Liquid Silicon Materials -- 5.1 Introduction -- 5.2 Liquid Silicon Material -- 5.3 Forming Silicon Films from the Liquid Silicon Materials -- 5.4 Fabrication of a TFT Using a Solution-Processed Silicon Film -- 5.5 Fabrication of TFT Using Inkjet-Printed Silicon Film -- 5.6 Forming SiO(2) Films from the Liquid Silicon Materials -- 5.7 LTPS Fabrication Using Solution-Processed SiO(2) Films -- 5.8 Forming Doped Silicon Films -- 5.9 Conclusions -- Acknowledgments -- References -- 6. Spray CVD of Single-Source Precursors for Chalcopyrite I-III-VI(2) Thin-Film Materials -- 6.1 Introduction -- 6.2 Single-Source Precursor Studies -- 6.2.1 Background -- 6.2.2 Chemical Synthesis of SSPs -- 6.2.3 Thermal Analysis and Characterization of SSPs -- 6.2.4 Preparation of I-III-VI(2) Powders from SSPs -- 6.3 Spray or Atmosphere-Assisted CVD Processing -- 6.3.1 AACVD Reactor Design -- 6.3.2 Preliminary Thin-Film Deposition Studies -- 6.3.3 Impact of Reactor Design on CuInS(2) Film Growth -- 6.4 Atmospheric Pressure Hot-Wall Reactor Parametric Study -- 6.4.1 Parametric Study Approach -- 6.4.2 Variation of Deposition Temperature -- 6.4.3 Variation of Susceptor Location and Precursor Concentration.

6.4.4 Postdeposition Annealing -- 6.4.5 Photoluminescence Studies -- 6.5 Fabrication and Testing of CIS Solar Cells -- 6.5.1 Cell Fabrication at GRC -- 6.5.2 Cross-Fabrication of Solar Cells -- 6.5.3 Solar Cell Characterization -- 6.6 Concluding Remarks -- 6.6.1 Summary -- 6.6.2 Outlook and Future Work -- Acknowledgments -- References -- 7. Chemical Bath Deposition, Electrodeposition, and Electroless Deposition of Semiconductors, Superconductors, and Oxide Materials -- 7.1 Introduction -- 7.2 Chemical Bath Deposition -- 7.2.1 CdS Deposition -- 7.2.2 ZnS(O,OH) Deposition -- 7.2.3 Cd(1-x)Zn(x)S Deposition -- 7.2.4 Other Systems -- 7.3 Deposition of CIGS by Electrodeposition and Electroless Deposition -- 7.3.1 Electrodeposition of CIGS -- 7.3.2 Electroless Deposition of CIGS -- 7.4 Electrodeposition of Oxide Superconductors -- 7.4.1 Electrodeposition of Tl-Bi-Sr-Ba-Ca-Cu-O -- 7.4.2 Electrodeposition of Bi-Sr-Ca-Cu-O -- 7.5 Electrodeposition of Cerium Oxide Films -- 7.6 Electrodeposition of Gd(2)Zr(2)O(7) -- References -- 8. Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution-Phase Deposition Techniques -- 8.1 Introduction -- 8.2 SILAR -- 8.2.1 Basic Principles of SILAR -- 8.2.2 Advantages and Disadvantages of SILAR -- 8.2.3 SILAR Deposition Equipment -- 8.2.4 Mechanism of Film Growth in SILAR -- 8.3 Materials Grown by SILAR -- 8.3.1 Oxide Films -- 8.3.2 Chalcogenide Films -- 8.3.3 Films of Metals and Other Materials -- 8.4 ILGAR -- 8.4.1 Basic Principles of ILGAR -- 8.4.2 Materials Grown by ILGAR -- 8.5 ECALE -- 8.5.1 Basic Principles of ECALE -- 8.5.2 Materials Grown by ECALE -- 8.6 Other Sequential Solution-Phase Deposition Techniques -- References -- 9. Evaporation-Induced Self-Assembly for the Preparation of Porous Metal Oxide Films -- 9.1 Introduction -- 9.2 The EISA Process.

9.3 Characterization of Self-Assembled Films -- 9.3.1 Positron Annihilation Lifetime Spectroscopy (PALS) -- 9.3.2 Gas Physisorption -- 9.3.3 Small-Angle X-Ray Scattering (SAXS) -- 9.4 Generation of Mesoporous Crystalline Metal Oxide Films Via Evaporation-Induced Self-Assembly -- 9.5 Electronic Applications -- 9.5.1 Mesoporous Films with Insulating Framework -- 9.5.2 Mesoporous Films with a Semiconducting Framework -- 9.6 Mesoporous Films in Dye-Sensitized Solar Cells -- 9.7 Conclusions -- References -- 10. Engineered Nanomaterials as Soluble Precursors for Inorganic Films -- 10.1 Introduction -- 10.2 Synthesis of Inorganic Nanomaterials -- 10.3 Nanoparticles as Soluble Building Blocks for Inorganic Films -- 10.3.1 Sintering Metal and Semiconductor Nanoparticles into Continuous Polycrystalline Films -- 10.3.2 Electronic Materials Based on Nanoparticle Assemblies -- 10.3.3 Multicomponent Nanoparticle Assemblies -- 10.4 Films and Arrays of Inorganic Nanowires -- 10.5 Applications Using Networks and Arrays of Carbon Nanotubes -- 10.6 Concluding Remarks -- Acknowledgments -- References -- 11. Functional Structures Assembled from Nanoscale Building Blocks -- 11.1 Introduction -- 11.2 Building Blocks: Synthesis and Properties -- 11.3 Hierarchical Assembly of Nanowires -- 11.3.1 Fluidic Flow-Directed Assembly -- 11.3.2 Langmuir-Blodgett Technique-Assisted NW Assembly -- 11.4 Nanowire Electronics and Optoelectronics -- 11.4.1 Crossed Nanowire Devices -- 11.4.2 Nanoscale Logic Gates and Computational Circuits -- 11.4.3 Nanoscale Optoelectronics -- 11.5 Nanowire Thin-Film Electronics-Concept and Performance -- 11.5.1 p-Si Nanowire Thin-Film Transistors -- 11.5.2 High-Speed Integrated Si NW-TFT Circuits -- 11.5.3 3D Integrated Functional Electronic System -- 11.6 Summary and Perspective -- References -- 12. Patterning Techniques for Solution Deposition.

12.1 Introduction -- 12.2 Opportunities for Printable Inorganic verses Organic Materials Systems -- 12.3 Printing and the Microelectronics Industry-Present and Future -- 12.4 Printed Electronics Value Chain -- 12.5 Electrically Functional Inks -- 12.6 Printing Technologies -- 12.6.1 Contact Printing -- 12.6.2 Noncontact Printing-Ink Jet -- 12.6.3 Functional Inks for Ink Jet -- 12.7 Structure of a Printed Transistor -- 12.8 Patterning Techniques for Solution Deposition: Technology Diffusion -- 12.8.1 Standards -- 12.8.2 Awareness -- 12.8.3 Roadmapping for Supply Chain Development -- 12.8.4 Quality Control/Assurance -- 12.9 Conclusions -- References -- 13. Transfer Printing Techniques and Inorganic Single-Crystalline Materials for Flexible and Stretchable Electronics -- 13.1 Introduction -- 13.2 Inorganic Single-Crystalline Semiconductor Materials for Flexible Electronics -- 13.3 Transfer Printing Using an Elastomer Stamp -- 13.3.1 Surface Chemistry -- 13.3.2 Thin-Film Adhesives -- 13.3.3 Kinetic Effects -- 13.3.4 Stress Concentration and Fracture -- 13.3.5 Carrier Films and Carbon Nanotubes -- 13.3.6 Machines for Transfer Printing -- 13.4 Flexible Thin-Film Transistors that Use µs-Sc on Plastic -- 13.5 Integrated Circuits on Plastic -- 13.5.1 Two-Dimensional Integration -- 13.5.2 Three-Dimensional and Heterogeneous Integration -- 13.6 µs-Sc Electronics on Rubber -- 13.7 Conclusion -- References -- 14. Future Directions for Solution-Based Processing of Inorganic Materials -- 14.1 Introduction -- 14.2 Materials -- 14.2.1 Semiconductors -- 14.2.2 Oxides -- 14.2.3 Metals -- 14.3 Deposition Approaches -- 14.4 Next Generation of Applications -- 14.4.1 New Solar Cells: Quantum Dot (QD) Structures and Multiple Exciton Generation (MEG) -- 14.4.2 Organic-Inorganic Hybrids -- 14.4.3 Non Linear Optics -- 14.4.4 3D-Structures.

14.4.5 Catalysis/Artificial Photosynthesis.