CONTENTS -- PREFACE -- PART 1 FUNDAMENTALS -- 1 . PHYSICAL PROPERTIES -- 1.1 INTRODUCTION -- 1.2 COMPOUND SEMICONDUCTORS -- 1.3 CRYSTAL STRUCTURE -- 1.4 BAND STRUCTURES. BAND GAPS AND LATTICE CONSTANTS -- 1.5 OPTICAL PROPERTIES -- 1.6 ELECTRICAL PROPERTIES -- 1.6.1 Carrier Concentration -- 1.6.2 Mobility -- 1.6.3 High Field Properties -- 1.7 OTHER PROPERTIES -- 1.7.1 General Properties -- 1.7.2 Stacking Fault Energy -- 1.7.3 Critical Resolved Shear Stress -- REFERENCES -- 2 . CRYSTAL GROWTH METHODS -- 2.1 INTRODUCTION -- 2.2 MELT GROWTH METHODS -- 2.2.1 Horizontal Boat Growth Methods -- 2.2.2 Vertical Boat Growth Methods -- 2.2.3 Pulling Methods -- 2.2.4 Floating Zone (FZ) Method -- 2.2.5 Other Methods -- 2.3 SOLUTION GROWTH METHODS -- 2.3.1 Simple Solution Growth Method -- 2.3.2 Traveling Heater Method (THM) -- 2.3.3 Solute Solution Diffusion (SSD) Method -- 2.3.4 Solvent Evaporation (SE) Method -- 2.3.5 Temperature Difference Method under Controlled Vapor Pressure (TDM- CVP) -- 2.3.6 Hydrothermal Synthesis Method -- 2.4 VAPOR PHASE GROWTH METHOD -- 2.4.1 Direct Synthesis (DS) Method -- 2.4.2 Physical Vapor Transport (PVT) Method -- 2.4.3 Chemical Vapor Transport (CVT) Method -- 2.4.4 Solid Phase Reaction (Solid State Recrystallization) -- 2.5 MODIFICATION OF CRYSTAL GROWTH METHODS -- 2.5.1 In-Situ Synthesis -- 2.5.2 Vapor Pressure Control -- 2.5.3 Magnetic Field Application -- 2.5.4 Accelerated Crucible Rotation Technique (ACRT) -- REFERENCES -- 3 . PRINCIPLES OF CRYSTAL GROWTH -- 3.1 INTRODUCTION -- 3.2 PHASE DIAGRAM -- 3.3 CONVECTION -- 3.3.1 Gas Convection -- 3.3.2 Melt Convection -- 3.3.3 Instability of Melt Convection -- 3.3.4 Fluid Flow and CrystaUMelt Interface Shape -- 3.4 MAGNETIC FIELD APPLICATION -- 3.5 TEMPERATURE DISTRIBUTION AND THERMAL STRESS -- 3.6 SEGREGATION AND SUPERCOOLING -- 3.6.1 Segregation.

3.6.2 Constitutional Supercooling -- 3.7 DIAMETER CONTROL SYSTEM -- REFERENCES -- 4 . DEFECTS -- 4.1 INTRODUCTION -- 4.2 POINT DEFECTS -- 4.2.1 Various Point Defects -- 4.2.2 Thermodynamics of Point Defects -- 4.2.3 Diffusion Constants -- 4.2.4 Non-stoichiometry -- 4.2.5 Self Compensation -- 4.2.6 Defect Control -- 4.3 DISLOCATIONS -- 4.3.1 Fundamentals of Dislocations -- 4.3.2 Thermal Stress and Dislocations -- 4.3.3 Necking -- 4.3.4 Impurity Hardening -- 4.3.5 Lineages and Low Angle Grain Boundaries -- 4.4 STACKING FAULT DEFECTS AND TWINS -- 4.5 FACETS AND STRIATIONS -- 4.6 PRECIPITATES, INCLUSIONS AND VOIDS -- REFERENCES -- 5 . CHARACTERIZATION -- 5.1 INTRODUCTION -- 5.2 X-RAY DIFFRACTION -- 5.2.1 Orientation Determination -- 5.2.2 Multiple Crystal X-ray Diffraction -- 5.2.3 X-ray Diffraction Topography -- 5.3 ELECTRON IRRADIATION -- 5.3.1 Electron Microscopy (TEM) -- 5.3.2 Electron Beam Induced Current (EBIC) -- 5.4 OPTICAL CHARACTERIZATION -- 5.4.1 Photoluminescence (PL) -- 5.4.2 Scanning photoluminescence (SPL) -- 5.4.3 Cathodoluminescence (CL) -- 5.4.4 IR Transmission Micrography -- 5.4.5 IR Scattering Tomography -- 5.4.6 Laser Scattering -- 5.5 ELECTRICAL PROPERTIES -- 5.5.1 Hall Measurement -- 5.5.2 C-V Measurement -- 5.5.3 Transient Spectroscopies -- 5.5.4 Three Guard Electrode Method -- 5.6 IMPURITY AND COMPOSITION ANALYSIS -- 5.6.1 Solid Source Mass Spectroscopy (SSMS) -- 5.6.2 Secondary Ion Mass Spectroscopy (SIMS) and Ion Micro Analyzer (IM-4) -- 5.6.3 Glow Discharge Mass Spectroscopy (GDMS) -- 5.6.4 Fourier Transform Infrared (FT-IR) Spectroscopy -- 5.6.5 Chemical Analysis -- 5.6.6 Stoichiometry Analysis -- REFERENCES -- 6 . APPLICATIONS -- 6.1 INTRODUCTION -- 6.2 PHOTONIC DEVICES -- 6.2.1 Laser diodes -- 6.2.2 Light Emitting Diodes (LEDs) -- 6.2.3 Photodetectors -- 6.3 ELECTRONIC DEVICES.

6.3.1 Metal-Semiconductor Field Effect Transistor (MESFET) -- 6.3.2 IGFET (Insulating Gate FET)/MISFET(Metal-Insulator-Semiconductor FET )/MOSFET(Metal-Oxide-Semiconductor PET) -- 6.3.3 Junction Field Effect Transistor (JFET) -- 6.3.4 High Electron Mobility Transistor (HEMT) -- 6.3.5 Hetero Bipolar Transistor (HBT) -- 6.3.6 Gunn Diodes -- 6.3.7 Integrated Circuits (ICs) -- 6.3.8 Power Devices -- 6.4 SOLAR CELLS -- 6.5 FUNCTIONAL DEVICES -- 6.5.1 Radiation Detectors -- 6.5.2 Magnetic sensors -- REFERENCES -- PART 2 111-V Materials -- 7 . GaP -- 7.1 INTRODUCTION -- 7.2 PHYSICAL PROPERTIES -- 7.3 CRYSTAL GROWTH -- 7.3.1 Polycrystal Synthesis -- 7.3.2 Single Crystal Growth -- 7.3.3 Reduction of Dislocation Densities -- 7.4 CHARACTERIZATION -- 7.4.1 Purity -- 7.4.2 Defects -- 7.4.3 Electrical Properties -- 7.4.4 Optical Properties -- 7.5 APPLICATIONS -- REFERENCES -- 8 . GaAs -- 8.1 INTRODUCTION -- 8.2 PHYSICAL PROPERTIES -- 8.3 CRYSTAL GROWTH -- 8.3.1 Horizontal Boat Growth Methods -- 8.3.2 Liquid Encapsulated Czochralski (LEC) Method -- 8.3.3 Vertical Boat Growth Methods -- 8.3.4 Other Methods -- 8.4 POST-GROWTH ANNEALING -- 8.4.1 Ingot Annealing -- 8.4.2 Wafer Annealing -- 8.5 PURITY -- 8.5.1 Carbon -- 8.5.2 Boron -- 8.5.3 Oxygen -- 8.5.4 Others Impurities -- 8.6 DEFECTS -- 8.6.1 Dislocations -- 8.6.2 Residual Stress -- 8.6.3 Lineages -- 8.6.4 Striations -- 8.6.5 Precipitates -- 8.6.6 Non-stoichiometry -- 8.6.7 Native Defects and Deep Levels -- 8.7 ELECTRICAL PROPERTIES -- 8.7.1 Doping, Carrier Concentration and Mobility -- 8.7.2 Semi-Insulating (SI) GaAs -- 8.7.3 Measurement of Uniformity of Electrical Properties -- 8.7.4 Control of Electrical Properties -- 8.8 OPTICAL CHARACTERIZATION -- 8.8.1 Photoluminescence (PL) -- 8.8.2 Cathodoluminescence (CL) -- 8.8.3 Others -- 8.9 DEVICE PROPERTIES -- 8.9.1 Thermal Stability -- 8.9.2 Activation efficiency.

8.9.3 Threshold Voltage (Vth) and its Variation -- 8.9.4 Device Yield -- REFERENCES -- 9 . GaSb -- 9.1 INTRODUCTION -- 9.2 PHYSICAL PROPERTIES -- 9.3 CRYSTAL GROWTH -- 9.3.1 Solution Growth -- 9.3.2 Melt Growth -- 9.3.3 Vapor Phase Growth -- 9.3.4 Doping -- 9.4 CHARACTERIZATION -- 9.4.1 Purity -- 9.4.2 Defects -- 9.4.3 Electrical Properties -- 9.4.4 Optical Properties -- 9.5 APPLICATIONS -- 9.5.1 Photonic Devices -- 9.5.2 Electronic Devices -- 9.5.3 Solar Cells -- 9.5.4 Thermophotovoltaic (TPV) Generators -- REFERENCES -- 10 . InP -- 10.1 INTRODUCTION -- 10.2 PHYSICAL PROPERTIES -- 10.3. CRYSTAL GROWTH -- 10.3.1 Polycrystal Synthesis -- 10.3.2 Single Crystal Growth -- 10.3.3 Prevention of Twinning -- 10.3.4 Reduction of Dislocation Densities -- 10.3.5 Crystal Growth with Various Dopants -- 10.4 CHARACTERIZATION -- 1 0.4.1 Purity -- 10.4.2 Defects -- 10.4.3 Electrical Properties -- 10.4.4 Optical Properties -- 10.5 APPLICATIONS -- 10.5.1 Substrates for Epitaxy -- 10.5.2 Optoelectronic Devices -- 10.5.3 High Frequency Devices -- 10.5.4 Solar Cells -- REFERENCES -- 11 . InAs -- 11.1 INTRODUCTION -- 11.2 PHYSICAL PROPERTIES -- 11.3 CRYSTAL GROWTH -- 11.3.1 Melt Growth -- 11.3.2 Solution Growth -- 11.3.3 Vapor Phase Growth -- 11.4 CHARACTERIZATION -- 11.4.1 Purity -- 11.4.2 Defects -- 11.4.3 Electrical Properties -- 11.5 APPLICATIONS -- REFERENCES -- 12 . InSb -- 12.1 INTRODUCTION -- 12.2 PHYSICAL PROPERTIES -- 12.3 CRYSTAL GROWTH -- 12.3.1 Synthesis and Purification -- 12.3.2 Crystal growth -- 12.3.3 Doping -- 12.4 CHARACTERIZATION -- 12.4.1 Defects -- 12.4.2 Electrical Properties -- 12.5 APPLICATIONS -- 12.5.1 Optical Devices -- 12.5.2 Electronic Devices -- 12.5.3 Sensors and Others -- REFERENCES -- PART 3 11- V I MATE RIALS -- 13 . CdS -- 13.1 INTRODUCTION -- 13.2 PHYSICAL PROPERTIES -- 13.3 CRYSTAL GROWTH -- 13.3.1 Melt Growth.

13.3.2 Solution Growth -- 13.3.3 Vapor Phase Growth -- 13.3.4 Other Methods -- 13.4 CHARACTERIZATION -- 13.4.1 Defects -- 13.4.2 Eilectrisal Electrical Properties -- 13.4.3 Optical Properties -- 13.5 APPLICATIONS -- REFERENCES -- 14 . CdSe -- 14.1 INTRODUCTION -- 14.2 PHYSICAL PROPERTIES -- 14.3 CRYSTAL GROWTH -- 14.3.1 Melt Growth -- 14.3.2 Solution Growth -- 14.3.3 Vapor Phase Growth -- 14.4 CHARACTERIZATION -- 14.5 APPLICATIONS -- REFERENCES -- 15 . CdTe -- 15.1 INTRODUCTION -- 15.2 PHYSICAL PROPERTIES -- 15.3 CRYSTAL GROWTH -- 15.3.1 Melt Growth -- 15.3.2 Solution Growth -- 15.3.3 Vapor Phase Growth -- 15.3.4 Segregation Coefficients -- 15.3.5 Impurity Hardening -- 15.4 CHARACTERIZATION -- 15.4.1 Purity -- 15.4.2 Defects -- 15.4.3 Electrical Properties -- 15.4.4 Optical Properties -- 15.5 APPLICATIONS -- 15.5.1 Far-Infrared Detectors -- 15.5.2 Radiation Detectors -- 15.5.3 Ssllaar Cells -- 15.5.4 Electro-Optic Modulators -- 15.5.5 Infrared Windows -- 15.5.6 Photorefractive Materials -- REFERENCES -- 16 . ZnS -- 16.1 INTRODUCTION -- 16.2 PHYSICAL PROPERTIES -- 16.3 CRYSTAL GROWTH -- 16.3.1 Melt Growth -- 16.3.2 Solution Growth -- 16.3.3 Vapor Phase Growth -- 16.3.4 Other Methods -- 16.4 CHARACTERIZATION -- 16.4.1 Defects -- 16.4.2 Electrical Properties -- 16.4.3 Optical Properties -- 16.5 APPLICATIONS -- 16.5.1 Light Emitting Diodes (LEDs) -- 16.5.2 EL Emitting Devices -- 16.5.3 Tunable Lasers -- REFERENCES -- 17 . ZnSe -- 17.1 INTRODUCTION -- 17.2 PHYSICAL PROPERTIES -- 17.3 CRYSTAL GROWTH -- 17.3.1 Melt Growth -- 17.3.2 Solution Growth -- 17.3.3 Vapor Phase Growth -- 17.3.4 Solid State Recrystallization -- 17.4 CHARACTERIZATION -- 17.4.1 Defects -- 17.4.2 Electrical Properties -- 17.4.3 Optical Properties -- 17.5 APPLICATIONS -- 17.5.1 Lasers -- 17.5.2 Light Emitting Diodes (LEDs) -- REFERENCES -- 18 . ZnTe -- 18.1 INTRODUCTION.

18.2 PHYSICAL PROPERTIES.