Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Title:
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Author:
Bureau-Oxton, Chloé
Personal Author:
Publication Information:
Cambridge, MA MyJoVE Corp 2016
Physical Description:
online resource (947 seconds)
Series:
Engineering
General Note:
Title from resource description page
Abstract:
This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.
Reading Level:
For undergraduate, graduate, and professional students
Subject Term:
Electronic Access:
https://www.jove.com/t/50581