Physics and Modeling of Tera- and Nano-Devices.
Title:
Physics and Modeling of Tera- and Nano-Devices.
Author:
Ryzhii, Maxim.
ISBN:
9789812779052
Personal Author:
Physical Description:
1 online resource (194 pages)
Series:
Selected Topics in Electronics and Systems ; v.47
Selected Topics in Electronics and Systems
Contents:
CONTENTS -- Preface -- Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey -- 1. Introduction -- 2. Discrete Impurity Scattering Effects -- 3. Ballistic Transport in Nano-Devices -- 4. Nanowire Devices -- 5. Conclusions -- References -- Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova -- 1. Introduction -- 2. Junction with Isotropic Semiconductor -- 3. Surface Long Range Polarons in Molecular Crystals -- 4. Junction with Conducting Polymer -- 5. Conclusions -- References -- Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti -- 1. Introduction -- 2. Cellular Monte Carlo Method -- 3. High Field Transport -- 4. CMC Device Modeling -- 4.1. SOI and GOI MOSFETs -- 4.2. AlGaN/GaN HFETs -- Acknowledgments -- References -- Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina -- 1. Introduction -- 2. The Physical Model -- 3. Numerical Methods -- 3.1. Particle Generation -- 3.2. Particle Annihilation -- 3.3. Coupling to the Poisson Equation -- 4. Results -- 5 . Discussion -- 5.1. Interpretation of the Results -- 5.2. The Bound-states Problem -- 6. Conclusions -- Acknowledgment -- References -- Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram -- 1. Introduction -- 2. Nanoscale Device Simulation: Quantum Effects -- 3. Community Nanoscale MOSFET Softwares -- 3.1 nanoFET -- 3.2 nanoMOS -- 3.3 QuaMC -- 4. Simulation Results and Discussion -- 5. Conclusion -- Acknowledgments -- References.
Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama -- 1. Introduction -- 2. Experiment -- 3. Results and discussion -- 4. Conclusion -- Acknowledgments -- References -- Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov -- 1. Introduction -- 2. Statistical Device Simulation -- 3. Impact of Intrinsic Parameter Fluctuations on Circuits -- 3.1. Impact of RDF on 6-TSMM Cells -- 4. Conclusions -- Acknowledgments -- References -- HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji -- 1. Introduction -- 2. Present Status of Millimeter-Wave MMICs -- 3. Problems in Nanometer-Scale HEMTs -- 4. Plasmon Resonant Photomixer -- 5. Conclusions -- Acknowledgments -- References -- Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur -- 1. Introduction -- 2. Plasma Waves and Oscillations in 2DEG Channels -- 3. Plasma Instabilities -- 4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations -- 5. Resonant Photomixing Using Plasma Oscillations -- 6. Plasma Waves in Graphene-Based Heterostructures -- 7. Conclusions -- Acknowledgments -- References -- Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode A . Satou, V. Ryzhii, T. Otsuji and M. S. Shur -- 1. Introduction -- 2. Theory -- 3. Results and Discussion -- 4. Conclusions -- Acknowledgments -- References -- Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons T . Nishimura and T. Otsuji -- 1. Introduction -- 2. Plasmon Resonant Terahertz Emitter -- 3. Simulation -- 4. Device Model -- 5. Results and Discussion.
6. Conclusions -- Acknowledgments -- References -- Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays V. V. Popov, M. S. Shur, G. M. Tsymbalov and D. V. Fateev -- 1. Introduction -- 2. Theoretical Approach -- 3. Grating-Gate FET with a Common Channel -- 4. FET Array with Separate 2D Electron Channels -- 5. Conclusions -- Acknowledgments -- References -- Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots Y. Kawano, T. Fuse and K. Ishibashi -- 1. Introduction -- 2. Experimental Setup -- 3. Experimental Results -- 4. Discussion and Remark -- 5. Summary -- Acknowledgments -- References -- Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses A . Gladun, V. Leiman, A. Arsenin, 0. Mannoun and V. Tarakanov -- 1. Introduction -- 2. Equations of the Model and Results of Numerical Simulation -- 3. Conclusions -- Acknowledgments -- References -- Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line K. Narahara, T. Yamaki, T. Takahashi and T. Nakamichi -- 1. Introduction -- 2. Characteristics of Idealized RTD Lines -- 3. Numerical Results -- 4. Conclusions -- Acknowledgment -- References -- Infrared Quantum-Dot Detectors with Diffusion-Limited Capture N. Vagidov, A. Sergeev and V. Mitin -- 1. Introduction -- 2. Theoretical Model -- 3. Results of Monte-Carlo Simulations -- Acknowledgements -- References -- Magnetoresistance in Fe/MgO/Fe Magnetic Tunnel Junctions N. N. Beletskii, S. A. Borysenko, V. M. Yakovenko, G. P. Berman and S. A. Wolf -- 1. Introduction -- 2. Theoretical Model -- 3. Numerical Results -- 4. Conclusions -- Acknowledgment -- References -- Modeling and Implementation of Spin-Based Quantum Computation M. E. Hawley, G. W. Brown and G. P. Bemnan -- 1. Introduction -- 2. Quantum Computation.
3. Background - Silicon-Based Solid-state Quantum Computer -- 4. New SSQC Approach -- 5. Summary -- Acknowledgments -- References -- Quantum Engineering for Threat Reduction and Homeland Security G. P. Berman, A . R. Bishop and B. M. Chernobrod -- 1. Introduction -- 2. Dynamical Perturbation Theory for Scalable Solid-state Quantum Computation -- 3. Quantum Neural Devices -- 4. Quantum Annealing -- 5. Magnetic Memory Devices Based on Magnetic Tunneling Junctions -- 6. Terahertz Detector Based on Microcantilever as a Light Pressure Sensor -- 7. Bose-Einstein Condensate Based Interferometers -- 8. Quantum Microscopes with a Single-Spin Resolution -- 9. Suppression of Fluctuations in Free Space Optical Communication -- 10. Quantum Engineering with Heavy Nuclei: Connection with Electron Transport in Semiconductor Heterostructures -- Acknowledgments -- References -- Strong Phase Shift Mask Manufacturing Error Impact on the 65 nm Poly Line Printability N. Belova -- 1. Introduction and Motivation -- 2. Method and Analysis Flow -- 3. Results and Discussion -- 5. Conclusions -- Acknowledgements -- References.
Abstract:
Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book. Sample Chapter(s). Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (784 KB). Contents: Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (D K Ferry et al.); Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors (N Kirova); Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices (S M Goodnick & M Saraniti); Nanoelectronic Device Simulation Based on the Wigner Function Formalism (H Kosina); Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org (S Ahmed et al.); Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions (V T Renard et al.); Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems (S Roy et al.); HEMT-Based Nanometer Devices Toward Terahertz Era (E Sano & T Otsuji); Plasma Waves in Two-Dimensional Electron Systems and Their Applications (V Ryzhii et al.); Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode (A Satou et al.); Terahertz Polarization Controller Based on Electronic
Dispersion Control of 2D Plasmons (T Nishimura & T Otsuji); Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays (V V Popov et al.); Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots (Y Kawano et al.); Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses (A Gladun et al.); Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line (K Narahara et al.); Infrared Quantum-Dot Detectors with Diffusion-Limited Capture (N Vagidov et al.); Magnetoresistance in Fe/MgO/Fe Magentic Tunnel Junctions (N N Beleskii et al.); Modeling and Implementation of Spin-Based Quantum Computation (M E Hawley et al.); Quantum Engineering for Threat Reduction and Homeland Security (G P Berman et al.); Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability (N Belova). Readership: Academics, graduate and postgraduate students in the field of physics and modeling of novel electronics and optoelectronic devices.
Local Note:
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2017. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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