The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics -- Contents -- Foreword -- List of Contributors -- Chapter Introduction -- References -- Chapter 1 Quantum Dot Technologies -- 1.1 Motivation for Development of Quantum Dots -- 1.2 Gain and Quantum Confinement in a Semiconductor Laser -- 1.2.1 Top-Down Approach -- 1.2.2 Bottom-Up Approach -- 1.3 Self-Assembled Quantum Dot Technology -- 1.3.1 Molecular Beam Epitaxy -- 1.3.2 Growth Modes -- 1.3.3 Quantum Dot Growth Dynamics -- 1.3.3.1 The Interaction of the Quantum Dot and the Wetting Layer -- 1.3.3.2 The Interaction of the Quantum Dot with Underlying Layers and Capping Layers -- 1.3.3.3 Growth Interruption -- 1.3.3.4 Arsenic Pressure -- 1.3.3.5 Growth Temperature -- 1.3.3.6 Growth Rate and Material Coverage -- 1.3.4 Quantum Dot Growth Thermodynamic Processes -- 1.4 Physics and Device Properties of S-K Quantum Dots -- 1.4.1 Temperature Insensitivity -- 1.4.2 Low Threshold Current Density -- 1.4.3 Material Gain and Modal Gain -- 1.4.4 Broad Spectral Bandwidth Devices and Spectral Coverage -- 1.4.5 Ultrafast Gain Recovery -- 1.5 Extension of Emission Wavelength of GaAs-Based Quantum Dots -- 1.5.1 Short-Wavelength Quantum Dot Light Emission -- 1.5.1.1 InP/GaInP Quantum Dots -- 1.5.1.2 Type II InAlAs/AlGaAs Quantum Dots -- 1.5.2 Long-Wavelength QD Light Emission -- 1.5.2.1 Low Growth Temperature InAs/GaAs Quantum Dots -- 1.5.2.2 InAs QDs Grown on an InGaAs Metamorphic Layer -- 1.5.2.3 InGaAsSb Capped InAs/GaAs Quantum Dots and InGaNAs Capped InAs/GaAs Quantum Dots -- 1.5.2.4 Bilayer InAs/GaAs QD Structures -- 1.5.2.5 Asymmetric Dot in WELL QD Structure -- 1.6 Future Prospects -- Acknowledgments -- References -- Chapter 2 Ultra-Short-Pulse QD Edge-Emitting Lasers -- 2.1 Introduction -- 2.2 Simulations.

2.3 Broadly Tunable Frequency-Doubled EC-QD Lasers -- 2.4 Two-Section Monolithic Mode-Locked QD Lasers -- 2.4.1 Simultaneous GS and ES ML -- 2.4.2 QD Absorber Resistor-SEED Functionality -- 2.4.3 Pulse Width Narrowing due to GS Splitting -- 2.5 Tapered Monolithic Mode-Locked QD Lasers -- 2.5.1 High-Peak Power and Subpicosecond Pulse Generation -- 2.5.2 Suppression of Pulse Train Instabilities of Tapered QD-MLLs -- 2.6 QD-SOAs -- 2.6.1 Straight-Waveguide QD-SOAs -- 2.6.2 Tapered-Waveguide QD-SOAs -- 2.6.3 QD-SOA Noise -- 2.7 Pulsed EC-QD Lasers with Tapered QD-SOA -- 2.7.1 EC-MLQDL -- 2.7.2 EC-MLQDL with Postamplification by Tapered QD-SOA -- 2.7.3 Wavelength-Tunable EC-MLQDL with Tapered QD-SOA -- 2.8 Conclusion -- Acknowledgments -- References -- Chapter 3 Quantum Dot Semiconductor Disk Lasers -- 3.1 Introduction -- 3.2 General Concept of Semiconductor Disk Lasers -- 3.3 Toward Operation at the 1-1.3 μm Spectral Range -- 3.4 Quantum Dots Growth and Characterization -- 3.5 Quantum Dots for Laser Application: From Edge Emitters to Disk Lasers -- 3.6 Details of the Quantum Dot Gain Media for Disk Cavity -- 3.6.1 1040 nm Disk Gain Design -- 3.6.2 1180 nm Disk Gain Structure -- 3.6.3 1260 nm Disk Gain Structure -- 3.6.4 Gain Medium Characterization at the Wafer Level -- 3.7 Disk Laser Performance -- 3.7.1 Gain Chip Assembly and Thermal Management -- 3.7.2 1040 nm InGaAs Dot Disk Laser -- 3.7.3 1180 nm Disk Laser -- 3.7.4 1260 nm Quantum Dot Disk Laser -- 3.8 Tunable Quantum Dot Semiconductor Disk Laser -- 3.9 Second Harmonic Generation with Quantum Dot Disk Laser Cavity -- 3.9.1 Experimental Results -- 3.10 Disk Laser with Flip-Chip Design of the Gain Medium -- 3.10.1 Gain Structure Description -- 3.10.2 Experimental Results -- 3.11 Conclusions -- Acknowledgments -- References.

Chapter 4 Semiconductor Quantum-Dot Saturable Absorber Mirrors for Mode-Locking Solid-State Lasers -- 4.1 Scope of the Chapter -- 4.2 Introduction -- 4.3 Quantum-Well Saturable Absorbers: Overview -- 4.4 Quantum-Dot Saturable Absorbers: Basic Principles and Fabrication Technologies -- 4.5 Quantum-Dot Saturable Absorbers for Mode-Locking of Solid-State Lasers at 1 μm -- 4.5.1 QD-SAM Design and Characterization -- 4.5.2 QD-SAM Mode-Locked Yb:KYW Lasers -- 4.6 p-i-n Junction QD SESAMs and Their Applications -- 4.6.1 Cr:forsterite Laser Mode-Locked Using p-i-n QD SESAM -- 4.6.2 Nonlinear Reflectivity and Absorption Recovery Dynamics in p-i-n QD-SAM -- 4.7 InAs/GaAs QD-SAM for 10 GHz Repetition Rate Mode-Locked Laser at 1.55 μm -- 4.8 InP Quantum Dot Saturable Absorbers for Mode-Locking High-Repetition Rate Ti:sapphire Lasers -- 4.9 Conclusions -- Acknowledgments -- References -- Chapter 5 QD Ultrafast and Continuous Wavelength Laser Diodes for Applications in Biology and Medicine -- 5.1 Compact Laser Systems for Nonlinear Imaging Applications -- 5.1.1 Introduction -- 5.1.1.1 The Multimodal Microscope -- 5.1.2 Microscopy Workstation Preparation for Infrared Wavelengths -- 5.1.2.1 Long-Term Exposure Effects on Living Samples at 1550 nm -- 5.1.3 Quantum-Dot-Based Optically Pumped Vertical Extended Cavity Surface-Emitting Lasers for Nonlinear Imaging -- 5.1.3.1 The Compact Femtosecond Semiconductor Disk Laser System -- 5.1.3.2 Nonlinear Imaging Tests -- 5.1.4 Future Prospects: Edge-Emitting Laser Prototypes for Nonlinear Imaging -- 5.1.4.1 Ultra-Short Pulsed Semiconductor Edge-Emitting Lasers -- 5.1.5 Conclusions -- 5.2 QD Devices and Their Application in Optical Coherence Tomography -- 5.2.1 Overview of Optical Coherence Tomography -- 5.2.2 SLD Devices -- 5.2.3 Broadband Gain Material.

5.2.3.1 Use of QDs SLDs for Time-Domain OCT -- 5.2.4 Swept Lasers -- 5.2.5 The QD Swept Source Laser for OCT -- 5.2.6 Summary and Future Outlook -- 5.3 Infrared QD Laser Application in Cancer Photodynamic Therapy: Killing Tumor Cells without Photosensitizers -- 5.3.1 Introduction -- 5.3.2 Singlet Oxygen in Organic Solution -- 5.3.3 Laser-Induced 1O2 Production in Living Cells -- 5.3.4 Cytosolic Free Calcium Level and Ion Channel Activity under Laser Pulse -- 5.3.5 Laser-Triggered Cancer Cell Death -- 5.3.6 Conclusions and Future Perspectives -- Acknowledgments -- References -- Chapter 6 Conclusion and Future Perspectives -- Color Plates -- Index.