Contents -- Preface -- 1. Interactions of Charged Particles and Photons -- 1.1 Passage of Massive Charged Particles Through Matter -- 1.1.1 Collision-Loss Processes of Massive Charged Particles -- 1.1.1.1 Maximum Transferable Energy to Atomic Electrons -- 1.1.1.2 Bragg Curve and Peak -- 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise -- 1.1.1.4 Restricted Energy-Loss and Fermi Plateau -- 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss -- 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss -- 1.1.1.7 Nuclear Energy-Loss of Massive Particles -- 1.2 Collision and Radiation Energy-Losses of Electrons and Positrons -- 1.2.1 Collision Losses and the Most Probable Energy-Loss -- 1.2.2 Radiation Energy-Losses -- 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons -- 1.3.1 Scattering Cross Section of Electrons on Nuclei -- 1.3.1.1 Interpolated Expression for RMott -- 1.3.1.2 Screened Coulomb Potentials -- 1.3.1.3 Finite Nuclear Size -- 1.3.1.4 Finite Rest Mass of Target Nucleus -- 1.3.2 Nuclear Stopping Power of Electrons -- 1.3.3 Non-Ionizing Energy-Loss of Electrons -- 1.4 Interactions of Photons with Matter -- 1.4.1 Photoelectric Effect -- 1.4.2 Compton Effect -- 1.4.3 Pair Production -- 1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields -- 1.4.4 Absorption of Photons in Silicon -- 2. Physics and Properties of Silicon Semiconductor -- 2.1 Structure and Growth of Silicon Crystals -- 2.1.1 Imperfections and Defects in Crystals -- 2.2 Energy Band Structure and Energy Gap -- 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon -- 2.2.2 Effective Mass -- 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon -- 2.3 Carrier Concentration and Fermi Level -- 2.3.1 Effective Density-of-States -- 2.3.1.1 Degenerate and Non-Degenerate Semiconductors.

2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers -- 2.3.2 Donors and Acceptors -- 2.3.2.1 Extrinsic Semiconductors and Fermi Level -- 2.3.2.2 Compensated Semiconductors -- 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors -- 2.3.2.4 Quasi-Fermi Levels -- 2.3.3 Largely Doped and Degenerate Semiconductors -- 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors -- 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors -- 3. Transport Phenomena in Semiconductors -- 3.1 Thermal and Drift Motion in Semiconductors -- 3.1.1 Drift and Mobility -- 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations -- 3.1.2 Resistivity -- 3.2 Diffusion Mechanism -- 3.2.1 Einstein's Relationship -- 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors -- 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes -- 3.3.1.1 Bulk Processes in Direct Semiconductors -- 3.3.1.2 Bulk Processes in Indirect Semiconductors -- 3.3.1.3 Surface Recombination -- 3.3.1.4 Lifetime of Minority Carriers in Silicon -- 3.4 The Continuity Equations -- 3.4.1 The Dielectric Relaxation Time and Debye Length -- 3.4.2 Ambipolar Transport -- 3.4.3 Charge Migration and Field-Free Regions -- 3.4.3.1 Carrier Diffusion in Silicon Radiation Detectors -- 3.4.3.2 Measurement of Charge Migration in Silicon Radiation Detectors -- 3.5 Hall Effect in Silicon Semiconductors -- 4. Properties of the p-n Junctions of Silicon Radiation Devices -- 4.1 Standard Planar Float-Zone and MESA Silicon Detectors Technologies -- 4.1.1 Standard Planar Float-Zone Technology -- 4.1.2 MESA Technology -- 4.2 Basic Principles of Junction Operation -- 4.2.1 Unpolarized p - n Junction -- 4.2.2 Polarized p - n Junction -- 4.2.3 Capacitance -- 4.2.4 Charge Collection Measurements -- 4.2.5 Charge Transport in Silicon Diodes.

4.2.6 Leakage or Reverse Current -- 4.3 Charge Collection Efficiency and Hecht Equation -- 4.4 Junction Characteristics Down to Cryogenic Temperature -- 4.4.1 Diode Structure and Rectification Down to Cryogenic Temperature -- 4.4.1.1 Rectification Property at Room Temperature -- 4.4.1.2 I - V Characteristics Down to Cryogenic Temperature -- 4.4.2 Complex Impedance of Junctions and Cryogenic Temperatures -- 5. Charged Particle Detectors -- 5.1 Spectroscopic Characteristics of Standard Planar Detectors -- 5.1.1 Noise Characterization of Silicon Detectors -- 5.1.2 Energy Resolution of Standard Planar Detectors -- 5.1.3 Energy Resolution and the Fano Factor -- 5.2 Microstrip Detectors -- 5.3 Pixel Detector Device -- 5.3.1 The PILATUS Detecting Device -- 5.3.2 The XPAD Detecting Device -- 5.3.3 The DEPFET Detecting Device -- 5.3.4 The Medipix-Type Detecting Device -- 5.3.4.1 Charge Sharing -- 5.3.4.2 Pattern Recognition -- 5.3.4.3 Mip's -- 5.3.4.4 Protons, α-Particles and Heavier Ions -- 5.3.4.5 Neutrons -- 5.3.5 Timepix -- 6. Photon Detectors and Dosimetric Devices -- 6.1 Photodiodes, Avalanche Photodiodes and Silicon Photomultipliers -- 6.1.1 Photodiodes -- 6.1.1.1 Photodiode and Electrical Model -- 6.1.2 Avalanche Photodiodes -- 6.1.3 Geiger-mode Avalanche Photodiodes and Silicon Photomultiplier Detectors -- 6.1.4 Electrical Characteristics of SiPM Devices as Function of Temperature and Frequency -- 6.1.4.1 Capacitance Response -- 6.1.4.2 Current-Voltage Characteristics -- 6.1.4.3 Electrical Model for SiPMs -- 6.2 Photovoltaic and Solar Cells -- 6.3 Neutron Detection with Silicon Detectors -- 6.3.1 Principles of Neutron Detection with Silicon Detectors -- 6.3.1.1 Signal in Silicon Detectors for Thermal Neutrons -- 6.3.1.2 Signals in Silicon Detectors by Fast Neutrons -- 6.3.2 3-D Neutron Detectors.

7. Examples of Applications of Silicon Devices in Physics and Medical Physics -- 7.1 Silicon Calorimetry -- 7.1.1 Silicon Electromagnetic Calorimeters -- 7.1.2 Luminosity Monitors -- 7.1.3 Silicon Hadronic Calorimeters -- 7.2 Silicon Vertex and Tracker Detectors -- 7.3 Applications in Space and Balloon Experiments -- 7.3.1 Balloon Experiments -- 7.3.1.1 ATIC -- 7.3.1.2 CREAM -- 7.3.1.3 CAPRICE -- 7.3.1.4 TIGRE, MEGA -- 7.3.2 Satellite Experiments -- 7.3.2.1 AGILE -- 7.3.2.2 Fermi-LAT -- 7.3.2.3 NINA -- 7.3.2.4 PAMELA -- 7.3.3 Experiments on Board of the International Space Station -- 7.3.3.1 SilEye Detectors -- 7.3.3.2 The Alpha Magnetic Spectrometer (AMS) -- 7.4 Application of Silicon Devices in Medical Physics -- 7.4.1 Application of Silicon Devices in SPECT and PET -- 7.4.1.1 Single Photon Emission Computed Tomography (SPECT) -- 7.4.1.2 Positron Emission Tomography (PET) -- 7.4.1.3 Example of Silicon Microstrip Detectors Used in Scanners -- 7.4.1.4 Example of Silicon Pad Detectors Used in Scanners -- 7.4.1.5 Example of Silicon Pixel Detectors Used in Scanners -- 7.4.1.6 Example of Silicon Photomultipliers Detectors Used in Scanners -- 7.4.2 X-Ray Medical Imaging -- 7.4.2.1 The Contrast -- 7.4.2.2 The Modulation Transfer Function -- 7.4.2.3 The Detective Quantum Efficiency -- Appendix A General Properties and Physical Constants -- A.1 Physical Constants -- Bibliography -- Index.