Defect reduction study of molecular beam epitaxially grown CdTe thin flims by ex-situ annealing
Bakali, Emine, author.

Defect reduction study of molecular beam epitaxially grown CdTe thin flims by ex-situ annealing

Bakali, Emine, author.

Yazar Ek Girişi
Bakali, Emine, author.

Fiziksel Tanımlama
xiv, 83 leaves: color illustraltions.+ 1 computer laser optical disc.

Molecular Beam Epitaxy (MBE) grown CdTe thin films were annealed in this study to decrease the number density of defects. For annealing, a system was designed and constructed. During anneals; anneal temperature, anneal time, anneal cycle and hydrogen gas effects were analyzed. The effects of annealing parameters were analyzed by Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), Everson Etch method, resonance Raman spectroscopy and Photoluminescence measurement. In our studies, dislocation density decreased for 5 min. annealing when annealing temperature increased. Dislocation density decreased with increasing annealing time. Besides, dislocation density decreased when cycle number increased. Te precipitation decreased with annealing. Raman mode at 144 cm-1 was investigated and that mode was decided as Te E mode. Also I2LO/ILO ratio decreased with increasing annealing temperature and annealing time. I2LO/ILO ratio were approached to 1 at 80oK due to so called ‘resonance Raman scattering’. Extra peaks were also observed by Raman scattering. On the surface, small pits occurred when annealing temperature increased. Surface roughness decreased with increasing cycle number.

Konu Başlığı
Thin films.
Molecular beam epitaxy.
Simulated annealing (Mathematics)
Scanning electron microscopy.
Atomic force microscopy.
Raman spectroscopy.

Yazar Ek Girişi
Selamet, Yusuf

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Physics.

Tek Biçim Eser Adı
Thesis (Master)--İzmir Institute of Technology: Physics.
İzmir Institute of Technology: Physics--Thesis (Master).

Elektronik Erişim
Access to Electronic Versiyon.

LibraryMateryal TürüDemirbaş NumarasıYer Numarası
IYTE LibraryTezT001446QC176.83 .B16 2015