Characterization of vanadium oxide thin films grown by magnetron sputtering technique
tarafından
 
Yüce, Hürriyet, author.

Başlık
Characterization of vanadium oxide thin films grown by magnetron sputtering technique

Yazar
Yüce, Hürriyet, author.

Yazar Ek Girişi
Yüce, Hürriyet, author.

Fiziksel Tanımlama
xii, 64 leaves: color illustraltions.+ 1 computer laser optical disc.

Özet
Vanadium dioxide (VO2) exhibits metal insulator transition (MIT) at around 70 °C. VO2 shows insulator phase at low temperature whereas above the transition temperature VO2 shows metallic phase. The resistivity of this material abruptly changes by a factor of 104 at MIT temperature. There are some factors which induce MIT in VO2 structure such as electric field, the change in temperature or doping. Due to these properties, VO2 is an interesting candidate for exploring potential applications in high speed electronic devices. VO2 plays an important role for field effect transistor (FET) applications. VO2 with its peculiar properties is a good candidate for channel material in FET. Electric field triggered MIT is a desired feature for FET applications. In this work, VO2 thin films have been deposited on c-cut sapphire [Al2O3(0001)] substrate by using DC magnetron sputtering technique. In order to obtain the homogeneous VO2 thin film, the growth process was carried out at various oxygen flow rates with different deposition time. To obtain single VO2 phase, optimum oxygen rate was investigated with various analysis techniques such as Raman, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) and optical-electrical measurements. At the same time, the temperature dependences of optical-electrical properties of these films were analyzed. Then, the metal insulator transition was observed with the change in resistivity by a factor of 104 which is the highest value among grown VO2 films by sputtering technique in the literature. For FET applications, the grown VO2 thin film which indicates the highest change in resistivity at transition temperature was patterned by electron beam lithography in order to create FET channel schema. After electron beam lithography process, the electrical properties of the VO2 strips with various widths were analyzed. The effects of the widths of the VO2 strips on their electrical properties were investigated.

Konu Başlığı
Vanadium oxide.
 
Thin films.
 
Magnetron sputtering.

Yazar Ek Girişi
Özyüzer, Lütfi

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Physics.

Tek Biçim Eser Adı
Thesis (Master)--İzmir Institute of Technology: Physics.
 
İzmir Institute of Technology: Physics--Thesis (Master).

Elektronik Erişim
Access to Electronic Versiyon.


LibraryMateryal TürüDemirbaş NumarasıYer Numarası
IYTE LibraryTezT001448QC176.83 .Y94 2015