Temperature dependence of zero phonon line emission from defects in hexagonal boron nitride and design of photon-pair source
tarafından
 
Polat, Nahit, author.

Başlık
Temperature dependence of zero phonon line emission from defects in hexagonal boron nitride and design of photon-pair source

Yazar
Polat, Nahit, author.

Yazar Ek Girişi
Polat, Nahit, author.

Fiziksel Tanımlama
ix, 49 leaves:+ 1 computer laser optical disc.

Özet
This thesis presents studies of the defect centers in hBN and design of nonlinear waveguide. The multilayer hBN flakes and Si3N4 waveguide are available materials in modern nanophotonics applications. The color centers in hBN are consisted of quantized states because each defect center has different saturation power and dipole polarization. The line shape of emission from defect centers is directly depended photon vibrations and temperature of sample. Moreover, phonon bands in the color centers affect the wavelength of emission and we statistically worked on the phonon effects on ZPL. The Si3N4 waveguide can be more efficient chip scale photon pair sources to create entangled photons in visible band. The zero dispersion wavelength calculations give an efficient waveguide geometry as 650×600 nm2 for 780 nm pump wavelength.

Konu Başlığı
Photons.
 
Phonons.
 
Boron.

Yazar Ek Girişi
Ateş, Serkan,

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Physics.

Tek Biçim Eser Adı
Thesis (Master)--İzmir Institute of Technology: Physics.
 
İzmir Institute of Technology: Physics--Thesis (Master).

Elektronik Erişim
Access to Electronic Versiyon.


LibraryMateryal TürüDemirbaş NumarasıYer Numarası
IYTE LibraryTezT001624QC793.5.P42 P76 2017