Color centers in wide bandgap crystals create discrete energy levels in the bandgap. These discrete energy levels can be used for single photon generation for quantum optics and quantum information applications. In this work, we created optically active defects in multilayer hexagonal boron nitride (hBN) flakes by annealing technique. We produced seven samples at different annealing temperatures (500°C, 750°C and 850°C) and two non-annealed samples for comparison. hBN can host defects emitting at visible wavelengths because of its wide bandgap. We made micro-photoluminescence maps to find point defects in the hBN flakes and then carried out power dependent, polarization dependent and temperature dependent measurements to characterize the emissions. We observed highly localized point-like emitters with a size of about 0.5 m that reach saturation at relatively low excitation powers, show dipole characteristics, have very narrow zero-phonon lines having widths as small as 0.8 meV . These results prove the presence of optically active defects with discrete energy levels.