Molecular beam epitaxial growth of ZnSe on (211)B GaAs
Yavaş, Begüm, author.

Molecular beam epitaxial growth of ZnSe on (211)B GaAs

Yavaş, Begüm, author.

Yazar Ek Girişi
Yavaş, Begüm, author.

Fiziksel Tanımlama
xii, 69 leaves: illustrarions, charts;+ 1 computer laser optical disc.

The Mercury Cadmium Telluride (Hg1-xCdxTe) play important role for infrared (IR) focal plane array application. It is grown on variety alternative substrates which are Si, Ge, GaAs or GaSb. When GaAs is compared with the others alternative substrate, it is more preferable due to having good surface polarity and also easily commercially available of high quality. When HgCdTe epilayer is grown directly on the GaAs substrate, there exist some dislocations in the epilayer due to large lattice mismatch between HgCdTe and GaAs substrate.The CdTe semiconductor is grown like a buffer layer to reduce dislocation in the HgCdTe epilayer grown on GaAs or other alternative substrate [1].The crystal quality of CdTe buffer layer directly affected HgCdTe epilayer. Therefore, CdTe needed to be low defect density.Because of %14.6 lattice mismatch between CdTe and GaAs [2], some defects are observed in CdTe buffer layer. ZnSe epilayer can be used to decrease lattice mismatch between CdTe and alternative substrate. When ZnSe interlayers are grown with high quality, CdTe affects positively. The aim of this theses is the growth of ZnSe epilayer films on (211) GaAs substrates by molecular beam epitaxy (MBE). The effect of growth temperature, VI/II flux ratio and deoxidation process with In and As were studied in this study. Crystal qualities of films were investigated by using X-ray diffraction. The surface morphology of ZnSe films were analyzed by atomic force microscopy and Nomarski microscopy. Vibrational phonon modes, thermal and elastic strains of ZnSe epilayer were observed by using Raman spectroscopy [3].

Konu Başlığı
Molecular beam epitaxy.
Zinc selenide.
X-rays -- Diffraction.
Atomic force microscopy.
Semiconductor-metal boundaries.
Raman spectroscopy.

Yazar Ek Girişi
Ateş, Serkan,

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Material Science and Engineering.

Tek Biçim Eser Adı
Thesis (Master)--İzmir Institute of Technology: Material Science and Engineering.
İzmir Institute of Technology: Material Science and Engineering--Thesis (Master).

Elektronik Erişim
Access to Electronic Versiyon.

LibraryMateryal TürüDemirbaş NumarasıYer NumarasıDurumu/İade Tarihi
IYTE LibraryTezT001640QC611.6.M64 Y35 2017Tez Koleksiyonu