Characterization of GaAs (211) surface for epitaxial buffer growth
Polat, Mustafa, author.

Characterization of GaAs (211) surface for epitaxial buffer growth

Polat, Mustafa, author.

Yazar Ek Girişi
Polat, Mustafa, author.

Fiziksel Tanımlama
xx, 112 leaves:+ 1 computer laser optical disc.

GaAs (211)B wafer can be used for the growth of CdTe buffer layer by MBE after thermal desorption of oxide presents on its surface. Then, CdTe buffered GaAs (211)B called as composite substrate can be used as a template for the growth of HgCdTe. Thermal desorption can be detrimental to surface in some cases if the structure and constituents of this oxide are not fully understood. In this thesis, HF:H2O and H2SO4:H2O2:H2O chemical treatments were applied to epiready GaAs (211)B samples for the determination of suitability of their usage for CdTe buffer layer growth. Effects of these wet chemical etching processes on the surface of samples are characterized and determined by various kinds of characterization techniques including XRD, XPS, SEM, EDX, AFM, and optical microscope. We also analyzed samples cut from 3" epiready GaAs (211)B wafers to determine their oxide structures, surface roughnesses, crystal qualities, and surface morphologies. Crystal quality of as-received samples measured by RC were about 18-21 arcsec. Amounts of arsenic and gallium oxides were decreased after HF treatment according to XPS results. Gallium rich surface was obtained for samples treated with piranha solution. Surface roughnesses of samples increased after piranha treatment. However, it was determined that others treated with HF had smaller surface roughnesses than asreceived samples.

Konu Başlığı
Gallium arsenide semiconductors -- Testing

Yazar Ek Girişi
Selamet, Yusuf

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Physics.

Tek Biçim Eser Adı
Thesis (Master)--İzmir Institute of Technology: Physics.
İzmir Institute of Technology: Physics--Thesis (Master).

Elektronik Erişim
Access to Electronic Versiyon.

LibraryMateryal TürüDemirbaş NumarasıYer NumarasıDurumu/İade Tarihi
IYTE LibraryTezT001243TK7871.15.G3 P65 2014Tez Koleksiyonu