Optimization of zinc oxide based metal-semiconductor junction interface properties and applications for optoelectronic devices
tarafından
 
Güzelaydın, Abdurrahman Halis, author.

Başlık
Optimization of zinc oxide based metal-semiconductor junction interface properties and applications for optoelectronic devices

Yazar
Güzelaydın, Abdurrahman Halis, author.

Yazar Ek Girişi
Güzelaydın, Abdurrahman Halis, author.

Fiziksel Tanımlama
xii, 78 leaves: illustrarions, charts; 29 cm + 1 computer laser optical disc.

Özet
This thesis manifests an experimental investigation on the optoelectronic characteristics of wide band gap thin film zinc oxide semiconductor – metal junction and performance enhancement of ultraviolet photo detectors fabricated utilizing this metal-semiconductor interface. Pristine zinc oxide, aluminum doped zinc oxide and amorphous In-Ga-Zn-O thin film samples with thicknesses varying between 50-250 nm were fabricated from 2” ceramic targets via magnetron sputtering method. Surface properties and thus the zinc oxide – metal junction interface was optimized by altering sputtering parameters. Sputtering gas pressure, power and temperature was varied between 1.5 – 5 mTorr, 50 – 120 W and 25 – 500 °C, respectively. To determine the effects of energetic ion bombardment on the films’ surface properties, biases ranging from 5 to 15 W were applied to the substrates during depositions. A 5 nm thick silicon dioxide passivation layer was deposited on zinc oxide thin films to suppress persistent photoconductivity effect. Furthermore, a thermal treatment under ultraviolet irradiation and was applied specifically to amorphous In-Ga-Zn-O thin films after device fabrication to improve their ultraviolet sensing capabilities. Optoelectronic spectral responses of devices were assessed experimentally by using transient photocurrent spectroscopy method. An ultraviolet light source with a 275 nm peak wavelength at 500 µW power was used as illumination source. All devices exhibited photoconductor behavior with ohmic metal-semiconductor junctions under 5 V bias. Amorphous In-Ga-Zn-O Sample 10 attained a dark current of 140 nA and reached a photocurrent level of 3.8 µA with a photo-to-dark current ratio of 27, yielding a spectral response of 1830 A/W. The calculated external quantum efficiency for this device was 825000%

Konu Başlığı
Amorphous semiconductors
 
Semiconductors
 
Optoelectronic devices
 
Semiconductor films

Yazar Ek Girişi
Tarhan, Enver,
 
Demir, Mustafa Muammer,

Tüzel Kişi Ek Girişi
İzmir Institute of Technology. Materials Science and Engineering.

Tek Biçim Eser Adı
Thesis (Doctoral)-- İzmir Institute of Technology: Materials Science and Engineering
 
İzmir Institute of Technology: Materials Science and Engineering. (Doctoral).

Elektronik Erişim
Access to Electronic Versiyon.


LibraryMateryal TürüDemirbaş NumarasıYer NumarasıDurumu/İade Tarihi
IYTE LibraryTezT002941QC611.8.A5 G99 2024Tez Koleksiyonu