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Özkendir, Dilce, author.
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Self-organized network of silicon oxide on epitaxial graphene / Özkendir, Dilce, author.
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Tepeli, Dilek, author.
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Calcium, silicon, aluminum, iron oxide-containing raw materials are used in controlled portions to
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Soylu, Gizem, author.
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native oxide, silicon-on-insulator (SOI), pure glass and glass with TiO2 thin film samples were used to
by
Horzum, Utku, author.
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) nanodots with micrometer scale spacings on a K-casein background (single active) on indium tin oxide (ITO
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Örer, Sabiha.
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. Specifically, the 2-D elemental distribution of Ge ions on silicon oxide surfaces, prepared by the method of
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İnanç, Dilce, author.
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sensitivity was determined through electrical measurements, as the oxide layer becomes thinner due to the
by
Aras, Nadir, author.
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compositions; uncoated (crystalline silicon, c-Si), oxide-coated silicon, SiO2, and nitride coated silicon, Si3
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İçin, Öykü, author.
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of titanium oxide precursor solution (Titanium(IV) n-butoxide (TBT)) and calcined at 450 °C for 4 h
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Alaboz, Hakan, author.
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sputtered on high resistivity silicon wafers and doped with Au, provided the bolometer to operate in THz
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Özben, Eylem Durğun
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metal gate and Reference sample-2 has Ta2O5 oxide layer with unnitrided silicon surface. It has been
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Özdağ, Pınar.
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quality of oxide layer and oxide-silicon interface. The theoretical ideal capacitance-voltage calculations
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Çizer, Özlem
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contents of amorphous materials, silicon dioxide and aluminium oxide in their compositions. Either of
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