12 sonuç bulundu
Select All
000000000000DEFAULT_TR
by
Özkendir, Dilce, author.
Format:
El Yazması
Alıntı:
Self-organized network of silicon oxide on epitaxial graphene / Özkendir, Dilce, author.
by
Tepeli, Dilek, author.
Format:
El Yazması
Alıntı:
Calcium, silicon, aluminum, iron oxide-containing raw materials are used in controlled portions to
View Other Search Results
by
Soylu, Gizem, author.
Format:
El Yazması
Alıntı:
native oxide, silicon-on-insulator (SOI), pure glass and glass with TiO2 thin film samples were used to
by
Horzum, Utku, author.
Format:
El Yazması
Alıntı:
) nanodots with micrometer scale spacings on a K-casein background (single active) on indium tin oxide (ITO
by
Örer, Sabiha.
Format:
El Yazması
Alıntı:
. Specifically, the 2-D elemental distribution of Ge ions on silicon oxide surfaces, prepared by the method of
by
İnanç, Dilce, author.
Format:
El Yazması
Alıntı:
sensitivity was determined through electrical measurements, as the oxide layer becomes thinner due to the
by
Aras, Nadir, author.
Format:
El Yazması
Alıntı:
compositions; uncoated (crystalline silicon, c-Si), oxide-coated silicon, SiO2, and nitride coated silicon, Si3
by
İçin, Öykü, author.
Format:
El Yazması
Alıntı:
of titanium oxide precursor solution (Titanium(IV) n-butoxide (TBT)) and calcined at 450 °C for 4 h
by
Alaboz, Hakan, author.
Format:
El Yazması
Alıntı:
sputtered on high resistivity silicon wafers and doped with Au, provided the bolometer to operate in THz
by
Özben, Eylem Durğun
Format:
El Yazması
Alıntı:
metal gate and Reference sample-2 has Ta2O5 oxide layer with unnitrided silicon surface. It has been
by
Özdağ, Pınar.
Format:
El Yazması
Alıntı:
quality of oxide layer and oxide-silicon interface. The theoretical ideal capacitance-voltage calculations
by
Çizer, Özlem
Format:
El Yazması
Alıntı:
contents of amorphous materials, silicon dioxide and aluminium oxide in their compositions. Either of
12 sonuç bulundu
Arama Sonuçlarını Sınırlandır