Synthesis and nitrogen doping of graphene by chemical vapor deposition için kapak resmi
Synthesis and nitrogen doping of graphene by chemical vapor deposition
Synthesis and nitrogen doping of graphene by chemical vapor deposition
Yanılmaz, Alper, author.
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Fiziksel Tanımlama:
xiii, 76 leaves: color illustraltions.+ 1 computer laser optical disc.
Controllable carrier transport due to charged impurities in the graphene lattice is still lacking. Doping of graphene by foreign atoms leads to modify its band structure and electro chemical properties. Among numerous potential dopants, nitrogen (N2) is considered to be an excellent candidate to form strong valence bonds with carbon atoms, which would provide n or p-doping according to bonding character of charged-impurity atom. Exposure of graphene lattice to nitrogen gas leads to a change in the carrier concentration and opens a bandgap due to symmetry breaking. Furthermore, this seems to be an effective way to customize the properties of graphene and exploit its potential for various applications. This thesis focuses on the growth of graphene by low pressure chemical vapor deposition (LPCVD) and doping it with N2 by using N2 plasma treatment. Here, copper foil was used as the catalytic substrate to grow large area graphene at LPCVD system. The grown graphene was transferred onto SiO2, Au (111) and Sapphire substrates. The effect of different plasma time and power on doping process was investigated while keeping the N2 flow rates constant by using N2 plasma. The nitrogen doped graphene (N-graphene) was characterized via Raman Spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy/spectroscopy (STM/STS), Kelvin probe force microscopy (KPFM). Raman mapping of N-graphene was also conducted to show the homogeneity of N2 incorporation into graphitic lattice. STM results were theoretically modelled by using density functional theory (DFT). Our results provide the opportunity to produce N-graphene with homogenous and effective doping which would be valuable in electronic and optoelectronic applications.
Yazar Ek Girişi:
Tek Biçim Eser Adı:
Thesis (Master)--İzmir Institute of Technology: Materials Science and Engineering.

İzmir Institute of Technology: Materials Science and Engineering--Thesis (Master).
Elektronik Erişim:
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