Magnetron sputter grown metal doped vanadium oxide thin films for terahertz bolometers için kapak resmi
Magnetron sputter grown metal doped vanadium oxide thin films for terahertz bolometers
Magnetron sputter grown metal doped vanadium oxide thin films for terahertz bolometers
Alaboz, Hakan, author.
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Fiziksel Tanımlama:
xi, 77 leaves: color illustrarions, charts;+ 1 computer laser optical disc.
Terahertz (THz) studies and hence technological improvements have increased and that caused expansion of application of THz waves. Applications of THz region have been expanded in many areas such as security, medical imaging, detection of explosives, nondestructive tests and wireless communication recently. THz radiation passes through many plastic materials, clothing but it reflects from metals and it is used in the detection of a lot of well known explosive materials. In spite of mentioned advantages and a wide range of application area, constructing a detector which is low cost, compact and uncooled is difficult and this causes the industry to improve slowly. Now, detectors which are widely used in THz region are pyroelectric, Schottky barrier diodes, field effect transistors and they have disadvantages such as low sensitivity, hard to construct an array and low speed. Instead of these detectors, superconducting bolometers are presented but they require liquid helium cooling. It is thought that VOx will be a premium technology for THz region due to its success in the infrared region. In this thesis, VOx:Au thin films were produced by DC magnetron sputtering and properties of these films were optimized for uncooled bolometer that operates at THz region. Polycrystalline VOx:Au thin films which have -1.7 % K-1 temperature coefficient resistance (TCR) and 0.07 Ωcm resistivity values were obtained. Increasing TCR values mostly depend on sputtering parameters such as gas and Au dope rates. These parameters were changed until the best TCR value was achieved and with Au doping, high resistance values of the films decreased to acceptable levels hence it decreased Johnson noise of the bolometer. Originally, these thin films which were sputtered on high resistivity silicon wafers and doped with Au, provided the bolometer to operate in THz region efficiently. The antenna design on the device was made by CST Microwave Studio, the antenna resonance was arranged to 0.6 THz which is related to our THz source operating frequency. Keywords: THz, Uncooled bolometer, Vanadium oxide
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Tek Biçim Eser Adı:
Thesis (Doctoral)--İzmir Institute of Technology: Materials Science and Engineering.

İzmir Institute of Technology: Materials Science and Engineering--Thesis (Doctoral).
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