CONTENTS -- Preface -- Organizing Committee -- Conference Program -- Vertical Scaling of Type I InP HBT with FT > 500 GHz J. W. Lai, W. Hafez and M. Feng -- 1 Introduction -- 2 Device Fabrication -- 3 Measurement Results -- 4 Device Analysis -- 5 Conclusion -- Acknowledgement -- References -- Numerical Investigation of the Effect of Doping Profiles on the High Frequency Performance of InP/InGaAs Super Scaled HBTs D. Veksler, M. S. Shur, V. E. Houtsma, N. G. We.ima.nn and Y. K. Chen -- Introduction -- Simulations -- Analytical ft and fmax model -- Base doping profile -- Collector doping -- Emitter optimization -- Conclusions -- References -- Tunnel Diode/Transistor Differential Comparator Q. Liu, S. Sutar and A. Seabaugh -- 1. Introduction -- 2. Circuits Design -- 3. Direct Digital Synthesis -- 4. Fabrication Approach -- 5. Conclusions -- Acknowledgments -- References -- Benchmark Results for High-Speed 4-Bit Accumulators Implemented in Indium Phosphide DHBT Technology S. E. Turner and D. E. Kotecki -- 1. Introduction -- 2. Accumulator Architecture -- 3. Accumulator with Modified Carry Circuit -- 4. Accumulator with Modified Carry and Sum Circuits -- 5. Conclusion -- Acknowledgments -- References -- Atomically Flat III-Antimonide Epilayers Grown Using Liquid Phase Epitaxy A. Kumar, S. Sridaran and P. S. Dutta -- 1 Introduction -- 2 Experimental details -- 3 Results and Discussions -- 3.1 2-Dimensional Epilayer Growth using Ramp-cooling -- 3.2 Isothermal growth with initial supercooling -- 4 Conclusion -- Acknowledgments -- References -- Native Defect Compensation in III-Antimonide Bulk Substrates R. Pino, Y. Ko and P. S. Dutta -- 1. Introduction -- 2. Experimental Details -- 3. Results and Discussion -- 4. Conclusions -- Acknowledgments -- References.

Noise and THz Rectification Characteristics of Zero-Bias Quantum Tunneling Sb-Heterostructure Diodes A. Luukanen, E. N. Grossman, H. P. Moyer and J. N. Schulman -- 1. Introduction -- 2. Diode IV measurements -- 3. Noise measurements -- 4. THz measurements -- 5. Conclusions -- Acknowledgments -- References -- Temperature Dependence of Terahertz Emission from Silicon Devices Doped with Boron R. T. Troeger, T. N. Adam, S. K. Ray, P.-C. Lv, S. Kim and J. Kolodzey -- 1 Introduction -- 2 Device Fabrication -- 3 Electroluminescence Measurements -- 4 Results and Discussion -- 5 Conclusions -- Acknowledgements -- References -- Two-Dimensional Analytical Modeling and Simulation of Retrograde Doped HMG MOSFET R. S. Gupta, K. Gael, M. Saxena and M. Gupta -- 1 Introduction -- 1.1. Model Formulation -- 1.2. Result and Discussion -- 1.3. Conclusions -- Acknowledgments -- References -- Electrical Effects of DNA Molecules on Silicon Field Effect Transistor G. Xuan, J. Kolodzey, V. Kapoor and G. Gonye -- 1 Introduction -- 2 Experimental -- 3 Discussion -- 4 Summary -- Acknowledgements -- References -- Analysis of Operational Transconductance Amplifier for Application in GHz Frequency Range A. Ghori and P. Ghosh -- 1 Introduction -- 2 SOI vs Bulk OTA Performance -- 2.1 Frequency Behavior -- 2.2 Sinusoidal Property -- 2.3 Switching Characteristics and Power Dissipation -- 2.4 Effects of Transistor Channel length -- 3 Band Pass Filter -- 4 Conclusion -- References -- Lifetime of Nonequilibrium Carriers in AlGaN Epilayers with High Al Molar Fraction J. Mickevicius, R. Aleksiejunas, M. S. Shur, J. P. Zhang, Q. Fareed, R. Gaska and G. Tamulaitis -- 1 Introduction -- 2 Experiment -- 3 Results and discussion -- 4 Conclusions -- Acknowledgments -- References.

Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Y. Bilenko, R. Gaska, P. V. Kosterin and B. M. Salzberg -- 1 Introduction -- 2 Experimental Details -- 3 Results and Discussion -- 4 Conclusions -- References -- Junction-Temperature Measurements in GaN UV Light-Emitting Diodes using the Diode Forward Voltage Y. Xi and E. F. Schubert -- Acknowledgments -- References -- High Speed 0.9 m Lateral P-I-N Photodetectors Fabricated in a Standard Commercial GaAs VLSI Process W. P. Giziewicz, C. G. Fonstad Jr. and S. Prasad -- 1. Introduction -- 2. Lateral Diode Structure -- 3. DC Characteristics -- 3.1. I- V Behaviour -- 3.2. Capacitance -- 3.3. DC Sensitivity -- 4. Transient Characteristics -- 4.1. AC Source -- 4.2. Pulse Response -- 5. Conclusion -- Acknowledgements -- References -- Self-Guiding in Low-Index-Contrast Planar Photonic Crystals C. Chen, Z. Lu, S. Shi and D. W. Prather -- 1 Introduction -- 2 Self-Collimation in Low-Index-Contrast Planar Photonic Crystals -- 3 Self-Guiding in Low-Index-Contrast Planar Photonic Crystal -- References -- Omni-Directional Reflector using a Low Refractive Index Material J.-Q. Xi, M. Ojha, W. Cho, Th. Gessmann, E. F. Schubert, J. L. Plawsky and W. N. Gill -- Introduction -- Triple-layer ODRs -- Hybrid ODRs -- References -- MBE-Grown AlGaN/GaN HEMTs on SiC S. Rajan, A. Chakraborty, U. K. Mishra, C. Poblenz, P. Waltereit and J. S. Speck -- 1. Introduction -- 2. Carbon-doped buffers -- 3. Undoped Buffers -- 4. Conclusion -- Acknowledgments -- References -- Stable High Power GaN-on-GaN HEMT K. K. Chu, P. C. Chao and J. A. Windyka -- 1 Introduction -- 2 Device Fabrication -- 3 Electrical Performance -- 4 Device Reliability -- 5 Conclusions -- Acknowledgments -- References.

Thick GaN Layer Grown by Ga Vapor Transport Technique H. Wu, P. Konkapaka, Y. Makarov and M. G. Spencer -- 1 Introduction -- 2 Experimental Procedures -- 3 Results and Discussions -- 4 Conclusion -- Acknowledgements -- References -- Dependence of RF Performance of GaN/AlGaN HEMTs upon AlGaN Barrier Layer Variation E. Faraclas, R. T. Webster, G. Brandes and A. F. M. Anwar -- 1 Introduction -- 2 Model -- 3 Results and Discussion -- 4 Dependence upon Contributions of Polarization -- 5 Dependence on Temperature Variation -- 6 Measurement -- 7 Conclusions -- Acknowledgement -- References -- Selective Dry Etching of GaN over AlGaN in BC13/SF6 Mixtures D. Buttari, A. Chini, A. Chakraborty, L. McCarthy, H. Xing, T. Palacios, L. Shen, S. Keller and U. K. Mishra -- 1 Introduction -- 2 Experimental -- 3 Results and discussion -- Acknowledgments -- References -- Low Frequency Noise Parameters in an AlGaN/GaN Heterostructure with 33% and 75% Al Mole Fraction S. A. Vitusevich, S. V. Danylyuk, N. Klein, M. V. Petrychuk, A. E. Belyaev, A. Vertiatchikh and L. F. Eastman -- 1 Introduction -- 2 Experimental details -- 3 Experimental results and discussion -- 4 Conclusion -- Acknowledgements -- References -- Trap Behavior in AlGaN/GaN HEMTs by Post-Gate-Annealing H. Kim, J. Lee and W. Lu -- 1 Introduction -- 2 Device Fabrication and Pulsed Measurement Methods -- 3 Results and Discussion -- 4 Conclusions -- Acknowledgements -- References -- Photocapacitance of GaAs Thin-Film Structures Fabricated on a Semi-Insulating Compensated Substrate N. B. Gorev, I. F. Kodzhespirova, E. N. Privalov, N. Khuchua, L. Khvedelidze and M. S. Shur -- 1 Introduction -- 2 Calculation of the Barrier Capacitance and Photocapacitance of Thin-Film Structures -- 3 Results and discussion -- 4 Conclusions -- References.

Unstrained InAlN/GaN HEMT Structure M. Neuburger, T. Zimmermann, E. Kohn, A. Dadgar, F. Schulze, A. Krtschil, M. Giinther, H. Witte, J. Biasing, A. Krost, I. Daumiller and M. Kunze -- 1 Introduction -- 2 Growth and Processing -- 3 Experimental results -- 4 Conclusion -- References -- GaN MOS-HEMT Using Atomic Layer Deposition Al2O3 as Gate Dielectric and Surface Passivation P. D. Ye, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Haider and J. C. M. Hwang -- 1 Introduction -- 2 Device Fabrication -- 3 Device Characterization -- 4 Summary -- References -- Dependence of Electron Mobility on EPI Channel Doping in GaN MOSFETs J. Ruan, K. Matocha, W. Huang and T. P. Chow -- 1 INTRODUCTION -- 2 DEVICE STRUCTURE -- 3 DEVICE CHARACTERIZATION AND ANALYSIS -- 3.1 Field-Effect Mobility -- 3.2 Hall Mobility -- Summary -- Acknowledgment -- References -- Fabrication of Self-Aligned T-Gate AlGaN/GaN High Electron Mobility Transistors J. Lee, D. Liu, H. Kim, M. L. Schuette, W. Lu, J. S. Flynn and G. R. Brandes -- 1 Introduction -- 2 Fabrication -- 3 Results and Discussion -- 4 Conclusions -- Acknowledgements -- References -- A New Field-Plated GaN HEMT Structure with Improved Power and Noise Performance H. Xu, C. Sanabria, A. Chini, Y. Wei, S. Heikman, S. Keller, U. K. Mishra and R. A. York -- 1 Introduction -- 2 Device Structures and Fabrication -- 3 DC and S-parameter Characterization -- 4 Power Characterization -- 5 Noise Characterization -- 6 Summary -- Acknowledgments -- Reference -- Noise Characteristics of Field-Plated GaN HEMTs 192 Y.-F. Wu, M. Moore, T. Wisleder, P. M. Chavarkar, P. Parikh and A. Saxler -- 1 Introduction -- 2 Device Fabrication and Characteristics -- 3 Noise Performance and Discussion -- 4 Conclusion -- Temperature Dependent I-V Characteristics of AlGaN/GaN HBTs and GaN BJTs H. G. Xing and U. K. Mishra -- 1 Introduction -- 2 Experiments.

3 Results and discussions.