Title Page -- Contents -- Introduction -- Chapter 1. Active Dopant Profiling in the TEM by Off-Axis Electron Holography -- 1.1. Introduction -- 1.2. The Basics: from electron waves to phase images -- 1.2.1. Electron holography for the measurement of electromagnetic fields -- 1.2.2. The electron source -- 1.2.3. Forming electron holograms using an electron biprism -- 1.2.4. Care of the electron biprism -- 1.2.5. Recording electron holograms -- 1.2.6. Hologram reconstruction -- 1.2.7. Phase Jumps -- 1.3. Experimental electron holography -- 1.3.1. Fringe contrast, sampling and phase sensitivity -- 1.3.2. Optimizing the beam settings for an electron holography experiment -- 1.3.3. Optimizing the field of view using free lens control -- 1.3.4. Energy filtering for electron holography -- 1.3.5. Minimizing diffraction contrast -- 1.3.6. Measurement of the specimen thickness -- 1.3.7. Specimen preparation -- 1.3.8. The electrically inactive thickness -- 1.4. Conclusion -- 1.5. Bibliography -- Chapter 2. Dopant Distribution Quantitative Analysis Using STEM-EELS/EDX Spectroscopy Techniques -- 2.1. Introduction -- 2.1.1. Dopant analysis challenges in the silicon industry -- 2.1.2. The different dopant quantification and imaging methods -- 2.2. STEM-EELS-EDX experimental challenges for quantitative dopant distribution analysis -- 2.2.1. Instrumentation present state-of-the-art and future challenges -- 2.3. Experimental conditions for STEM spectroscopy impurity detection -- 2.3.1. Radiation damages -- 2.3.2. Particularities of EELS and EDX spectroscopy techniques -- 2.3.3. Equipments used for the STEM-EELS-EDX analyses presented in this chapter -- 2.4. STEM EELS-EDX quantification of dopant distribution application examples -- 2.4.1. EELS application analysis examples -- 2.4.2. EDX application analysis examples.

2.5. Discussion on the characteristics of STEM-EELS/EDX and data processing -- 2.6. Bibliography -- Chapter 3. Quantitative Strain Measurement in Advanced Devices: A Comparison Between Convergent Beam Electron Diffraction and Nanobeam Diffraction -- 3.1. Introduction -- 3.2 Electron diffraction technique in TEM (CBED and NBD) -- 3.2.1. CBED patterns acquisition and analysis -- 3.2.2. NBD patterns acquisition and analysis -- 3.3. Experimental details -- 3.3.1. Instrumentation and setup -- 3.3.2. Samples description -- 3.4. Results and discussion -- 3.4.1. Strain evaluation in a pMOS transistor integrating eSiGe source and drain - a comparison of CBED and NBD techniques -- 3.4.2. Quantitative strain measurement in advanced devices by NBD -- 3.5. Conclusion -- 3.6. Bibliography -- Chapter 4. Dark-Field Electron Holography for Strain Mapping -- 4.1. Introduction -- 4.2. Setup for dark-field electron holography -- 4.3. Experimental requirements -- 4.4. Strained silicon transistors with recessed sources and drains stressors -- 4.4.1. Strained silicon p-MOSFET -- 4.5. Thin film effect -- 4.6. Silicon implanted with hydrogen -- 4.7. Strained silicon n-MOSFET -- 4.8. Understanding strain engineering -- 4.9. Strained silicon devices relying on stressor layers -- 4.10. 28-nm technology node MOSFETs -- 4.11. FinFET device -- 4.12. Conclusions -- 4.13. Bibliography -- Chapter 5. Magnetic Mapping Using Electron Holography -- 5.1. Introduction -- 5.2. Experimental -- 5.2.1. The Lorentz mode -- 5.2.2 The "φE" problem -- 5.3. Hologram analysis: from the phase images to the magnetic properties -- 5.3.1. The simplest case: homogeneous specimen of constant thickness -- 5.3.2. The general case -- 5.4. Resolutions -- 5.4.1. Magnetic measurements accuracy -- 5.4.2. Spatial resolution.

5.5. One example: FePd (L10) epitaxial thin film exhibiting a perpendicular magnetic anisotropy (PMA) -- 5.6. Prospective and new developments -- 5.6.1. Enhanced signal and resolution -- 5.6.2. In-situ switching -- 5.7. Conclusions -- 5.8. Bibliography -- Chapter 6. Interdiffusion and Chemical Reaction at Interfaces by TEM/EELS -- 6.1. Introduction -- 6.2. Importance of interfaces in MOSFETs -- 6.3. TEM and EELS -- 6.4. TEM/EELS and study of interdiffusion/chemical reaction at interfaces in microelectronics -- 6.4.1. Thickness measurement -- 6.4.2. Atomic structure analysis -- 6.4.3. EELS analysis -- 6.4.4. Sample preparation -- 6.5. HRTEM/EELS as a support to developments of REand TM-based HK thin films on Si and Ge -- 6.5.1. Introduction -- 6.5.2. HRTEM/EELS methodology -- 6.5.3. Illustrations -- 6.6. Conclusion -- 6.7. Bibliography -- Chapter 7. Characterization of Process-Induced Defects -- 7.1. Interfacial dislocations -- 7.1.1. Si(100)/Si(100) direct wafer bonding (DWB) -- 7.1.2. SiGe heterostructures -- 7.2. Ion implantation induced defects -- 7.2.1. Defects of interstitial type -- 7.2.2. Defects of vacancy type -- 7.3. Conclusions -- 7.4. Bibliography -- Chapter 8. In Situ Characterization Methods in Transmission Electron Microscopy -- 8.1. Introduction -- 8.2. In situ in a TEM -- 8.2.1. Temperature control and irradiation -- 8.2.2. Electromagnetic field -- 8.2.3. Mechanical -- 8.2.4. Chemistry -- 8.2.5. Light -- 8.2.6. Multiple and movable currents -- 8.3. Biasing in a conventional TEM -- 8.3.1. Multiple contacts -- 8.3.2. Movable contacts -- 8.3.3. Comparison -- 8.4. Sample design -- 8.4.1. Focused ion beam -- 8.4.2. TEM windows -- 8.5. Conclusions -- 8.6. Bibliography -- Chapter 9. Specimen Preparation for Semiconductor Analysis -- 9.1. The focused ion beam tool -- 9.2. Ion-sample interaction.

9.3. Beam currents and energies for specimen preparation -- 9.4. Practical specimen preparation -- 9.5. In situ lift-out -- 9.6. H-bar technique -- 9.7. Broad beam ion milling -- 9.8. Mechanical wedge polishing -- 9.9. Conclusion -- 9.10. Bibliography -- List of Authors -- Index.