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Bakali, Emine, author.
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method, resonance Raman spectroscopy and Photoluminescence measurement. In our studies, dislocation
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Günnar, Merve, author.
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GaAs wafers by molecular beam epitaxy (MBE) were characterized by ex-situ spectroscopic ellipsometry
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Bilgilisoy, Elif, author.
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layers. CdTe epilayers which were grown on (211)B GaAs by molecular beam epitaxy (MBE) were subjected to
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