Developing graphene-organic hybrid electrodes for silicon based Schottky devices için kapak resmi
Developing graphene-organic hybrid electrodes for silicon based Schottky devices
Başlık:
Developing graphene-organic hybrid electrodes for silicon based Schottky devices
Yazar:
Aydın, Hasan, author.
Yazar Ek Girişi:
Fiziksel Tanımlama:
xiv, 92 leaves: color illustrarions, charts;+ 1 computer laser optical disc
Özet:
This thesis focused on developing graphene-organic hybrid electrodes for silicon based Schottky devices. Two different sets of carboxylic acid based SAMs were used to improve the rectification character of the Schottky junction formed at graphene/Si interface. While the first set of SAMs consists of MePIFA and DPIFA, the second set of SAMs contains TPA and CAR. In addition to this, P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was utilized to form P3HT-graphene bilayer electrode. Current-voltage characteristics of bare and SAMs modified devices showed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. The DPIFA SAMs device exhibited better diode performance compare to MePIFA SAMs due to the absence of methyl group which hinders π-π interaction between SAMs molecule and graphene. Furthermore, the CAR-based device indicates better diode characteristic with respect to the TPA-based device due to smaller energy differences between graphene and CAR. The effect of P3HT-graphene bilayer electrode on the photoresponsivity characteristics of Silicon based Schottky photodetectors have been also investigated. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent measurements exhibited excellent durability and fast response speed. Moreover, the maximum photoresponsivity of P3HT-graphene/Si photodetector increased compared to that of bare graphene/Si photodetector. The observed increment in the photoresponsivity of P3HT-graphene/Si devices was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Finally, P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors.
Yazar Ek Girişi:
Tek Biçim Eser Adı:
Thesis (Doctoral)--İzmir Institute of Technology: Materials Science and Engineering.

İzmir Institute of Technology: Materials Science and Engineering--Thesis (Doctoral).
Elektronik Erişim:
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