The impact of adsorbates on the optoelectronic properties of graphene/silicon based schottky barrier photodiodes için kapak resmi
The impact of adsorbates on the optoelectronic properties of graphene/silicon based schottky barrier photodiodes
Başlık:
The impact of adsorbates on the optoelectronic properties of graphene/silicon based schottky barrier photodiodes
Yazar:
Şahan, Nusret, author.
Yazar Ek Girişi:
Fiziksel Tanımlama:
xvi, 61 leaves: color illustraltions, charts;+ 1 computer laser optical disc.
Özet:
The aim of this study is to investigate the effect of atmospheric adsorbates on the electronic and optoelectronic properties of graphene/n-type Silicon (Gr/n-Si) based Schottky barrier photodiodes. Wavelength resolved photocurrent spectroscopy and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the adsorbates cause hole doping in graphene and hence increase the zero-bias Schottky barrier height of the Gr/n-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-excited charge carriers at the depletion region of the heterojunction and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 A W^-1) and response speed of the Gr/n-Si photodiode in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate induced variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.
Yazar Ek Girişi:
Tek Biçim Eser Adı:
Thesis (Master)--İzmir Institute of Technology:Physics.

İzmir Institute of Technology: Physics --Thesis (Master).
Elektronik Erişim:
Access to Electronic Versiyon.
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